本文選題：憶阻器 + 電路模型　； 參考：《華南理工大學(xué)》2014年碩士論文

【摘要】：憶阻器是華裔科學(xué)家蔡少棠于1971年提出的一種無(wú)源器件，它是電路中除電阻、電容、電感的第四種基本元件，它反映了電路中磁通量φ和電荷量q的關(guān)系。2008年惠普實(shí)驗(yàn)室成功用TiO2薄膜制作出憶阻器，驗(yàn)證了憶阻器的真實(shí)存在，使得憶阻器的原理與應(yīng)用成為國(guó)際電路學(xué)研究的熱點(diǎn)和前沿問(wèn)題之一。但由于TiO2薄膜憶阻器為納米級(jí)器件，不能用直接在電力電子電路中，為便于對(duì)憶阻器進(jìn)行在電力電子領(lǐng)域內(nèi)的應(yīng)用研究，需要建立憶阻器的電路模型以滿足實(shí)驗(yàn)要求，并以此為基礎(chǔ)進(jìn)一步探討憶阻器在電力電子電路中的應(yīng)用可能性。 本文通過(guò)分析憶阻器的電氣特性和現(xiàn)有的電路模型優(yōu)缺點(diǎn)，提出了一種憶阻器電路模型搭建方法，并通過(guò)實(shí)驗(yàn)驗(yàn)證了模型的有效性，然后提出了憶阻器應(yīng)用于緩沖電路的設(shè)想，再應(yīng)用新提出的憶阻器模型對(duì)該設(shè)想進(jìn)行了驗(yàn)證。 本文所做的工作包括以下幾方面： 1.研究了憶阻器的定義和惠普公司憶阻器的特性，對(duì)現(xiàn)有的憶阻器的電路模型進(jìn)行了討論，基于現(xiàn)有模型結(jié)構(gòu)復(fù)雜、參數(shù)整定繁瑣等缺點(diǎn)，提出了一種新型的荷控型和磁控型憶阻器電路模型的搭建方法，該模型使用乘、除法器等運(yùn)算電路搭建出一個(gè)受控電壓源，使得模型的輸入電壓電流關(guān)系符合憶阻器的定義，而且電路的實(shí)現(xiàn)方式簡(jiǎn)單、工作可靠，還可以根據(jù)實(shí)際應(yīng)用需要，，通過(guò)設(shè)定直流電壓、電阻等參數(shù)的大小，實(shí)現(xiàn)憶阻值的工作范圍靈活調(diào)節(jié)，然后通過(guò)實(shí)驗(yàn)驗(yàn)證了該模型的有效性。 2.針對(duì)現(xiàn)階段的憶阻器電路模型功率等級(jí)較低這一缺點(diǎn)，提出一種大功率的憶阻器電路模型。該模型以D類功率放大器作為受控電壓源的輸出級(jí)，把作為控制級(jí)集成電路從主電路中分離出去，有效提高了電路模型的功率，并通過(guò)仿真和RT-LAB環(huán)境下的半實(shí)物模型驗(yàn)證了提出的大功率憶阻器電路模型的有效性。 3.對(duì)傳統(tǒng)的RC緩沖電路和RCD嵌位電路的工作機(jī)理進(jìn)行了分析，提出了用憶阻器代替RC作為緩沖器件和用MD（憶阻器和二極管）嵌位電路代替RCD元件作為緩沖器的設(shè)想，利用本文提出的憶阻器電路模型，在仿真中論證了兩種憶阻緩沖電路的可行性，并在實(shí)例計(jì)算中得出的憶阻型緩沖和嵌位電路比傳統(tǒng)RC緩沖電路和RCD嵌位電路更為節(jié)能的結(jié)論。
[Abstract]:The memristor is a passive device which was proposed by Chinese American scientist Cai Shaotang in 1971. It is the fourth basic elements of electrical resistance, capacitance and inductance in the circuit. It reflects the relationship between the flux in the circuit and the charge amount Q. The HP laboratory successfully uses TiO2 film to make a memristor in.2008 laboratory. It verifies the true existence of the memristor and makes the memristor The principle and application of the device have become one of the hotspots and frontiers of international circuit research. But because the TiO2 memristor is a nanometer device, it can not be used directly in power electronic circuits to facilitate the research on the application of the memristor in the field of power electronics. It needs to establish a circuit model of the memristor to meet the requirements of the experiment. Based on this, we further explore the possibility of memristor in power electronic circuits.
In this paper, by analyzing the electrical characteristics of the memristor and the advantages and disadvantages of the existing circuit model, a method of building the circuit model of the memristor is put forward, and the validity of the model is verified by the experiment. Then the idea of the application of the memristor in the buffer circuit is put forward, and the new memristor model is used to verify the idea.
The work done in this article includes the following aspects:
1. the definition of the memristor and the characteristics of the Hewlett-Packard Co memristor are studied. The circuit model of the existing memristor is discussed. Based on the complex structure of the existing model and the cumbersome parameter setting, a new method of building the circuit model of the charge controlled and magnetically controlled memristor is proposed. The model uses the multiplicative, divider and other operational circuits. A controlled voltage source is set up, which makes the input voltage and current relation of the model conforms to the definition of the memristor, and the realization of the circuit is simple and reliable. The working range of the memory resistance can be adjusted flexibly by setting the DC voltage and resistance parameters according to the practical application needs, and the experiment is verified by the experiment. The validity of the model.
2. in view of the disadvantage of low power level in the current memristor circuit model, a high power recristor circuit model is proposed. This model takes the D class power amplifier as the output level of the controlled voltage source, separates the control level integrated circuit from the main circuit, effectively improves the power of the circuit model, and through simulation and RT- The hardware in the loop model under LAB environment verifies the effectiveness of the proposed high power memristor circuit model.
3. the working mechanism of the traditional RC buffer circuit and the RCD inlay circuit is analyzed. The idea of replacing the RC with the memristor and using the MD (memristor and diode) inlay circuit instead of the RCD element is proposed. By using the circuit mode of the memristor proposed in this paper, two kinds of memristor buffer circuits are demonstrated in the simulation. It is concluded that the memristor buffer and the insertion circuit obtained in the calculation of the example are more energy efficient than the traditional RC buffer circuit and the RCD insertion circuit.

【學(xué)位授予單位】：華南理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM13

【參考文獻(xiàn)】

相關(guān)期刊論文 前3條

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2 劉樹(shù)林;曹曉生;馬一博;;RCD鉗位反激變換器的回饋能耗分析及設(shè)計(jì)考慮[J];中國(guó)電機(jī)工程學(xué)報(bào);2010年33期

3 段宗勝;甘朝暉;王勤;;一種改進(jìn)的憶阻器的SPICE模型及其仿真[J];微電子學(xué)與計(jì)算機(jī);2012年08期

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