本文選題：載流子復(fù)合　切入點(diǎn)：輻射復(fù)合　出處：《紅外與毫米波學(xué)報(bào)》2014年03期

【摘要】：激光誘發(fā)硅太陽(yáng)能電池產(chǎn)生載流子,由于少數(shù)載流子的復(fù)合而發(fā)射紅外輻射.基于一維載流子傳輸方程,建立了調(diào)制激光誘發(fā)PN結(jié)少數(shù)載流子密度模型,利用該模型仿真分析了載流子壽命、擴(kuò)散率、表面復(fù)合率及光電壓對(duì)輻射復(fù)合產(chǎn)生紅外輻射信號(hào)的影響.利用InGaAs紅外探測(cè)器(0.9~1.7μm)記錄激光誘發(fā)載流子輻射復(fù)合的紅外輻射信號(hào),用數(shù)字鎖相放大器提取了幅值與相位.通過(guò)頻率掃描試驗(yàn)獲得了多晶硅太陽(yáng)能電池載流子傳輸參數(shù).
[Abstract]:Laser induced silicon solar cells produce carriers and emit infrared radiation due to the recombination of a few carriers.Based on the one-dimensional carrier transport equation, a minority carrier density model of modulated laser-induced PN junction is established. The carrier lifetime and diffusivity are simulated and analyzed by using the model.The influence of surface recombination rate and photovoltage on infrared radiation signal produced by radiation recombination.The laser induced carrier radiation composite infrared radiation signal was recorded by using InGaAs infrared detector (0.9 渭 m), and the amplitude and phase were extracted by digital phase-locked amplifier.Carrier transport parameters of polysilicon solar cells were obtained by frequency scanning test.
【作者單位】： 哈爾濱工業(yè)大學(xué)機(jī)電工程學(xué)院;Center
【基金】：國(guó)家自然科學(xué)基金(51074208)~~
【分類(lèi)號(hào)】：TM914.4

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本文編號(hào)：1726791