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過(guò)渡族金屬半導(dǎo)體化合物在新型高效太陽(yáng)能電池中的應(yīng)用

發(fā)布時(shí)間:2018-03-13 21:19

  本文選題:有機(jī)-無(wú)機(jī)雜化太陽(yáng)能電池 切入點(diǎn):層狀材料硫化鈷 出處:《蘇州大學(xué)》2015年碩士論文 論文類(lèi)型:學(xué)位論文


【摘要】:本論文主要研究了過(guò)渡金屬半導(dǎo)體化合物在新型有機(jī)-硅及相關(guān)太陽(yáng)能電池的制備與性能表征。具體分為兩個(gè)部分,一是基于硅與共軛導(dǎo)電聚合物聚3,4二氧乙烯噻吩:聚苯乙烯磺酸(PEDOT:PSS)的高效有機(jī)-無(wú)機(jī)雜化太陽(yáng)能電池的制備及性能研究;二是基于體異質(zhì)結(jié)結(jié)構(gòu)的(3-己基噻吩(P3HT):富勒烯的衍生物(PC61BM)和聚苯并二噻吩(PTB7):富勒烯的衍生物(PC71BM)的有機(jī)太陽(yáng)能電池的制備及性能研究。主要工作包括以下幾個(gè)方面:1.以平面硅為基底,通過(guò)溶液旋涂法制備有機(jī)導(dǎo)電薄膜PEDOT:PSS,形成Si/PEDOT:PSS肖特基結(jié)的有機(jī)-無(wú)機(jī)雜化太陽(yáng)能電池。將通過(guò)水熱法合成的層狀材料硫化鈷摻入PEDOT:PSS中。在PEDOT:PSS薄膜中分散均勻的硫化鈷可以有效地提高薄膜的導(dǎo)電率和功函數(shù)。從而有效減少在有機(jī)導(dǎo)電薄膜和硅之間的電子空穴復(fù)合,提高空穴的傳輸效率。通過(guò)加入層狀硫化鈷,可以將光電轉(zhuǎn)換效率從9.46%提高到11.22%。2.通過(guò)金屬離子輔助溶液刻蝕技術(shù)制備雙面硅納米線(xiàn)陣列,并使用四甲基氫氧化銨修飾硅納米線(xiàn)陣列。將得到的具有硅納米陣列的硅片制成Si/PEDOT:PSS結(jié)構(gòu)的有機(jī)-無(wú)機(jī)雜化太陽(yáng)能電池,并在硅片與背電極間引入由納米氧化鋅顆粒制成的空穴阻擋層。通過(guò)這種方法使得有機(jī)-無(wú)機(jī)雜化太陽(yáng)能電池的效率提高到12.52%。效率的提升歸功于硅納米結(jié)構(gòu)對(duì)光吸收的增加,背電極接觸的改善以及空穴阻擋層對(duì)背面電荷復(fù)合的抑制。3.分別制備以P3HT:PCBM和PTB7:PCBM為活性層的有機(jī)太陽(yáng)能電池,將水熱法合成的層狀材料硫化鈷摻入活性層中,使得活性層的微觀結(jié)構(gòu)得到改善,有機(jī)材料的結(jié)晶性得到提高。通過(guò)GIXRD測(cè)試可以證實(shí)層狀材料硫化鈷摻入活性層后有增強(qiáng)有機(jī)材料結(jié)晶性的作用。通過(guò)這種辦法使得活性層的載流子遷移率得到提高,從而分別將有機(jī)太陽(yáng)能電池的效率提高到4.46%(P3HT:PCBM體系)和9.28%(PTB7:PCBM體系)。
[Abstract]:In this paper, the preparation and characterization of transition metal semiconductor compounds in novel organo-silicon and related solar cells were studied. The first is the preparation and performance study of high efficiency organic-inorganic hybrid solar cells based on silicon and conjugated conductive polymer poly (3o 4 dioxyethylene thiophene: polystyrene sulfonic acid) PEDOT: PSS. The second is the preparation and performance study of organic solar cells based on the bulk heterojunction structure of hexylthiophene P3HT: fullerene derivative PC61BM) and polybenzodithiophene PTB7: fullerene derivative PC71BM. the main work includes the following aspects. Based on planar silicon, Organic conductive thin film PEDOT: PSS was prepared by solution spin-coating method to form organic-inorganic hybrid solar cells with Si/PEDOT:PSS Schottky junction. Cobalt sulfide, a layered material synthesized by hydrothermal method, was doped into PEDOT:PSS. It was dispersed uniformly in PEDOT:PSS thin film. Cobalt can effectively improve the conductivity and work function of the film, thus effectively reducing the electron hole recombination between organic conductive film and silicon. The photoelectric conversion efficiency can be increased from 9.46% to 11.22 by adding layered cobalt sulfide. The double-sided silicon nanowire arrays are prepared by metal-ion assisted solution etching. Using tetramethylammonium hydroxide to modify silicon nanowire array, the organic inorganic hybrid solar cells with Si/PEDOT:PSS structure were prepared by using silicon wafer with silicon nanowire array. A hole barrier layer made of nano-zinc oxide particles was introduced between the silicon wafer and the back electrode. By this method, the efficiency of the organic-inorganic hybrid solar cells was increased to 12.52. The increase of the efficiency was attributed to the increase in the absorption of light by the silicon nanostructures. The improvement of back electrode contact and the inhibition of hole barrier layer on the back charge compound. 3. Organic solar cells with P3HT: PCBM and PTB7:PCBM as active layer were prepared, and the layered material cobalt sulfide was doped into the active layer by hydrothermal method. To improve the microstructure of the active layer, The crystallinity of the organic material was improved. The results of GIXRD test showed that cobalt sulfide doped in the active layer could enhance the crystallinity of the organic material. By this method, the carrier mobility of the active layer was improved. Thus, the efficiency of organic solar cells was increased to 4.46% P3HT: PCBM system and 9.28% PTB 7: PCBM system respectively.
【學(xué)位授予單位】:蘇州大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類(lèi)號(hào)】:TM914.4

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