發(fā)布時(shí)間：2018-01-19 18:49

  本文關(guān)鍵詞： 直流斷路器 SiC MOSFET 高壓 全固態(tài)　出處：《西安電子科技大學(xué)》2014年碩士論文　論文類型：學(xué)位論文

【摘要】：高壓直流斷路器(HVDC breaker,high voltage direct current breaker)是在高壓直流電路發(fā)生過載或者短路時(shí)及時(shí)將直流電路斷開,電路故障消除后將電路重新復(fù)位的電力保護(hù)電路。高壓直流斷路器主要用在高壓直流輸電系統(tǒng)和配電系統(tǒng)中,保證直流電路系統(tǒng)的安全可靠運(yùn)行。近年來,一方面,隨著可再生能源的開發(fā),為了減小輸送過程中電能的損耗,在遠(yuǎn)距離輸電過程中越來越多的采用直流輸電技術(shù);另一方面,隨著科學(xué)技術(shù)的飛速發(fā)展,個(gè)人和企業(yè)對(duì)電能質(zhì)量的要求不斷提高,在電能的分配過程中采用直流配電是提高電能質(zhì)量的一個(gè)重要方式和發(fā)展方向。高壓直流斷路器作為保障直流輸電系統(tǒng)和配電系統(tǒng)安全穩(wěn)定運(yùn)行的關(guān)鍵性部件,人們?cè)絹碓街匾曋绷鲾嗦菲鞯难邪l(fā),成為當(dāng)前電力電子領(lǐng)域的一大研究熱點(diǎn)。隨著半導(dǎo)體工藝的不斷進(jìn)步,SiC功率器件越來越成熟。相對(duì)于傳統(tǒng)Si功率器件,SiC功率MOSFET具有耐高壓、高溫、高開關(guān)速度以及低導(dǎo)通阻抗等一系列優(yōu)點(diǎn),使得SiC功率MOSFET作為電力電子開關(guān)元件應(yīng)用越來越廣泛;同時(shí)和新型Si材料IGBT相比較,SiC功率MOSFET開關(guān)速度更快,溫度的變化對(duì)器件性能的影響更小。通過分析可知,SiC功率MOSFET滿足全固態(tài)高壓直流斷路器對(duì)全控型電力電子開關(guān)元件的要求。本文的主要工作是基于SiC功率MOSFET開關(guān)元件,設(shè)計(jì)并制作了全固態(tài)高壓直流斷路器。論文首先介紹了直流斷路器的應(yīng)用背景和現(xiàn)狀;然后著重分析了直流斷路器的工作原理以及SiC功率MOSFET的優(yōu)勢(shì)和電路特性;然后根據(jù)直流斷路器電路功能,將電路主要分為四個(gè)功能模塊電路,并使用一個(gè)負(fù)載電路用于模擬短路故障。四個(gè)功能電路模塊根據(jù)負(fù)載電路電流的變化,產(chǎn)生相應(yīng)的控制信號(hào)控制直流斷路器的關(guān)斷或者復(fù)位;其中電流檢測(cè)電路檢測(cè)負(fù)載電路電流的變化,電平鎖定電路鎖定產(chǎn)生的控制信號(hào),柵極驅(qū)動(dòng)電路實(shí)現(xiàn)柵源電壓的升壓和虛地,復(fù)位檢測(cè)電路避免電路的誤開啟;然后在四個(gè)功能電路模塊的基礎(chǔ)上設(shè)計(jì)出具有SiC功率MOSFET驅(qū)動(dòng)電路的全固態(tài)高壓直流斷路器電路;最后根據(jù)設(shè)計(jì)的電路圖,制作出直流斷路器樣機(jī)。本文設(shè)計(jì)的高壓直流斷路器電路采用OrCAD仿真軟件進(jìn)行設(shè)計(jì),并進(jìn)行了仿真驗(yàn)證,仿真結(jié)果表明該直流斷路器電路實(shí)現(xiàn)了功率為12KW的負(fù)載電路的關(guān)斷和復(fù)位,柵極驅(qū)動(dòng)電路待機(jī)功耗為0,同時(shí)直流斷路器實(shí)現(xiàn)了控制信號(hào)的鎖定、柵源電壓的升壓和虛地,避免了直流斷路器的誤開啟操作;最后對(duì)直流斷路器樣機(jī)進(jìn)行了相應(yīng)的測(cè)試,測(cè)試結(jié)果表明直流斷路器實(shí)現(xiàn)了對(duì)負(fù)載電路的電力保護(hù),功能和仿真結(jié)果相一致,樣機(jī)的反應(yīng)時(shí)間約為30μs。本文設(shè)計(jì)的直流斷路器應(yīng)用范圍有限,主要用于純阻性負(fù)載電路;可以通過軟開關(guān)技術(shù)消除容性負(fù)載中產(chǎn)生的過電流或者感性負(fù)載中的過電壓,將其應(yīng)用范圍擴(kuò)大到所有的負(fù)載電路。
[Abstract]:HVDC breaker. High voltage direct current breaker is to break the DC circuit in time when the high voltage DC circuit is overload or short circuit. In recent years, HVDC circuit breaker is mainly used in HVDC transmission system and distribution system to ensure the safe and reliable operation of DC circuit system. On the one hand, with the development of renewable energy, in order to reduce the loss of electrical energy in the transmission process, DC transmission technology is used more and more in the long distance transmission process. On the other hand, with the rapid development of science and technology, individuals and enterprises to improve the quality of power. DC distribution is an important way to improve power quality in the process of power distribution. HVDC circuit breaker is the key component to ensure the safe and stable operation of HVDC transmission system and distribution system. More and more attention has been paid to the research and development of DC circuit breakers, which has become a major research hotspot in the field of power electronics. Compared with the traditional Si power device, sic power MOSFET has a series of advantages, such as high pressure, high temperature, high switching speed and low on-on impedance. SiC power MOSFET is more and more widely used as power electronic switch element. At the same time, compared with the new Si material IGBT, sic power MOSFET switch speed is faster, and the influence of temperature on the device performance is less. SiC power MOSFET meets the requirements of all-solid-state HVDC circuit breakers for full-control power electronic switch components. The main work of this paper is based on SiC power MOSFET switch elements. All solid-state HVDC circuit breakers are designed and fabricated. Firstly, the application background and current situation of DC circuit breakers are introduced. Then, the working principle of DC circuit breaker and the advantages and circuit characteristics of SiC power MOSFET are analyzed. Then according to the circuit function of DC circuit breaker, the circuit is divided into four functional modules, and a load circuit is used to simulate the short-circuit fault. Generating a corresponding control signal to control the turn-off or reset of the DC circuit breaker; The current detection circuit detects the change of the load circuit current, the control signal generated by the level locking circuit, the gate drive circuit realizes the voltage boost and virtual ground of the gate source voltage, and the reset detection circuit avoids the false opening of the circuit. Then the all-solid-state HVDC circuit breaker with SiC power MOSFET driving circuit is designed on the basis of four functional circuit modules. Finally, according to the circuit diagram of the design, the prototype of DC circuit breaker is made. The circuit of HVDC circuit breaker designed in this paper is designed by OrCAD simulation software, and verified by simulation. The simulation results show that the circuit can turn off and reset the load circuit with power of 12KW, the power consumption of the gate drive circuit is 0, and the control signal of the circuit breaker is locked. The boost of gate source voltage and virtual ground avoid the misoperation of DC circuit breaker; Finally, the prototype of DC circuit breaker is tested. The test results show that DC circuit breaker realizes the power protection of load circuit, and the function is consistent with the simulation result. The reaction time of the prototype is about 30 渭 s. The DC circuit breaker designed in this paper has a limited application range and is mainly used in pure resistive load circuit. The overcurrent generated in capacitive load or the overvoltage in inductive load can be eliminated by soft-switching technology, and its application scope can be extended to all load circuits.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2014
【分類號(hào)】：TM561

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 王丹;毛承雄;陸繼明;陳迅;曾杰;張俊峰;;直流配電系統(tǒng)技術(shù)分析及設(shè)計(jì)構(gòu)想[J];電力系統(tǒng)自動(dòng)化;2013年08期

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本文編號(hào)：1445118