本文關鍵詞： 碳化硅MOSFET 高頻開關 小型化 大功率 高壓電源　出處：《電子科技大學》2014年碩士論文　論文類型：學位論文

【摘要】：高壓電源是電力電子系統(tǒng)中的基本能量轉換單元,在軍事、科研、醫(yī)療、環(huán)境工程等方面表現(xiàn)得十分搶眼。它為高功率微波(HPM)源提供能量,尤其是以回旋管為代表的電真空器件需要它提供極高的電壓和足夠大的功率。而在應對非傳統(tǒng)安全時,對高功率微波系統(tǒng)的可移動性和隱蔽性提出了苛刻的要求,因此在系統(tǒng)設計時,提高大功率高壓電源的功率密度十分迫切。碳化硅(SiC)器件打破了硅(Si)器件的物理應用極限,使用它能夠提高開關頻率、減少損耗和簡化復雜龐大的散熱系統(tǒng),可有效的實現(xiàn)高壓電源的小型化。全文設計有效的利用了碳化硅絕緣柵型場效應管(MOSFET)和肖特基勢壘二極管(SBD)的高頻開關特性以及耐高溫、耐高壓和導通損耗小的物理特性。本文對高壓電源的基本拓撲結構和饋電方式做了介紹,分析了串并聯(lián)諧振充電(LCC)技術,對諧振參數(shù)的計算公式做了詳細的推導,并提出了簡易、精確的計算方法。本文重點解決了一個主要矛盾:提高開關頻率時,諧振電感電容乘積小而輸出功率卻很大、升壓很高。由于開關頻率過高,變壓器升壓困難、高頻損耗很大,并且絕緣處理棘手,導致變壓器漏感和高壓分布參數(shù)的乘積很大,限制了諧振電路的正常工作,以致單個模塊的輸出有限。所以著重針對大功率高壓高頻電源的升壓結構和高壓模塊的組合進行了分析和設計,有效的降低了諧振電感電容的乘積,實現(xiàn)了功率容量的擴展和系統(tǒng)工程的集成。在提高開關頻率時還要解決后繼問題:高壓高頻變壓器及整流器的封裝、高頻整流和大功率MOSFET的快速驅動。而高頻整流不同于傳統(tǒng)的高壓硅堆整流,需要考慮高壓分布參數(shù)和絕緣的影響,本文用SiC-SBD的串聯(lián)來替換了高壓硅堆整流器,并考慮了高壓二極管串聯(lián)的均壓問題。在進行電氣設計和高電壓試驗時,要保證設計的合理性和安全性,因此本文分析和總結了大量的工程實踐經驗,包括:高電壓分布參數(shù)的處理和測試、高電壓接地技術和安全放電、快速驅動和保護電路設計、熱設計和絕緣處理、以及電磁兼容分析和負載測試。最后分別計算、仿真和對比了全碳化硅開關高壓電源和傳統(tǒng)高壓電源。
[Abstract]:High voltage power supply is the basic energy conversion unit in power electronic system, which is very attractive in military, scientific research, medical treatment, environmental engineering and so on. It provides energy for high power microwave / HPM-based power source. Especially the electrical vacuum device represented by gyrotron needs it to provide extremely high voltage and enough power. The mobility and concealment of the high power microwave system are demanding, so in the design of the system. It is very urgent to improve the power density of high power high voltage power supply. Sic device has broken the physical application limit of SiC device, and the switching frequency can be increased by using it. Reduce wastage and simplify complex and large heat dissipation systems. It can realize the miniaturization of high voltage power supply effectively. The full design makes use of silicon carbide insulated gate FET (MOSFET) and Schottky barrier diode (SBD). High frequency switching characteristics and high temperature resistance. In this paper, the basic topology and feed mode of high voltage power supply are introduced, and the series-parallel resonant charging technology is analyzed. The formula of resonant parameters is deduced in detail, and a simple and accurate calculation method is put forward. This paper focuses on solving a major contradiction: increasing the switching frequency. The resonant inductance capacitance product is small, but the output power is very big, the boost voltage is very high, because the switching frequency is too high, the transformer boost voltage is difficult, the high frequency loss is very big, and the insulation processing is difficult. As a result, the product of leakage inductance and high voltage distribution parameters of transformer is very large, which limits the normal operation of resonant circuit. As a result, the output of a single module is limited. Therefore, the combination of the high-power high-voltage high-frequency power supply and the high-voltage module is analyzed and designed, which effectively reduces the product of the resonant inductance capacitance. It realizes the expansion of power capacity and the integration of system engineering. It also solves the following problems when increasing the switching frequency: the packaging of high-voltage high-frequency transformer and rectifier. The high frequency rectifier is different from the traditional high voltage silicon stack rectifier, and the influence of high voltage distribution parameters and insulation should be considered. In this paper, the SiC-SBD series is used to replace the high voltage silicon stack rectifier, and the voltage equalization problem of the high voltage diode in series is considered. The electrical design and high voltage test are carried out. To ensure the rationality and safety of the design, this paper analyzes and summarizes a large number of engineering experience, including: processing and testing of high voltage distribution parameters, high voltage grounding technology and safe discharge. Fast drive and protection circuit design, thermal design and insulation treatment, electromagnetic compatibility analysis and load test. Finally, the calculation, simulation and comparison of the full carbide switch high voltage power supply and the traditional high voltage power supply are given.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TN86;TN386

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本文編號：1445004