【摘要】：作為代表性的高-k材料,Hf02與硅基CMOS集成電路工藝具有良好的兼容性,并已經(jīng)被廣泛應用于微電子工業(yè)。近幾年的研究發(fā)現(xiàn),使用特殊工藝制備的Hf02基薄膜具有優(yōu)異的鐵電性能。因此,采用Hf02基新型鐵電薄膜材料代替鋯鈦酸鉛(PZT)等傳統(tǒng)鐵電材料將有望突破制約非易失性鐵電存儲器發(fā)展的材料瓶頸。 本論文初步探索了兩種不同的溶膠.凝膠工藝制備純Hf02以及Y摻雜的Hf02納米薄膜。具有鐵電性的Hf02薄膜制備在工藝上有幾個難點需要注意：薄膜厚度要足夠薄,需將薄膜控制在10nm左右；制備工藝需滿足薄膜中摻雜的要求；最后,Hf02薄膜質(zhì)量需滿足電學性能要求。采用橢偏儀和X射線反射率(XRR)技術測量薄膜的厚度；薄膜表面形貌以及表面粗糙度的測試通過原子力顯微鏡(AFM)來完成；采用X射線光電子能譜(XPS)對薄膜化學鍵結合情況以及各元素的含量進行了分析；最后,通過鐵電性能分析儀對Y摻雜Hf02薄膜電容器的電學性能進行了測量。 采用表面溶膠.凝膠方法可以制備出超薄Hf02薄膜,但是隨著浸鍍次數(shù)的增加,薄膜的生長趨于飽和,膜厚很難超過5nm；同時該工藝難以對薄膜進行摻雜改性。采用純水基溶膠.凝膠工藝能夠穩(wěn)定制備出厚度為10nm的Y摻雜Hf02薄膜,薄膜成分符合化學計量比,表面粗糙度僅為0.19nm,初步的電學性能測試結果表明該工藝適合于面向存儲器應用的高性能Hf02基鐵電薄膜的制備。
[Abstract]:As a representative high-k material, Hf02 has good compatibility with silicon-based CMOS integrated circuit technology, and has been widely used in microelectronics industry. In recent years, it has been found that Hf02 based films prepared by special process have excellent ferroelectric properties. Therefore, the use of new ferroelectric thin films based on Hf02 to replace traditional ferroelectric materials such as lead zirconate titanate (PZT) will be expected to break through the material bottleneck which restricts the development of nonvolatile ferroelectric memory. In this paper, two different sols were preliminarily explored. Pure Hf02 and Y doped Hf02 nanocrystalline films were prepared by gel process. There are several difficulties in the preparation of ferroelectric Hf02 thin films. The thickness of the thin films should be thin enough to control the thin films about 10nm and the preparation process should meet the requirements of doping in the films. Finally, the quality of Hf02 films should meet the requirements of electrical properties. The thickness of the films was measured by ellipsometry and X-ray reflectance (XRR). The surface morphology and roughness of the films were measured by atomic force microscope (AFM) (AFM). X-ray photoelectron spectroscopy (XPS) was used to analyze the binding of chemical bonds and the contents of various elements in the films. Finally, the electrical properties of Y doped Hf02 thin film capacitors were measured by ferroelectric performance analyzer. Surface sol was used. Ultrathin Hf02 thin films can be prepared by gel method, but with the increase of dipping times, the growth of the films tends to saturation, the film thickness is difficult to exceed 5 nm, and it is difficult to modify the films by doping. Pure water based sol was used. Y-doped Hf02 thin films with thickness of 10nm can be prepared stably by gel process. The composition of the films conforms to stoichiometric ratio, and the surface roughness is only 0.19 nm. The preliminary test results of electrical properties show that this process is suitable for the preparation of high performance Hf02 based ferroelectric thin films for memory applications.
【學位授予單位】：大連理工大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TQ134.13;TB383.2

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