【摘要】：以SnCl_4·5H_2O為錫源,SnF_2為氟源,采用溶膠-凝膠-蒸鍍法制備F摻雜的SnO_2透明導(dǎo)電氧化物薄膜(FTO薄膜).通過正交實(shí)驗(yàn)研究確定最佳反應(yīng)溫度、反應(yīng)時(shí)間和蒸鍍溫度等制備條件.主要研究元素F的摻雜和膜的結(jié)構(gòu)對(duì)FTO薄膜性能的影響,并采用傅里葉變換紅外光譜儀、熱重-差熱分析、X射線衍射、高分辨透射電子顯微鏡和掃描電子顯微鏡等進(jìn)行樣品的性能表征.研究結(jié)果表明,當(dāng)反應(yīng)溫度50?C、反應(yīng)時(shí)間5 h、燒結(jié)(蒸鍍)溫度600?C、鍍膜次數(shù)1次、而F/Sn=14 mol%時(shí),FTO薄膜性能指數(shù)ΦTC最大,綜合光電性能最優(yōu),表面電阻為14.7?·cm-1,平均透光率為74.4%.FTO薄膜內(nèi)顆粒的平均粒徑為20 nm,呈四方金紅石型結(jié)構(gòu),F的摻入替代了部分的O,形成了SnO_(2-x)F_x晶體結(jié)構(gòu).F的摻雜量是影響FTO薄膜的主要因素,F過多或過少均不利于SnO_(2-x)F_x晶體的生長;FTO薄膜的結(jié)構(gòu)、顆粒形狀、大小等三維信息也是影響薄膜性能的因素,主要表現(xiàn)為分形維數(shù)越小,薄膜表面越平整,勢(shì)壘越低,導(dǎo)電性能越好.
[Abstract]:F doped SnO_2 transparent conductive oxide thin films (FTO films) were prepared by sol-gel evaporation method with SnCl_4 5H_2O as tin source and SnFST2 as fluorine source. The optimum reaction temperature, reaction time and evaporation temperature were determined by orthogonal experiment. The influence of the doping of F and the structure of the film on the properties of FTO thin films was studied. The Fourier transform infrared spectroscopy (FTIR) was used to analyze the X-ray diffraction of FTO films by thermogravimetric differential thermal analysis (TG-DTA). The properties of the samples were characterized by high resolution transmission electron microscope (TEM) and scanning electron microscope (SEM). The results show that when the reaction temperature is 50 鈩，

本文編號(hào)：2207434