本文關鍵詞： 功率半導體器件 IGBT 功率集成電路 LDMOS 三相馬達驅動芯片　出處：《浙江大學》2014年碩士論文　論文類型：學位論文

【摘要】：隨著世界范圍內能源危機的到來,各國政府都在為經(jīng)濟可持續(xù)發(fā)展的目的積極推廣節(jié)能降耗技術。高效節(jié)能已經(jīng)成為未來電子產(chǎn)品發(fā)展的一個重要方向。目前,電源能耗標準已經(jīng)在全球逐步實施,世界各國已對家電與消費電子產(chǎn)品的待機功耗與效率開始實施越來越嚴格的省電要求。功率半導體器件與功率集成電路在電力、能源、航天及消費類電子領域扮演著不可或缺的角色,因此,功率半導體器件與功率集成電路的研究與開發(fā),具有舉足輕重的地位。 本論文的主要工作及創(chuàng)新點： 1、對功率分立器件IGBT進行了深入研究。重點研究了IGBT的開關特性和安全工作區(qū)。通過TCAD工具仿真和流片測試,分析了IGBT開啟過程中遇到的共性問題——在IGBT的開啟過程中,集電極電壓Vce在短時間內出現(xiàn)不降反升的現(xiàn)象。通過調研文獻、仿真和測試的對比,作者提出了一種IGBT的開啟機制,完美地解釋了上述出現(xiàn)的異常現(xiàn)象,并對相關參數(shù)進行了仿真,從而提出了降低IGBT開關功耗的新思路。 2、設計了一款基于BCD工藝的500V三相馬達驅動芯片。針對變頻節(jié)能空調的應用,開發(fā)出具有自主知識產(chǎn)權的500V三相馬達驅動智能功率芯片產(chǎn)品。該芯片采用PN結對通隔離,將電源電路、低壓控制邏輯電路、20KHz振蕩器、PWM控制電路、過熱、過流、欠壓保護電路,高低端驅動電路、自舉二極管以及由六個LDMOS組成的三相半橋驅動電路集成在同一芯片上。因此該芯片高度集成化、小型化以及智能化。相比于Toshiba公司用較為昂貴的SOI工藝設計,本文采用相對便宜并且成熟的BCD外延工藝進行設計,雖然難度較大,但是成本能降低不少,因此可以取代進口,實現(xiàn)國產(chǎn)化。另外,創(chuàng)造性地設計了NLDMOS上管結構,既減少了掩膜板的數(shù)量,又節(jié)省了芯片面積。
[Abstract]:With the arrival of the worldwide energy crisis, governments of all countries are actively promoting energy-saving technologies for the purpose of sustainable economic development. Efficient energy saving has become an important direction for the development of electronic products in the future. At present, Power consumption standards have been implemented step by step in the world. Countries in the world have begun to implement more and more stringent power saving requirements for the standby power consumption and efficiency of household appliances and consumer electronic products. Aerospace and consumer electronics play an indispensable role, so the research and development of power semiconductor devices and power integrated circuits play an important role. The main work and innovation of this thesis are as follows:. 1. The power discrete device IGBT is studied in depth. The switching characteristics and safe working area of IGBT are studied emphatically. The common problems encountered in the process of IGBT opening are analyzed through the simulation of TCAD tools and the test of streamer, which is the common problem in the process of IGBT opening. The collector voltage Vce appears the phenomenon of not falling but rising in a short period of time. Based on the investigation and comparison of literature, simulation and test, the author puts forward a mechanism of opening IGBT, which perfectly explains the abnormal phenomenon mentioned above. The related parameters are simulated, and a new idea to reduce the power consumption of IGBT switch is proposed. 2. A 500V three-phase motor drive chip based on BCD process is designed. In view of the application of frequency conversion and energy-saving air conditioning, a 500V three-phase motor driving intelligent power chip with independent intellectual property is developed. The power supply circuit, low voltage control logic circuit, 20kHz oscillator PWM control circuit, overheating, overcurrent, undervoltage protection circuit, high and low end drive circuit, The bootstrap diode and the three-phase half-bridge drive circuit composed of six LDMOS are integrated on the same chip. Therefore, the chip is highly integrated, miniaturized and intelligent. In this paper, the relatively cheap and mature BCD epitaxy process is adopted. Although it is difficult, but the cost can be reduced a lot, so it can replace the import and realize the localization. In addition, the NLDMOS tube structure is designed creatively. Not only reduce the number of mask board, but also save the chip area.
【學位授予單位】：浙江大學
【學位級別】：碩士
【學位授予年份】：2014
【分類號】：TN322.8;TN402

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