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重復(fù)經(jīng)顱磁刺激電容充電技術(shù)的研究

發(fā)布時(shí)間:2018-02-20 15:08

  本文關(guān)鍵詞: 重復(fù)經(jīng)顱磁刺激 電容充電技術(shù) 串聯(lián)諧振 恒流充電 數(shù)字控制技術(shù) 高頻變壓器 出處:《生物醫(yī)學(xué)工程研究》2017年04期  論文類型:期刊論文


【摘要】:本研究將高頻串聯(lián)諧振恒流充電技術(shù)應(yīng)用到重復(fù)經(jīng)顱磁刺激(r TMS)供電系統(tǒng),充電電壓誤差保持在5%以內(nèi),刺激頻率由原先的幾赫茲提高到十幾赫茲,有效地提高了r TMS供電系統(tǒng)的充電精度和充電速度。本研究還設(shè)計(jì)了以STM32為核心的數(shù)字控制系統(tǒng),提高了電源的可控性,解決了傳統(tǒng)模擬控制方式不可編程、可控性差的不足。最后搭建了實(shí)驗(yàn)樣機(jī),連入r TMS系統(tǒng)進(jìn)行測(cè)試,工作在500 V時(shí),r TMS刺激頻率最高可以達(dá)到31 Hz;工作在1 000 V時(shí),刺激頻率最高可以達(dá)到20 Hz。
[Abstract]:In this study, the high frequency series resonant constant current charging technique was applied to the repetitive transcranial magnetic stimulation (TMS) power supply system. The charging voltage error was kept within 5%, and the stimulation frequency was increased from several hertz to more than 10 hertz. The charging accuracy and charging speed of r TMS power supply system are improved effectively. A digital control system based on STM32 is designed, which improves the controllability of power supply and solves the problem that the traditional analog control mode can not be programmed. At last, the experiment prototype was built and tested with r TMS system. The maximum stimulating frequency of r TMS was 31 Hz at 500V and 20 Hz when working at 1 000 V.
【作者單位】: 中國(guó)科學(xué)院生物電磁學(xué)北京市重點(diǎn)實(shí)驗(yàn)室中國(guó)科學(xué)院電工研究所;中國(guó)科學(xué)院大學(xué)電子電氣與通信工程學(xué)院;
【基金】:國(guó)家自然科學(xué)基金資助項(xiàng)目(51577183,31400717)
【分類號(hào)】:R318

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相關(guān)期刊論文 前1條

1 于陽(yáng);李s,

本文編號(hào):1519266


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