本文選題：碲鎘汞 + 紅外探測(cè)器��； 參考：《中國(guó)科學(xué)院研究生院(上海技術(shù)物理研究所)》2016年博士論文

【摘要】：在高性能紅外焦平面探測(cè)器快速發(fā)展的驅(qū)使下,新一代碲鎘汞紅外探測(cè)器不僅要實(shí)現(xiàn)新型探測(cè)器的結(jié)構(gòu)設(shè)計(jì)與優(yōu)化,還要發(fā)展新型探測(cè)器的特殊芯片工藝與集成技術(shù)。本文一方面采用Crosslight公司的半導(dǎo)體器件Apsys模擬軟件,設(shè)計(jì)并優(yōu)化了雙色、陷光和硅(Si)基長(zhǎng)波等新型碲鎘汞紅外探測(cè)器,另一方面研究了有利于碲鎘汞紅外探測(cè)器陡直圖形芯片表面均勻覆蓋的原子層沉積技術(shù)(ALD)和ALD鈍化膜的表面與界面特性。1.新型碲鎘汞紅外探測(cè)器的結(jié)構(gòu)設(shè)計(jì)與優(yōu)化。進(jìn)行了同時(shí)模式n~+-p_1-P_2-P_3-N~+碲鎘汞MW/LW雙色探測(cè)器芯片的結(jié)構(gòu)設(shè)計(jì),通過優(yōu)化勢(shì)壘層的組分與厚度等參數(shù),獲得了MW-LW和LW-MW光譜串音都小于2%的雙色探測(cè)器結(jié)構(gòu);理論研究了集成陷光結(jié)構(gòu)的碲鎘汞n~+-on-p中波探測(cè)器,基于光敏元內(nèi)垂直腔尺寸與分布的設(shè)計(jì),陷光結(jié)構(gòu)的探測(cè)器在不損失量子效率的前提下可實(shí)現(xiàn)暗電流的抑制;提出了一種p-on-N+異質(zhì)結(jié)結(jié)構(gòu)的Si基碲鎘汞長(zhǎng)波探測(cè)器,仿真結(jié)果表明該構(gòu)形長(zhǎng)波探測(cè)器不僅能抑制入射界面的光生載流子復(fù)合,顯著提高響應(yīng)波段的探測(cè)率,同時(shí)還能通過改變N+層組分實(shí)現(xiàn)器件起始波長(zhǎng)的靈活調(diào)節(jié)和響應(yīng)波段光譜區(qū)間的寬度控制。2.氧化鋁(Al_2O_3)膜的ALD生長(zhǎng)技術(shù)與鈍化特性。利用ALD技術(shù)實(shí)現(xiàn)了碲鎘汞紅外探測(cè)器芯片表面Al_2O_3膜的65℃低溫生長(zhǎng);Al_2O_3膜在碲鎘汞紅外探測(cè)器陡直圖形芯片表面的膜厚均勻、覆蓋致密;制備了Al_2O_3膜鈍化的碲鎘汞MIS器件和變面積光電二極管芯片;實(shí)驗(yàn)獲得的Al_2O_3膜的介電常數(shù)約為7.0,表面復(fù)合速率、表面固定電荷密度以及慢界面態(tài)密度等界面特性與常規(guī)的CdTe/ZnS雙層鈍化膜相近;180℃高溫退火處理提高了ALD-Al_2O_3膜的鈍化效果,但在75℃/48h的烘烤后,MIS器件的C-V特性和變面積光電二極管芯片的R-V特性略有下降。3.硫化鋅(ZnS)膜的ALD生長(zhǎng)技術(shù)與鈍化特性。利用ALD技術(shù)實(shí)現(xiàn)了碲鎘汞紅外探測(cè)器芯片表面ZnS膜的65℃低溫生長(zhǎng);ZnS膜在碲鎘汞紅外探測(cè)器陡直圖形芯片表面的膜厚均勻、覆蓋致密;制備了ZnS膜鈍化的碲鎘汞MIS器件和變面積光電二極管芯片;實(shí)驗(yàn)獲得的ZnS膜的介電常數(shù)約為6.0,表面固定電荷密度以及慢界面態(tài)密度等界面特性與常規(guī)的CdTe/ZnS雙層鈍化膜相近,而快界面態(tài)密度要高1個(gè)數(shù)量級(jí);變面積光電二極管芯片的R-V特性也比常規(guī)的CdTe/ZnS雙層鈍化膜差約1個(gè)數(shù)量級(jí);通過常規(guī)ZnS膜預(yù)覆蓋的碲鎘汞表面處理實(shí)驗(yàn),初步確定了ALD-ZnS膜未能達(dá)到理想的鈍化效果與碲鎘汞/ZnS界面狀態(tài)是直接相關(guān)的。
[Abstract]:Driven by the rapid development of high performance infrared focal plane detectors, the new generation of HgCdTe infrared detectors should not only realize the structural design and optimization of new detectors, but also develop the special chip technology and integrated technology of new type detectors. On the one hand, a new type of HgCdTe infrared detectors, such as two-color, trapping and Si-based long-wave detectors, are designed and optimized by using the semiconductor device Apsys software of Crosslight Company. On the other hand, the surface and interface characteristics of ALD passivated film and ALD (atomic layer deposition technique) which are favorable to uniform surface coverage of HgCdTe infrared detector are studied. Structure Design and Optimization of a New HgCdTe Infrared detector. The structure design of the MW/LW dual-color detector chip with simultaneous mode n-psp 1-P2-P2-P3-N- HgCdTe has been carried out. By optimizing the composition and thickness of the barrier layer, a dual-color detector structure with MW-LW and LW-MW spectral crosstalk less than 2% has been obtained. Based on the design of vertical cavity size and distribution in Guang Min element, the trapped structure detector can suppress the dark current without losing quantum efficiency. A Si-based HgCdTe long wave detector with p-on-N heterojunction structure is proposed. The simulation results show that the configuration can not only suppress the photogenerated carrier recombination at the incident interface, but also improve the detectability of the response band. At the same time, we can adjust the starting wavelength of the device flexibly and control the width of the spectral region of the response band by changing the N layer component. ALD growth and passivation characteristics of Al _ 2O _ 3 / Al _ 2O _ 3 films. The ALD technique was used to realize the low temperature growth of Al_2O_3 film at 65 鈩，

本文編號(hào)：1959466