【摘要】：隨著航空航天、顯示照明、生物醫(yī)療等方面的不斷發(fā)展,人們對(duì)周期微納結(jié)構(gòu)的要求日趨苛刻,需要同時(shí)滿足大面積、高精度、圖案復(fù)雜化、制備周期短、良品率高等條件。傳統(tǒng)光刻術(shù)已無法滿足需求而受到嚴(yán)重挑戰(zhàn),新型可批量生產(chǎn)、高精度、高良率的周期微納加工技術(shù)逐漸成為研究熱點(diǎn)。本文首先對(duì)現(xiàn)有的周期微納加工技術(shù)及泰伯自成像光刻進(jìn)行了相關(guān)調(diào)研。區(qū)別于傳統(tǒng)光刻技術(shù),泰伯自成像光刻不需要昂貴的光學(xué)成像系統(tǒng),直接利用泰伯效應(yīng)產(chǎn)生的周期物體自成像進(jìn)行光刻,具有可修復(fù)周期微納陣列存在的微小缺陷等優(yōu)勢(shì)。但因其自成像焦深淺,分辨率受掩模精度限制等問題,嚴(yán)重制約了泰伯光刻術(shù)在周期微納結(jié)構(gòu)制備領(lǐng)域的應(yīng)用。因此,本文主要對(duì)紫外自成像光刻術(shù)和可克服有限焦深問題的掃描積分自成像光刻術(shù)進(jìn)行深入研究。首先,從標(biāo)量衍射理論出發(fā),對(duì)紫外泰伯光刻技術(shù)的衍射成像機(jī)制以及光源的入射條件對(duì)其成像的影響進(jìn)行了研究分析;在此基礎(chǔ)之上對(duì)掃描積分泰伯光刻術(shù)的成像原理進(jìn)行了理論推導(dǎo),通過模擬仿真分析得出掃描積分泰伯光刻術(shù)具有克服有限焦深,同時(shí)可實(shí)現(xiàn)周期倍頻的特性;進(jìn)一步地,分析了影響掃描積分泰伯光刻術(shù)成像質(zhì)量的主要因素;為驗(yàn)證該方法的可行性,對(duì)現(xiàn)有接近式光刻機(jī)進(jìn)行優(yōu)化改進(jìn),結(jié)合光刻工藝實(shí)驗(yàn),探索了利用掃描積分泰伯光刻術(shù)制備周期倍頻的振幅型光柵的實(shí)驗(yàn)方法。綜上研究結(jié)果表明,上述方法可克服定位型泰伯光刻術(shù)的有限焦深問題,并能實(shí)現(xiàn)倍頻的周期陣列制備,可將泰伯光刻術(shù)分辨率提高一倍。此外,本文還通過理論分析和模擬仿真的方法,拓展探究了紫外泰伯光刻術(shù)對(duì)存在缺陷的一維光柵和二維斜周期陣列的缺陷修復(fù)效應(yīng)及其影響因素。模擬分析表明,當(dāng)缺失面積小,缺失單元分散時(shí),泰伯光刻術(shù)結(jié)合高對(duì)比度光刻膠特性,可較好的恢復(fù)缺失單元;當(dāng)缺失面積大,缺失單元集中時(shí),泰伯光刻術(shù)無法實(shí)現(xiàn)掩模的缺陷修復(fù)。
[Abstract]:With the development of aerospace, display lighting, biomedicine and so on, the requirement of periodic micro-nano structure is becoming more and more demanding, which needs to meet the requirements of large area, high precision, complicated pattern, short preparation period and high quality rate. Traditional photolithography has not been able to meet the needs of the serious challenges, a new batch production, high precision, high yield of periodic micro-nano processing technology has gradually become a research hotspot. In this paper, the existing periodic micro-nano processing technology and Taiber self-image lithography were investigated. Different from the traditional lithography technology, it does not need expensive optical imaging system, and it has the advantage of repairing the microdefects of periodic micro-nano arrays by directly using the periodic object image generated by the Tyber effect for lithography. However, the application of Taber photolithography in the fabrication of periodic micro-nano structures is seriously restricted because of its shallow image focus and limited resolution by mask precision. Therefore, this paper mainly focuses on UV self-imaging lithography and scanning integral self-imaging lithography, which can overcome the problem of limited focal depth. Firstly, based on the scalar diffraction theory, the diffraction imaging mechanism of UV Tieber lithography and the influence of the incident condition of the light source on the imaging are studied and analyzed. On the basis of this, the imaging principle of Scan-integral Taber lithography is deduced theoretically. Through simulation and simulation analysis, it is concluded that SIGT has the characteristics of overcoming the limited focal depth and realizing periodic frequency doubling. In order to verify the feasibility of the method, the existing proximity lithography machine is optimized and improved, combined with the experiment of lithography process, the paper analyzes the main factors that affect the imaging quality of the scanning integral Taber lithography, and in order to verify the feasibility of the method, the existing proximity lithography machine is optimized and improved. An experimental method for fabricating amplitude grating with periodic frequency doubling by scanning integral Taber lithography was investigated. The above results show that the proposed method can overcome the problem of limited focal depth in the localization Tyber lithography, and can be used to fabricate the periodic array of frequency doubling, which can double the resolution of the Taibor lithography. In addition, by means of theoretical analysis and simulation, the defect repair effect of ultraviolet Taber lithography on one dimensional grating and two dimensional oblique periodic array with defects and its influencing factors are extended. The simulation results show that when the missing area is small and the missing unit is dispersed, Taber lithography combined with high contrast photolithography can recover the missing unit well, and when the missing area is large, the missing unit is concentrated. Taber lithography can not achieve mask defect repair.
【學(xué)位授予單位】：中國科學(xué)院大學(xué)(中國科學(xué)院光電技術(shù)研究所)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN23

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