發(fā)布時(shí)間：2019-03-05 18:51

【摘要】：隨著信息數(shù)據(jù)膨脹的加速發(fā)展,傳統(tǒng)的只利用電子電荷屬性的電子器件已經(jīng)無(wú)法滿足人們對(duì)元器件微型化、集成化等方面的迫切需求。因此,同時(shí)利用電子的電荷和自旋自由度來(lái)作為信息儲(chǔ)存和傳輸載體的新興學(xué)科——自旋電子學(xué)得到了科研工作者的廣泛關(guān)注,其中基于巨磁阻效應(yīng)(GMR)或隧穿磁電阻效應(yīng)(TMR)的自旋電子學(xué)讀頭已經(jīng)在信息存儲(chǔ)方面取得了非常成功的應(yīng)用。然而,這類元件數(shù)據(jù)的寫(xiě)入仍然需要通過(guò)外加磁場(chǎng)來(lái)實(shí)現(xiàn)。考慮到磁場(chǎng)作用范圍的非局域化特點(diǎn)和產(chǎn)生磁場(chǎng)所需的高能耗的缺點(diǎn),尋找超低能耗、精確局域化的非磁場(chǎng)有效控制就成為自旋電子學(xué)亟待研究解決的重要課題。多鐵性材料,由于其中電性和磁性的共存并且相互耦合,為利用非磁場(chǎng)的方式控制磁性提供了物理可能。此外,考慮多鐵性材料表界面處磁序非平庸的空間幾何分布,我們可以獲得額外的拓?fù)湫宰孕壍老嗷プ饔?同時(shí)由于在兩種材料界面處約束勢(shì)阱空間反射對(duì)稱性的破缺還會(huì)存在Rashba自旋軌道耦合,進(jìn)而通過(guò)對(duì)軌道角動(dòng)量的調(diào)制,我們也可以實(shí)現(xiàn)對(duì)材料磁性的非磁場(chǎng)控制。在本論文中,我們從理論上系統(tǒng)地研究了電場(chǎng)可調(diào)控的自旋軌道耦合(Rashba自旋軌道耦合和材料的磁拓?fù)湫再|(zhì)誘導(dǎo)的自旋軌道耦合)對(duì)存在磁電相互作用的多鐵性隧道結(jié)中輸運(yùn)性質(zhì)的影響,并進(jìn)一步討論了輸運(yùn)性質(zhì)關(guān)聯(lián)的多種物理效應(yīng):如自旋霍爾效應(yīng),反�；魻栃�(yīng)以及自旋弛豫之間的相互影響和調(diào)制。這些研究結(jié)果為未來(lái)基于自旋非磁調(diào)控的新型微納自旋電子學(xué)器件的研發(fā)提供了必要的理論支持和現(xiàn)實(shí)的指導(dǎo)價(jià)值。在第一章我們回顧了多鐵性系統(tǒng)的理論和實(shí)驗(yàn)方面的最新研究進(jìn)展并且闡明了研究多鐵性隧道結(jié)中磁電輸運(yùn)性質(zhì)的重要意義以及優(yōu)勢(shì)所在。第二章我們分別從唯象角度和微觀理論方面研究了界面處Rashba自旋軌道耦合和拓?fù)湫宰孕壍礼詈蠈?duì)多鐵性隧道結(jié)中隧穿各向異性磁電阻效應(yīng)的影響。由于這兩項(xiàng)自旋軌道耦合的強(qiáng)度可以通過(guò)外電場(chǎng)來(lái)調(diào)控,因此最終隧穿磁電阻的各向異性大小是電場(chǎng)可控的。此外,磁電阻各向異性的幅度與之前已有結(jié)果相比也明顯提高一個(gè)量級(jí),這項(xiàng)研究對(duì)于未來(lái)生產(chǎn)多態(tài)數(shù)據(jù)存儲(chǔ)器件提供了必要的理論指導(dǎo)。緊接著我們?cè)诘谌绿接懥硕噼F性隧道結(jié)中的Seebeck和spin Seebeck效應(yīng)。發(fā)現(xiàn)自旋軌道耦合的存在使得系統(tǒng)的熱電系數(shù)表現(xiàn)出磁化方向依賴的各向異性,并且通過(guò)進(jìn)一步計(jì)算可以得出系統(tǒng)具有比較高的品質(zhì)因子(1),因此該結(jié)構(gòu)有望被應(yīng)用于生產(chǎn)高效率的熱電和熱自旋器件中。考慮到鐵電/鐵磁異質(zhì)結(jié)界面處可能的磁電相互作用,在第四章我們研究了磁電效應(yīng)對(duì)正常金屬/鐵電/鐵磁隧道結(jié)的鐵磁層中磁性耗散的影響。發(fā)現(xiàn)自旋軌道耦合的存在導(dǎo)致Gillbert阻尼呈現(xiàn)出C2v二重對(duì)稱性,并且在鐵電極化方向發(fā)生翻轉(zhuǎn)時(shí),Gillbert阻尼值的大小也會(huì)發(fā)生改變。第五章我們?cè)诓豢紤]任何雜質(zhì)效應(yīng)的前提下,分別研究了兩種不同多鐵性隧道結(jié)中內(nèi)稟的自旋軌道耦合對(duì)隧穿自旋霍爾效應(yīng)和反�；魻栃�(yīng)的影響。最后一章我們對(duì)所有研究?jī)?nèi)容進(jìn)行了總結(jié)并對(duì)下一步工作作出了展望。
[Abstract]:With the rapid development of the expansion of the information data, the traditional electronic device using the electronic charge property has not been able to meet the urgent need of the miniaturization and integration of the components. Therefore, at the same time, the electronic charge and the spin degree of freedom are used as the subject _ spin electronics of the information storage and transmission carrier to be widely concerned by the scientific research workers, In which a spin-electronics read head based on a giant magnetoresistive effect (gmr) or a tunneling magnetoresistance effect (tmr) has made a very successful application in information storage. However, writing of such element data still needs to be achieved by the addition of a magnetic field. In view of the non-localized characteristics of the magnetic field and the disadvantage of the high energy consumption required to generate the magnetic field, it is an important task to find the ultra-low energy consumption and the accurate localization of the non-magnetic field effective control. The multiferroic material is physically possible to control the magnetic properties in a non-magnetic field due to the coexistence and mutual coupling of electrical and magnetic properties. in addition, taking into account that non-ordinary spatial geometric distribution of the magnetic sequence at the interface of the multi-layer material, we can obtain additional topological spin-orbit interaction; at the same time, the Rashba spin-orbit coupling can exist due to the defect that the space reflection symmetry of the potential well is constrained at the interface of the two materials, Furthermore, by the modulation of the orbital angular momentum, we can also realize the non-magnetic field control of the magnetic properties of the material. In this paper, we have systematically studied the effect of the electric field-controlled spin-orbit coupling (spin-orbit coupling induced by the magnetic topological properties of the Rashba spin-track coupling and the material) on the transport properties of the multi-layer tunnel junction in which the magnetoelectric interaction exists, And further discusses the various physical effects associated with the transport properties, such as spin hall effect, abnormal hall effect and the interaction and modulation between spin relaxation. The results of these studies provide the necessary theoretical support and practical guidance value for the development of a new micro-nano-spin electronic device based on spin-non-magnetic control. In the first chapter, we review the latest research progress in the theory and experiment of the multi-channel system, and clarify the important significance and the advantage of the study of the magnetoelectric transport property in the multi-channel tunnel junction. In the second chapter, we study the effect of the Rashba spin-orbit coupling and the topological spin-orbit coupling on the tunneling anisotropic magnetoresistance effect in the multi-tunnel junction from the phenomenological angle and the micro-theory. Since the strength of the two spin-orbit coupling can be regulated by the external electric field, the anisotropic size of the final tunneling magnetic resistance is controllable by the electric field. In addition, the amplitude of the anisotropy of the magnetic resistance is obviously improved by a magnitude as compared with the prior art, which provides the necessary theoretical guidance for future production of the multi-state data memory device. Then we discussed the Seebeck and the spin Seebeck effect in the multi-tunnel junction in the third chapter. the presence of a spin-orbit coupling is found such that the thermoelectric coefficients of the system exhibit the anisotropy of the magnetization direction dependence and, by further calculation, the system has a relatively high quality factor (1), The structure is therefore expected to be applied to the production of high-efficiency thermoelectric and thermal spin devices. In the fourth chapter we study the effect of magnetoelectric effect on the magnetic dissipation in the ferromagnetic layer of the normal metal/ ferroelectric/ ferromagnetic tunnel junction, taking into account the possible magnetoelectric interaction at the ferroelectric/ ferromagnetic heterojunction interface. It was found that the presence of the spin-orbit coupling resulted in the Gillbert damping exhibiting a C2v double symmetry and the magnitude of the Gillbert damping value also changed when the direction of the ferroelectric polarization was reversed. In the fifth chapter, we studied the effect of the spin-orbit coupling on the tunneling spin-Hall effect and the abnormal Hall effect on the premise of not considering any impurity effect. In the last chapter, we sum up all the research contents and look forward to the next work.
【學(xué)位授予單位】：蘭州大學(xué)
【學(xué)位級(jí)別】：博士
【學(xué)位授予年份】：2017
【分類號(hào)】：O469

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