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光注入及光電反饋垂直腔面發(fā)射激光器的非線性動(dòng)力學(xué)特性研究

發(fā)布時(shí)間:2018-01-09 21:47

  本文關(guān)鍵詞:光注入及光電反饋垂直腔面發(fā)射激光器的非線性動(dòng)力學(xué)特性研究 出處:《西南大學(xué)》2017年博士論文 論文類型:學(xué)位論文


  更多相關(guān)文章: 垂直腔面發(fā)射激光器 光注入 光電反饋 非線性動(dòng)力學(xué) 偏振開關(guān)和雙穩(wěn)


【摘要】:垂直腔面發(fā)射激光器(Vertical-cavity surface-emitting laser,VCSEL)是一種垂直表面發(fā)光的新型半導(dǎo)體激光器,結(jié)構(gòu)和制作工藝的不同導(dǎo)致VCSEL具有閾值電流低、光纖耦合效率高、動(dòng)態(tài)單縱模工作、制作成本低廉以及易于集成高密度二維陣列等獨(dú)特的優(yōu)勢(shì),其有望在光通信、光信息處理、并行光互連等重要應(yīng)用領(lǐng)域取代常規(guī)的邊發(fā)射型半導(dǎo)體激光器(Edge-emitting laser,EEL)。近年來的研究表明,在合適的光擾動(dòng)或電擾動(dòng)下,VCSEL可以呈現(xiàn)出周期性脈沖、鎖頻、倍周期脈沖以及混沌脈沖等豐富多樣的非線性動(dòng)力學(xué)態(tài);并且,VCSEL有源區(qū)對(duì)稱的結(jié)構(gòu)和增益介質(zhì)弱的各向異性使其輸出的偏振特性非常復(fù)雜,外部的光擾動(dòng)或電擾動(dòng)會(huì)導(dǎo)致VCSEL出現(xiàn)偏振轉(zhuǎn)換(Polarization switching,PS)和偏振雙穩(wěn)(Polarization bistability,PB)這兩種特殊的偏振動(dòng)力學(xué)狀態(tài)。當(dāng)前,圍繞這些偏振動(dòng)力學(xué)特性的研究不僅為VCSEL在全光開關(guān)、全光存儲(chǔ)以及全光信息轉(zhuǎn)換等相關(guān)技術(shù)領(lǐng)域的應(yīng)用開辟了新的途徑,而且對(duì)理解這些系統(tǒng)中非線性動(dòng)力學(xué)態(tài)的產(chǎn)生和演化規(guī)律以及改善基于此類激光器器件的系統(tǒng)性能都具有非常重要的現(xiàn)實(shí)意義。基于此,本論文對(duì)VCSEL在光注入及光電反饋條件下的非線性動(dòng)力學(xué)和偏振特性開展了理論和實(shí)驗(yàn)的研究,旨在深入剖析不同擾動(dòng)環(huán)境下VCSEL系統(tǒng)所呈現(xiàn)的各類靜態(tài)和動(dòng)態(tài)特性,揭示這些復(fù)雜現(xiàn)象的外在表現(xiàn)形式和內(nèi)在物理機(jī)制,并探尋VCSEL產(chǎn)生的非線性動(dòng)力學(xué)、PS和PB的控制措施。主要研究?jī)?nèi)容及結(jié)論如下:1.基于VCSEL自旋反轉(zhuǎn)模型,數(shù)值分析了正交光注入下VCSEL的非線性動(dòng)力學(xué)特性。揭示了VCSEL兩個(gè)正交偏振模式的非線性動(dòng)力學(xué)態(tài)在不同注入條件下的產(chǎn)生及演化規(guī)律,確定了激光器在注入?yún)?shù)空間內(nèi)的非線性動(dòng)力學(xué)狀態(tài)分布。數(shù)值模擬分析表明,激光器在合適的注入條件下可呈現(xiàn)強(qiáng)度誘導(dǎo)的PS效應(yīng),并且發(fā)生PS的參數(shù)區(qū)域往往伴隨著兩個(gè)模式之間的競(jìng)爭(zhēng)或耦合。在注入?yún)?shù)空間內(nèi),不同偏置電流情況下VCSEL出現(xiàn)PS效應(yīng)時(shí)所需的注入強(qiáng)度及輸出動(dòng)力學(xué)態(tài)特性均存在較大差異,系統(tǒng)可以通過合理地調(diào)節(jié)偏置電流、注入強(qiáng)度以及頻率失諧等參量來有效控制VCSEL輸出的非線性動(dòng)力學(xué)狀態(tài)。此外,提出了一種基于混沌光注入的主副VCSELs混沌系統(tǒng),并對(duì)該系統(tǒng)產(chǎn)生混沌信號(hào)的帶寬和復(fù)雜性演化進(jìn)行數(shù)值分析。理論的分析表明,在正負(fù)頻率失諧較大的區(qū)域,較大的注入強(qiáng)度有助于提高系統(tǒng)輸出的兩個(gè)偏振模式的混沌帶寬;適當(dāng)?shù)姆答伜妥⑷霔l件可使系統(tǒng)輸出混沌信號(hào)的復(fù)雜度顯著提高,且其與寬帶寬的混沌參數(shù)區(qū)域具有較大重合,在該參數(shù)重合區(qū)域,系統(tǒng)可輸出具有寬帶寬、高復(fù)雜度的混沌信號(hào)。2.理論研究了正交光注入1550 nm-VCSEL中強(qiáng)度誘導(dǎo)PS和PB產(chǎn)生的物理機(jī)理及其演化規(guī)律。結(jié)果表明,vcsel所呈現(xiàn)的偏振特性都與注入強(qiáng)度變化的路徑緊密相關(guān),系統(tǒng)在特定參數(shù)條件下可產(chǎn)生兩種不同類型的強(qiáng)度誘導(dǎo)的pb效應(yīng)。通過研究vcsel兩個(gè)正交偏振模式沿不同注入路徑時(shí)的非線性動(dòng)力學(xué)狀態(tài)的變化,揭示了系統(tǒng)在不同頻率失諧情況下正/反向ps以及對(duì)應(yīng)pb的變化規(guī)律。進(jìn)一步的研究還表明,在偏置電流較小時(shí),系統(tǒng)僅在較大的頻率失諧區(qū)域出現(xiàn)pb效應(yīng),其寬度在正負(fù)失諧區(qū)呈現(xiàn)不同的變化趨勢(shì);而當(dāng)偏置電流較大時(shí),系統(tǒng)在較大失諧區(qū)域的pb寬度的變化與小電流情形類似,但在較小失諧區(qū)域,系統(tǒng)可產(chǎn)生無反向偏振開關(guān)的pb現(xiàn)象。根據(jù)系統(tǒng)產(chǎn)生pb的物理?xiàng)l件,詳細(xì)分析了偏置電流和頻率失諧參量空間內(nèi)出現(xiàn)兩類pb效應(yīng)的分布情況。另外,考慮到可變偏振光注入具有更為豐富和靈活的擾動(dòng)特點(diǎn),搭建了可變偏振光注入1550nm-vcsel的實(shí)驗(yàn)系統(tǒng),充分研究了注入光偏振角對(duì)強(qiáng)度及頻率誘導(dǎo)pb特性的影響。研究表明,系統(tǒng)在特定的注入?yún)?shù)條件下存在著強(qiáng)度誘導(dǎo)pb效應(yīng)的臨界注入光偏振角,且此臨界角度隨頻率失諧的增加而增大,在適當(dāng)?shù)膮?shù)范圍內(nèi),更小的注入光偏振角度和更大的注入電流均有助于增加pb寬度;對(duì)于頻率誘導(dǎo)的pb現(xiàn)象,注入光偏振角的變化對(duì)pb寬度也有著較大的影響。此外,通過正向及反向掃描注入光偏振角,可觀察到偏振角度誘導(dǎo)的pb效應(yīng),對(duì)應(yīng)的pb寬度與注入強(qiáng)度、頻率失諧以及偏置電流均密切相關(guān)。通過合理選擇注入光偏振角度和其它可控參量,系統(tǒng)可實(shí)現(xiàn)對(duì)不同類型pb的靈活調(diào)控。3.搭建了光電負(fù)反饋1550nm-vcsel的實(shí)驗(yàn)系統(tǒng),對(duì)系統(tǒng)輸出的非線性動(dòng)力學(xué)特性進(jìn)行了研究。研究發(fā)現(xiàn)光電反饋強(qiáng)度及偏置電流都會(huì)對(duì)系統(tǒng)輸出的動(dòng)態(tài)特性產(chǎn)生顯著影響。在不同參數(shù)條件下,光電負(fù)反饋1550nm-vcsel可呈現(xiàn)規(guī)則脈沖態(tài)、準(zhǔn)周期態(tài)、混沌脈沖態(tài)等豐富的非線性動(dòng)力學(xué)行為。通過測(cè)定偏置電流和光電反饋強(qiáng)度參量空間內(nèi)的動(dòng)力學(xué)分布,可以發(fā)現(xiàn)激光器在較小偏置電流和弱光電反饋下主要工作在穩(wěn)定狀態(tài),隨著偏置電流的增加,激光器的輸出通常會(huì)隨反饋強(qiáng)度的增加以規(guī)則脈沖態(tài)-準(zhǔn)周期態(tài)-規(guī)則脈沖態(tài)的方式循環(huán)演化,直到系統(tǒng)能夠進(jìn)入混沌狀態(tài);當(dāng)偏置電流增加到一定值后,激光器輸出的動(dòng)力學(xué)態(tài)隨反饋強(qiáng)度的增加則主要以規(guī)則脈沖態(tài)-準(zhǔn)周期態(tài)-混沌脈沖態(tài)的方式循環(huán)演化。多種外部擾動(dòng)下,vcsel的非線性動(dòng)力學(xué)狀態(tài)會(huì)更加豐富,其在參數(shù)空間范圍可產(chǎn)生不同于單擾動(dòng)時(shí)的動(dòng)態(tài)特征分布,如何實(shí)現(xiàn)動(dòng)力學(xué)行為的有效控制成為該類器件能否實(shí)際應(yīng)用的關(guān)鍵;诖,我們實(shí)驗(yàn)研究光電負(fù)反饋和正交光注入共同擾動(dòng)下1550nm-vcsel的非線性動(dòng)力學(xué)特性,發(fā)現(xiàn)混合擾動(dòng)增加了系統(tǒng)的自由度,使vcsel輸出的非線性動(dòng)力學(xué)態(tài)相比于單一注入情況有更為復(fù)雜的變化規(guī)律。對(duì)于確定的注入條件,光電反饋強(qiáng)度的增加可導(dǎo)致系統(tǒng)輸出準(zhǔn)周期態(tài)和混沌態(tài)的參數(shù)區(qū)域逐漸增大,而發(fā)生單周期振蕩和注入鎖定的參數(shù)區(qū)域會(huì)逐漸減小,同時(shí)偏振模式發(fā)生PS時(shí)所需的注入強(qiáng)度也隨之發(fā)生明顯的變化。通過合理的調(diào)節(jié)系統(tǒng)擾動(dòng)參量,VCSEL可實(shí)現(xiàn)豐富可控的非線性動(dòng)力學(xué)態(tài)輸出。4.基于光電負(fù)反饋1550 nm-VCSEL實(shí)驗(yàn)系統(tǒng),詳細(xì)研究了偏置電流誘導(dǎo)及光電反饋誘導(dǎo)產(chǎn)生的動(dòng)力學(xué)態(tài)雙穩(wěn)的物理機(jī)理及其演化規(guī)律。分析表明,當(dāng)偏置電流或光電反饋強(qiáng)度沿不同路徑變化時(shí),由于系統(tǒng)初始條件的不同,VCSEL輸出的非線性動(dòng)力學(xué)狀態(tài)的變化規(guī)律并不完全一致,其可能在確定系統(tǒng)參數(shù)條件下呈現(xiàn)兩種不同的動(dòng)力學(xué)態(tài)輸出行為,進(jìn)而產(chǎn)生電流誘導(dǎo)或光電反饋誘導(dǎo)的動(dòng)力學(xué)態(tài)雙穩(wěn)現(xiàn)象,此類態(tài)雙穩(wěn)的出現(xiàn)決定于VCSEL內(nèi)部的非線性效應(yīng)及其輸出動(dòng)力學(xué)狀態(tài)對(duì)初始條件的高度敏感性。進(jìn)一步的研究確定了電流或反饋誘導(dǎo)的動(dòng)力學(xué)態(tài)雙穩(wěn)所需的參量范圍,并且系統(tǒng)動(dòng)力學(xué)態(tài)雙穩(wěn)的演化規(guī)律可由其輸出動(dòng)力學(xué)態(tài)的復(fù)雜性特征來清晰的表征。
[Abstract]:Vertical cavity surface emitting laser (Vertical-cavity surface-emitting laser, VCSEL) is a new type of semiconductor laser vertical surface emitting, structure and manufacturing process are different because VCSEL has a low threshold current, high fiber coupling efficiency, dynamic single longitudinal mode operation, low production cost and easy integration of advantages of high density two-dimensional arrays, which is expected to in optical communication, optical information processing, parallel optical interconnection and other important applications to replace the conventional edge emitting semiconductor lasers (Edge-emitting, laser, EEL). Recent studies show that in the proper light disturbance or electrical disturbance, VCSEL can exhibit periodic pulse frequency, pulse cycle times and chaotic pulse rich a variety of nonlinear dynamic state; and the anisotropic structure and gain medium VCSEL active region symmetric weak polarization characteristics make its output is very complex, external Light disturbance or electrical disturbances will lead to VCSEL (Polarization switching, PS polarization conversion) and polarization bistability (Polarization bistability, PB) of the two special polarization dynamics. At present, the research on these polarization dynamics not only for VCSEL in all-optical switching, opens a new way to application of optical storage and optical information conversion and other related technologies, and to understand the emergence and evolution of nonlinear dynamics in these systems and improve the system performance of such devices based on laser has very important practical significance. Based on this, this paper carried out theoretical and Experimental Research on VCSEL optical injection and photoelectric feedback under the condition of nonlinear dynamics and the polarization characteristics, aims to analyze the various types of static and dynamic characteristic of VCSEL system under the different disturbance, reveal the complex phenomenon The external form and internal mechanisms, and explore the nonlinear dynamics of VCSEL, control measures of PS and PB. The main research contents and conclusions are as follows: 1. based on the VCSEL model of the spin flip, the numerical analysis of nonlinear dynamic characteristics under orthogonal optical injection of VCSEL. VCSEL revealed two orthogonal polarization modes of nonlinear dynamics in the state generation and evolution of different injection conditions, laser in nonlinear dynamic state distribution parameter space injection was determined. The numerical simulations show that the laser in the appropriate injection conditions can be PS effect intensity induced, parameter area and PS is often accompanied by the competition between two modes or in injection coupling. The parameter space, the injection strength and output dynamics characteristics required for different bias current situation VCSEL PS effect when there are differences, the Department of The system can reasonably adjust the bias current, the nonlinear dynamic state injection strength and frequency detuning parameters to control the output of VCSEL. In addition, a vice principal of VCSELs chaotic system based on chaotic optical injection, and the bandwidth and complexity of chaotic signal evolution of the numerical analysis of the system. The theoretical analysis shows that in regions with large detuning, negative frequency, large injection intensity is helpful to improve the system's output of two polarization modes of the chaotic bandwidth; appropriate feedback and injection conditions can make the system output chaotic signal complexity is significantly improved, and the chaotic parameter region wide bandwidth and has a large overlap, in this parameter the overlap region, the system can output with wide bandwidth, high complexity of chaotic signal.2. theory to study the physical mechanism of orthogonal optical injection strength induced by PS and PB in nm-VCSEL and 1550 The law of evolution. The results show that the polarization properties of VCSEL presented are closely related with the path into the intensity variation of the system can produce Pb effect induced by two different types of strength under certain parameter conditions. Through the study of VCSEL two orthogonal polarization mode changes into nonlinear dynamics state along different paths when the reveals the system in different frequency detuning case positive / reverse PS and the corresponding changes in Pb. Further research showed that, in the low bias current, the system only detuning region Pb effect in a wide frequency, the width of the positive and negative detuning region showed different trend; and when the bias current is high. The system changes in a large detuning region of Pb and the width of the small current situation is similar, but smaller detuning region in Pb, the system can produce the phenomenon of no reverse polarization switching. According to the physical conditions of the Pb system, A detailed analysis of the bias current and the frequency distribution of two kinds of Pb effect in harmonic parameter space. In addition, taking into account the variable optical injection has more disturbance characteristics of rich and flexible, set up the experiment system of variable polarized 1550nm-vcsel injection, the full study of the influence of injection angle on light polarization intensity and frequency characteristics induced by Pb the system in particular. The study shows that the injection parameters exist under conditions of Pb effect critical injection intensity induced polarization angle, and increase the critical angle with the frequency detuning increasing, in the appropriate range of parameters, smaller injection light polarization angle and larger injection current are helpful to increase the width of Pb for Pb; frequency induction phenomenon, into the change of the polarization angle also has great influence on the width of the Pb. In addition, the forward and backward scanning into the polarization angle, the polarization angle can be observed by Effect of Pb mediated, and the injection strength corresponding to Pb width, frequency detuning and bias current are closely related. The polarization angle and other parameters controlled by reasonable selection of injection system can achieve flexible control of the different types of Pb.3. to build the optoelectronic negative feedback 1550nm-vcsel experimental system, the nonlinear dynamic characteristics of the system output a research found that photoelectric feedback intensity and bias current are the dynamic characteristics of the system output significantly. Under different conditions, the optoelectronic negative feedback 1550nm-vcsel can present regular pulse state, quasi periodic state, nonlinear dynamics of chaotic pulse state rich. By measuring the bias current and the intensity distribution of optoelectronic feedback dynamics the parameter space, can be found mainly in the small laser bias current and weak photoelectric feedback in the steady state, with the bias current Increase the output of the laser pulse will usually increase the evolution rules of state - quasi periodic state rules state cycles with feedback pulse intensity, until the system can enter a chaotic state; when the bias current increases to a certain value, the dynamic state of laser output with increasing the feedback intensity is mainly to state quasi regular pulse evolution periodic state to chaotic pulse state way cycle. A variety of external disturbances, nonlinear dynamic state of VCSEL will be more abundant, the parameter space can produce dynamic distribution characteristics different from the single disturbance, how to realize the effective control of the dynamic mechanical behavior of this kind of device can become the key to practical application. Based on this, we experiment study on optoelectronic feedback and optical injection of common orthogonal nonlinear perturbation of the dynamic characteristics of 1550nm-vcsel, found that the mixed disturbance increases the degree of freedom, so that the output of non VCSEL Linear dynamic state compared to the single injection is more complicated. To determine the changes of injection conditions, increase the strength of optoelectronic feedback can lead to parameters of regional system output quasi periodic and chaotic state is gradually increased, and single periodic oscillation and the injection parameters of regional lock will gradually decrease, at the same time required for polarization mode the occurrence of PS injection strength will be changed. By adjusting the system parameters perturbation, VCSEL.4. can realize the nonlinear dynamic state output rich controllable optoelectronic negative feedback 1550 nm-VCSEL experimental system based on a detailed study of the physical mechanism of bistable state dynamics and the evolution law of the bias current induced and photoelectric feedback induced. The analysis shows that when the bias current or optoelectronic feedback strength along different path changes, because of the initial condition of the system, the output of the nonlinear VCSEL Dynamics of the state is not entirely consistent, it may present two different dynamic state output parameters are determined under the condition of system behavior, and generate an electric current induced or optoelectronic feedback dynamics induced bistability, high sensitivity of such state bistability depends on the VCSEL internal nonlinear effect and dynamic state of the initial output conditions. Further research to determine the current state feedback or dynamics induced bistable parameters required for the characterization of clear evolution and system dynamic state bistability by the output dynamics of complex features.

【學(xué)位授予單位】:西南大學(xué)
【學(xué)位級(jí)別】:博士
【學(xué)位授予年份】:2017
【分類號(hào)】:TN248

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3 ;850 nm Implant-confined VCSEL Temperature Characteristics[J];Semiconductor Photonics and Technology;2004年01期

4 李林,鐘景昌,張永明,蘇偉,趙英杰,晏長(zhǎng)嶺,郝永琴,姜曉光;Oxide-apertured VCSEL with short period superlattice[J];Chinese Optics Letters;2004年12期

5 ;Rate-equation-based VCSEL thermal model and simulation[J];Journal of Zhejiang University Science A(Science in Engineering);2006年12期

6 Fumio Koyama;;New functions of VCSEL-based optical devices Invited Paper[J];Chinese Optics Letters;2008年10期

7 程奇;發(fā)射波長(zhǎng)為1.6μm的VCSEL適于批量生產(chǎn)[J];光電子技術(shù)與信息;2000年06期

8 張勁松,曹明翠,陳濤,譚偉;VCSEL技術(shù)與并行光互聯(lián)[J];光通信研究;2002年06期

9 陳弘達(dá),申榮鉉,毛陸虹,唐君,梁琨,杜云,黃永箴,吳榮漢,馮軍,柯錫明,劉歡艷,王志功;16信道0.35μmCMOS/VCSEL光發(fā)射模塊(英文)[J];半導(dǎo)體學(xué)報(bào);2003年03期

10 趙鼎,林世鳴;確定VCSEL電勢(shì)及載流子自洽分布算法的研究[J];半導(dǎo)體學(xué)報(bào);2003年10期

相關(guān)會(huì)議論文 前10條

1 陳光秒;陳軍;葛劍虹;朱小平;;垂直腔面發(fā)射激光器(VCSEL)在自由空間通信中的應(yīng)用研究[A];大珩先生九十華誕文集暨中國(guó)光學(xué)學(xué)會(huì)2004年學(xué)術(shù)大會(huì)論文集[C];2004年

2 桂華僑;黃偉;汪洪波;呂亮;謝建平;趙天鵬;許立新;吳云霞;明海;;聚合物光纖傳光的VCSEL自混合測(cè)振系統(tǒng)特性研究[A];光子科技創(chuàng)新與產(chǎn)業(yè)化——長(zhǎng)三角光子科技創(chuàng)新論壇暨2006年安徽博士科技論壇論文集[C];2006年

3 韶海鈴;王榮;;新一代光通信激光管VCSEL[A];2005通信理論與技術(shù)新進(jìn)展——第十屆全國(guó)青年通信學(xué)術(shù)會(huì)議論文集[C];2005年

4 謝志國(guó);鄭榮升;林開群;閻杰;張永生;;基于可見光VCSEL的聚合物光纖高速信號(hào)傳輸[A];光子科技創(chuàng)新與產(chǎn)業(yè)化——長(zhǎng)三角光子科技創(chuàng)新論壇暨2006年安徽博士科技論壇論文集[C];2006年

5 ;A Proposal of Integrated RSNOM-RW Scanning Head Array for Ultrahigh Density and Ultrahigh Rate Optical Memory with VCSEL-Tip[A];2003年納米和表面科學(xué)與技術(shù)全國(guó)會(huì)議論文摘要集[C];2003年

6 丁松鶴;馬玲;趙俊;;高精度VCSEL激光器自動(dòng)溫控系統(tǒng)設(shè)計(jì)[A];中國(guó)空間科學(xué)學(xué)會(huì)空間探測(cè)專業(yè)委員會(huì)第二十六屆全國(guó)空間探測(cè)學(xué)術(shù)研討會(huì)會(huì)議論文集[C];2013年

7 劉杰;高劍剛;李玉權(quán);;VCSEL技術(shù)及其在光互連中的應(yīng)用[A];全國(guó)第十二次光纖通信暨第十三屆集成光學(xué)學(xué)術(shù)會(huì)議論文集[C];2005年

8 ;Crosstalk analysis of 4×48 parallel optical interconnect system based on VCSEL/CMOS optoelectronic chip and 2-D optical fiber data link[A];湖北省激光學(xué)會(huì)論文集[C];2000年

9 王科;鄭婉華;張冶金;任剛;杜曉宇;邢名欣;陳良惠;;光子晶體垂直腔面發(fā)射激光器的模式分析[A];第十六屆全國(guó)半導(dǎo)體物理學(xué)術(shù)會(huì)議論文摘要集[C];2007年

10 Wei-Chou Hsu;Tsin-Dong Lee;Chih-Hung Chiou;;Single Mode InGaAs Photonic Crystal Vertical-Cavity Surface-Emitting Lasers emitting at 1170nm[A];Proceedings of the Eighth Chinese Optoelectronics Symposium[C];2006年

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1 周林;VCSEL影響網(wǎng)絡(luò)測(cè)試[N];中國(guó)計(jì)算機(jī)報(bào);2001年

2 記者 李雙藝 通訊員 李蓉;開發(fā)出百瓦級(jí)微型化高功率半導(dǎo)體激光模塊[N];吉林日?qǐng)?bào);2014年

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1 李秀山;垂直腔面發(fā)射激光器高階模式及偏振控制[D];中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所);2015年

2 尹毅;芯片原子鐘性能優(yōu)化實(shí)驗(yàn)研究[D];中國(guó)科學(xué)院大學(xué)(中國(guó)科學(xué)院武漢物理與數(shù)學(xué)研究所);2017年

3 陳建軍;光注入及光電反饋垂直腔面發(fā)射激光器的非線性動(dòng)力學(xué)特性研究[D];西南大學(xué);2017年

4 何德勇;單模VCSEL自混合激光多普勒測(cè)速研究[D];中國(guó)科學(xué)技術(shù)大學(xué);2008年

5 馬雅男;垂直腔面發(fā)射激光器的慢光特性研究[D];西南交通大學(xué);2013年

6 王偉;高功率垂直腔面發(fā)射激光器的偏振特性[D];中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所);2012年

7 徐軍;單模VCSEL自混合測(cè)速、測(cè)距及三維圖像技術(shù)的研究[D];中國(guó)科學(xué)技術(shù)大學(xué);2006年

8 劉迪;高功率垂直腔面發(fā)射激光器的熱行為特性[D];中國(guó)科學(xué)院研究生院(長(zhǎng)春光學(xué)精密機(jī)械與物理研究所);2012年

9 晏長(zhǎng)嶺;垂直腔面發(fā)射激光器的研制及其特性分析[D];中國(guó)科學(xué)院長(zhǎng)春光學(xué)精密機(jī)械與物理研究所;2000年

10 黃占超;長(zhǎng)波長(zhǎng)垂直腔面發(fā)射激光器材料與物理研究[D];中國(guó)科學(xué)院研究生院(上海微系統(tǒng)與信息技術(shù)研究所);2006年

相關(guān)碩士學(xué)位論文 前10條

1 劉慶喜;VCSEL混沌系統(tǒng)的時(shí)延隱藏與不可預(yù)測(cè)性研究[D];西南交通大學(xué);2015年

2 欒信信;高速850nm VCSEL的研制[D];北京工業(yè)大學(xué);2015年

3 李洪雨;單模表面浮雕結(jié)構(gòu)垂直腔面發(fā)射激光器的特性研究[D];長(zhǎng)春理工大學(xué);2014年

4 王文娟;基于表面等離子體的垂直腔面發(fā)射激光器的設(shè)計(jì)和研究[D];北京工業(yè)大學(xué);2015年

5 萬仁;120Gb/s CXP光收發(fā)模塊的研究[D];武漢郵電科學(xué)研究院;2014年

6 楊傳世;16Gb/s VCSEL驅(qū)動(dòng)器優(yōu)化設(shè)計(jì)[D];東南大學(xué);2015年

7 周元隆;65nm CMOS工藝22Gb/s VCSEL驅(qū)動(dòng)器電路設(shè)計(jì)[D];東南大學(xué);2015年

8 蔣國(guó)慶;基于耦合VCSEL陣列的光束操控研究[D];北京工業(yè)大學(xué);2016年

9 楊炳星;光脈沖注入下VCSEL的偏振開關(guān)特性研究[D];西南大學(xué);2009年

10 左亮;VCSEL刻蝕工藝研究[D];長(zhǎng)春理工大學(xué);2010年

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