本文選題：黑磷微米帶　切入點：生長機理　出處：《浙江大學》2017年博士論文　論文類型：學位論文

【摘要】：相對于零帶隙的石墨烯與寬帶隙的過渡金屬硫化物,黑磷是一種直接帶隙半導體且能帶寬度隨層數(shù)可調(diào)(塊體帶隙0.3eV,單層2.0eV),因其電學、光學及熱學性能呈現(xiàn)出面內(nèi)各向異性,近年來受到人們的廣泛關注,在半導體光電器件領域擁有廣闊的應用前景。高性能黑磷器件的開發(fā)與應用,離不開高質(zhì)量的黑磷單晶的可控制備。早期制備塊體單晶黑磷的方法,存在著高成本,低產(chǎn)率,原料不環(huán)保,制備過程耗時等缺點,而且黑磷單晶的生長機理還未明晰。鑒于此,在本文中我們系統(tǒng)研究了黑磷單晶的氣相輸運法生長,并揭示了其生長機理,初步研究了其電學性能。取得了以下創(chuàng)新性的研究成果:(1)可控生長高質(zhì)量單晶黑磷。我們分別發(fā)展了溫差法和恒溫法制備黑磷晶體,高質(zhì)量黑磷晶體的轉(zhuǎn)化率高達97%,成本大幅降低,生長效率大幅提升。(2)揭示了單晶黑磷的生長機理。通過系統(tǒng)研究單晶黑磷的生長過程,發(fā)現(xiàn)了黑磷微米帶的生長具有“自下而上”的行為。在生長過程中,紅磷升華形成磷蒸氣與金屬鹵化物形成P-Sn-I的成核點,磷在隨后的降溫過程中不斷析出并形成黑磷單晶。揭示了金屬Sn、Pb(或者它們的合金)以及I2在黑磷生長過程中的重要作用。另外我們發(fā)現(xiàn)黑磷的轉(zhuǎn)化率與磷蒸氣在低熔點金屬中的溶解度密切相關。(3)制作了基于多層黑磷的場效應晶體管并研究了其輸運性能。黑磷微米帶由于晶體沿著(0k0)的解理面堆疊,因此更容易采用機械剝離法獲得單層或多層黑磷薄膜,在此基礎上制作了場效應晶體管并研究了其電學性能。綜上所述,我們在黑磷晶體生長、單層或多層黑磷制備及器件制作等方面做出了較為系統(tǒng)的研究工作,而且黑磷薄膜的直接生長方面做了初步探索,相信為將來進一步研究黑磷薄膜的豐富物理性質(zhì)及其應用奠定了一定的基礎。
[Abstract]:Compared with graphene with zero band gap and transition metal sulfide with wide band gap, black phosphorus is a direct band gap semiconductor with tunable energy band width (bulk band gap 0.3 EV, single layer 2.0 EV, due to its electrical, optical and thermal properties showing internal anisotropy. In recent years, people pay more and more attention to the development and application of high performance black phosphorus devices, which are widely used in the field of semiconductor optoelectronic devices. The method of preparing bulk single crystal black phosphorus in the early stage has the disadvantages of high cost, low yield, unfriendly raw material, time consuming and so on. And the growth mechanism of black phosphorus single crystal is not clear. In view of this, we have systematically studied the vapor phase transport growth of black phosphorus single crystal and revealed its growth mechanism. The electrical properties of the crystal were preliminarily studied. The following innovative research results were obtained: 1) the controllable growth of high quality single crystal black phosphorus. We developed the temperature difference method and the constant temperature method to prepare the black phosphorus crystal. The conversion rate of high quality black phosphorus crystal is as high as 97%, the cost is greatly reduced, and the growth efficiency is greatly improved. The growth mechanism of single crystal black phosphorus is revealed. The growth process of single crystal black phosphorus is studied systematically. It is found that the growth of the black phosphorus micron band has a "bottom-up" behavior. During the growth process, the red phosphorus sublimates to form the nucleation point of P vapor and metal halide to form P-Sn-I. Phosphorus precipitates and forms black phosphorus single crystals during subsequent cooling process. The important role of metal SnPb (or their alloys) and I2 in the growth of black phosphorus is revealed. In addition, we find that the conversion of black phosphorus and phosphorus vapor in black phosphorus. The field effect transistors based on multilayer black phosphorus have been fabricated and their transport properties have been studied. The black phosphorus micron band is stacked along the cleavage surface of the crystal. Therefore, it is easier to obtain monolayer or multilayer black phosphorus thin films by mechanical stripping. Based on this, the field effect transistors are fabricated and their electrical properties are studied. The preparation of monolayer or multilayer black phosphorus and the fabrication of devices have been studied systematically, and the direct growth of black phosphorus thin films has been preliminarily explored. It is believed that it will lay a foundation for the further study of the rich physical properties and applications of black phosphorus films in the future.
【學位授予單位】：浙江大學
【學位級別】：博士
【學位授予年份】：2017
【分類號】：O613.62

【參考文獻】

相關期刊論文 前1條

1 LUO Kun;CHEN ShiYou;DUAN ChunGang;;Indirect-direct band gap transition of two-dimensional arsenic layered semiconductors—cousins of black phosphorus[J];Science China(Physics,Mechanics & Astronomy);2015年08期

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本文編號：1643249