【摘要】：高均勻性大尺寸激光晶體是全固態(tài)高功率激光發(fā)展的重要基礎(chǔ),而空間激光則需要發(fā)展具有抗輻射性能的高效激光晶體。Nd3+在GSAG的分凝系數(shù)約為YAG中的三倍,且熔點比YAG略低,有望制備出大尺寸高均勻性激光晶體元件,同時其與具有優(yōu)良抗輻照性能的Cr,Nd:GSGG結(jié)構(gòu)和性能類似,因而,論文選取Nd和Nd,Cr摻雜的GSAG作為研究對象,擬探索大尺寸高均勻性激光晶體和具有優(yōu)良抗輻射性能的激光晶體。主要研究內(nèi)容和結(jié)果如下:一、采用提拉法成功生長出了直徑為Φ30mm的Nd:GSAG晶體,測定了Nd3+在GSAG中的有效分凝系數(shù),通過Rietveld全譜擬合得到了結(jié)構(gòu)參數(shù),研究了 Nd:GSAG室溫下的吸收和發(fā)光。Nd3+在GSAG的有效分凝系數(shù)為0.53,最強吸收峰位于808.6nm處,吸收截面為3.44×10-20cm2,躍遷強度參數(shù)Ωt(t=2,4,6)為 0.263×10-20cm2、3.010×10-20cm2、3.648×10-20cm2;它的最強發(fā)射峰位于 1060nm處,1060nm、941.5nm 的發(fā)射截面分別為 6.32×10-20cm2、2.77×10-20cm2。相應(yīng)激光上能級4F3/2的壽命為258μs。用808nm連續(xù)半導(dǎo)體激光器(LD)作為泵浦源研究了 2mm×2mm×6mm的Nd:GSAG的1.06μm激光性能,其閾值為2.139W,斜效率為8.9%,最高輸出功率為0.462W,光-光轉(zhuǎn)換效率為5.12%。此外,還測定了 Nd:GSAG晶體在297K-748K范圍內(nèi)的熱擴散系數(shù),計算得到其熱導(dǎo)率從 4.51 W/(m · K)變化到 2.80W/(m · K)。二、在Nd:GSAG中摻入0.1at%的Cr3+,采用提拉法成功生長出了直徑為Φ30mm的光學(xué)質(zhì)量良好的Cr,Nd:GSAG晶體。最強吸收峰位于808.6nm處,吸收截面為3.38×10-20cm2。不計Cr,Nd:GSAG的吸收光譜中Nd3+和Cr3+重疊的吸收帶,擬合得到Cr,Nd:GSAG中Nd3+的強度參量Ωt(t=2,4,6)為0.380×10-20cm2、2.286×10-20cm2、3.306×10-20cm2;Cr,Nd:GSAG 最強發(fā)射峰位于 1060nm 處,在1060nm、941.5nm 的發(fā)射截面分別為 5.98×10-20cm2、2.60×10-20cm2,室溫下Cr,Nd:GSAG的4F3/2能級壽命為274μs。用808nm連續(xù)半導(dǎo)體激光器(LD)作為泵浦源研究了 2mm×2mm×6mm的Cr,Nd:GSAG的1.06μm激光性能,其閾值為1.233W,斜效率為6.73%,最高輸出功率為0.513W,光-光轉(zhuǎn)換效率為5.78%。三、利用60Co伽馬射線源對Nd:GSAG和Cr,Nd:GSAG進行了 2Mrad、1OMrad、20Mrad輻照劑量的輻照,對比測試了輻照與未輻照樣品的吸收、發(fā)光,表明這兩種晶體可能具有抗輻照性能,而摻雜Cr3+有利于增強Nd:GSAG的抗輻照性能。
[Abstract]:High uniformity and large size laser crystals are the important basis for the development of all-solid-state high-power lasers, while space lasers need to develop high-efficiency laser crystals with anti-radiation properties. The coagulation coefficient of Nd3 in GSAG is about three times that of YAG, and the melting point is slightly lower than that of YAG. It is expected that the large size and high uniformity laser crystal element will be prepared, and it is similar to the structure and performance of Cr,Nd:GSGG with excellent radiation resistance. Therefore, Nd and Nd,Cr doped GSAG are selected as the research objects in this paper. Large size and high uniformity laser crystals and laser crystals with excellent radiation resistance are to be explored. The main contents and results are as follows: firstly, Nd:GSAG crystals with diameter 桅 30mm have been successfully grown by Czochralski method, the effective coagulation coefficients of Nd3 in GSAG have been measured, and the structural parameters have been obtained by Rietveld full-spectrum fitting. The absorption and luminescence of Nd:GSAG at room temperature are studied. The effective segregation coefficient of Nd3 at room temperature is 0.53, the strongest absorption peak is at 808.6nm, the absorption cross section is 3.44 脳 10-20cm2, the transition intensity parameter 惟 t (ttm2m2c2c2c2c2c2n) is 3.010 脳 10-20cm2n 2, the strongest emission peak is at 1060nm, the emission cross section of 1060nmmnm941.5nm is 6.32 脳 10-20cm2.77 脳 10-20cm2cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2.77 脳 10-20cm2, respectively. The lifetime of the corresponding laser upper level 4F3/2 is 258 渭 s. The 808nm CW semiconductor laser (LD) is used as the pump source to study the 1.06 渭 m laser performance of 2mm 脳 2mm 脳 6mm Nd:GSAG. The threshold value is 2.139 W, the slope efficiency is 8.9 W, the maximum output power is 0.462 W, and the optical-optical conversion efficiency is 5.12 W. In addition, the thermal diffusivity of Nd:GSAG crystal in the range of 297K-748K was measured. The thermal conductivity of Nd:GSAG crystal changed from 4.51 W / (m K) to 2.80W/ (m K). Secondly, Cr,Nd:GSAG crystals with diameter 桅 30mm were successfully grown by Czochralski method with 0.1 at% Cr3 in Nd:GSAG. The strongest absorption peak is located at 808.6nm, and the absorption cross section is 3.38 脳 10 ~ (-20) cm ~ (2). Regardless of the overlapping absorption bands of Nd3 and Cr3 in the Cr,Nd:GSAG absorption spectra, the intensity parameter 惟 t (ttn2m2m2h2) of Nd3 in Cr,Nd:GSAG is 0.380 脳 10-20cm2n ~ (2) 2.286 脳 10 ~ (-20) cm ~ (2) C ~ (2 +) 3.306 脳 10 ~ (-20) cm _ (2) C _ (2) C ~ (2 +) emission peak is located at 1060nm, and the emission cross section at 1060 nm is 5.98 脳 10 ~ (-20) cm ~ (-2) ~ (2) (2.60 脳 10 ~ (-20) cm ~ (-2) respectively. The 4F3/2 lifetime of Cr,Nd:GSAG at room temperature is 274 渭 s ~ (-1). The 808nm CW semiconductor laser (LD) is used as the pump source to study the 1.06 渭 m laser performance of the Cr,Nd:GSAG of 2mm 脳 2mm 脳 6mm. The threshold value is 1.233 W, the slope efficiency is 6.73 W, the maximum output power is 0.513 W, and the optical-optical conversion efficiency is 5.78 W. (3) Nd:GSAG and Cr,Nd:GSAG were irradiated by 60Co gamma ray source. The absorption of irradiated and unirradiated samples was compared with that of unirradiated samples. The results showed that the two crystals may have the ability to resist irradiation. Doping Cr3 is beneficial to enhance the radiation resistance of Nd:GSAG.
【學(xué)位授予單位】：中國科學(xué)技術(shù)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：O734

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