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基于非線性材料的光子晶體邏輯門

發(fā)布時間:2018-01-24 07:44

  本文關鍵詞: 光子晶體 石墨烯 硅納米晶 邏輯門 出處:《深圳大學》2017年碩士論文 論文類型:學位論文


【摘要】:光電子器件和全光器件跟傳統(tǒng)的電子器件相比,有許多更優(yōu)良的特性,如更快的運算速度和更低的能耗,主要發(fā)展前景在于信息通信及處理領域,有利于未來復雜低能耗要求的模塊化和系統(tǒng)化集成。本文通過引入非線性材料石墨烯和硅納米晶,在二維光子晶體中構造合適的環(huán)形諧振腔,實現(xiàn)了性能優(yōu)異的全光邏輯門。本文提出的全光邏輯門以小尺寸的光子晶體為基礎,器件基于結構簡單常見的環(huán)形諧振器,邏輯響應十分優(yōu)異。本文以環(huán)形諧振腔為例子,引入了由H.A.Haus提出的時域耦合模理論,深入的分析了三端口系統(tǒng)中輸入場在波導和環(huán)形諧振腔之間的耦合機制。本文還系統(tǒng)的分析了諧振頻率、輸出端口透射率跟缺陷品質因子、非線性材料損耗和波導衰減率的關系。為了便于數(shù)字模擬,本文采用等效模型,用一等效層取代石墨烯及其附近的介質。光子晶體的能帶結構決定了器件的工作波段,在這里我們通過平面波展開法研究了器件的能帶結構。通過參數(shù)掃描,獲得較大禁帶的光子晶體,并且我們通過時域有限差分法分析了石墨烯材料的添加對光子晶體能帶的影響。光子晶體結構參數(shù)的選擇影響光子晶體光子禁帶位置和寬度,并且要得到合適的諧振模位置必須把石墨烯材料添加在光子晶體中的合適位置。通過前期掃描及優(yōu)化,我們設計了合適的光子晶體結構參數(shù),得到完整光子晶體的禁帶的歸一化頻率范圍為0.324-0.464。我們的邏輯器件基于環(huán)形諧振器,器件設置最佳工作波長為1.55?m,而光子晶體禁帶的中央歸一化頻率為0.394,與最佳工作波長相符。本研究中構造了基于包裹非線性石墨烯層介質柱波導光子晶體環(huán)形諧振腔的受控邏輯非門、開關,還構造了基于非線性石墨烯和硅納米晶材料的非線性非門、受控非門和受控或非門。本文根據(jù)石墨烯和硅納米晶的非線性效應,分析了全光開關和受控邏輯非門的邏輯響應,實現(xiàn)了回波損耗高以及消光系數(shù)高的優(yōu)異的邏輯器件。其中開關的消光比為36.8dB,最小回波損耗也有16.4dB,對于受控邏輯非門,消光系數(shù)達到了32.9dB。構造了多層石墨烯和硅納米晶為非線性材料的非門和受控非門,邏輯響應好以及消光系數(shù)高。非線性非門的關閉功率僅為62mW/?m,消光比為41dB。對于受控非門,消光比也有22.1dB;陔p環(huán)形諧振腔的受控或非門也表現(xiàn)出很好的邏輯響應。
[Abstract]:Compared with traditional electronic devices, optoelectronic devices and all-optical devices have many better characteristics, such as faster computing speed and lower energy consumption. The main development prospects are in the field of information communication and processing. This paper introduces the nonlinear materials graphene and silicon nanocrystals to construct an appropriate ring resonator in two-dimensional photonic crystals. An all-optical logic gate with excellent performance is implemented. The proposed all-optical logic gate is based on a small size photonic crystal and the device is based on a simple and common ring resonator. The logical response is very excellent. In this paper, the time-domain coupled mode theory proposed by H. A. Haus is introduced, taking the ring resonator as an example. The coupling mechanism of the input field between the waveguide and the ring resonator in the three-port system is analyzed in depth. The resonant frequency, the transmission of the output port and the defect quality factor are also analyzed systematically in this paper. The relationship between the loss of nonlinear materials and the attenuation rate of waveguides. In order to be convenient for digital simulation, an equivalent model is used in this paper. An equivalent layer is used to replace graphene and its surrounding medium. The band structure of photonic crystal determines the working band of the device. Here we study the energy band structure of the device by plane wave expansion method. Photonic crystals with large bandgap have been obtained. The influence of the addition of graphene on the photonic crystal band is analyzed by the finite-difference time-domain method, and the position and width of photonic band gap are affected by the choice of photonic crystal structure parameters. In order to obtain the appropriate resonant mode position, graphene materials must be added to the appropriate position of photonic crystal. Through the pre-scanning and optimization, we designed the appropriate parameters of photonic crystal structure. The normalized frequency range of bandgap for complete photonic crystals is 0.324-0.464.Our logic devices are based on ring resonators and the optimal operating wavelength is 1.55? And the central normalized frequency of photonic crystal bandgap is 0.394. In this study, a controlled logic gate and switch based on a photonic crystal ring resonator encased in a nonlinear graphene layer dielectric cylindrical waveguide has been constructed. The nonlinear nongate, controlled gate and controlled or ungate based on nonlinear graphene and silicon nanocrystalline materials are also constructed. In this paper, the nonlinear effects of graphene and silicon nanocrystalline are discussed. The logic response of all-optical switch and controlled logic gate is analyzed. The excellent logic devices with high echo loss and high extinction coefficient are realized, in which the extinction ratio of switch is 36.8 dB. The minimum echo loss is 16.4 dB, and the extinction coefficient is 32.9 dB for the controlled logic gate. The multilayer graphene and silicon nanocrystalline are the non-gate and the controlled gate for nonlinear materials. The logic response is good and the extinction coefficient is high. The closing power of the nonlinear non-gate is only 62 MW / r? M, extinction ratio is 41 dB. For controlled non-gate, extinction ratio is 22.1dB.The controlled or non-gate based on double ring resonator also shows good logical response.
【學位授予單位】:深圳大學
【學位級別】:碩士
【學位授予年份】:2017
【分類號】:O734;TN256

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