本文關(guān)鍵詞：1550 nm垂直腔面發(fā)射激光器自旋反轉(zhuǎn)模型中關(guān)鍵參量數(shù)值的實(shí)驗(yàn)測定和理論研究　出處：《西南大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 垂直腔面發(fā)射激光器 自旋反轉(zhuǎn)模型 光注入 混沌信號帶寬

【摘要】：半導(dǎo)體激光器(Semiconductor Lasers,SLs)作為光通信領(lǐng)域最重要的光源,憑借其獨(dú)特的優(yōu)點(diǎn)而得到飛速的發(fā)展。垂直腔面發(fā)射半導(dǎo)體激光器(Vertical-Cavity Surface-Emitting Lasers,VCSELs)具有體積小、閾值低、高調(diào)制效率、單縱模輸出等諸多優(yōu)勢,而受到廣泛的關(guān)注。近年來,短波長VCSELs的制作工藝較為成熟,工作性能較為穩(wěn)定,在近距離和中程距離光通信領(lǐng)域中被廣泛使用;長波長VCSELs的制作工藝也日臻完善,尤其是1550 nm VCSELs處在零色散、低損耗窗口位置,在長距離、大容量干線光纖通信領(lǐng)域具有較大潛能和應(yīng)用價值。故此,針對1550 nm VCSELs進(jìn)行系統(tǒng)性理論和實(shí)驗(yàn)研究就具有非常重要的意義。在1550nm VCSELs的理論分析工作中,自旋反轉(zhuǎn)模型(Spin-Flip Mode,SFM)是目前用于分析1550 nm VCSELs非線性動力學(xué)特性最常用的模型。在給定偏置電流的條件下,需提前給出模型中關(guān)鍵參量的數(shù)值,才能通過數(shù)值求解得到兩個偏振分量隨時間變化的序列,從而對其輸出的動力學(xué)特征進(jìn)行分析。故而這些參數(shù)的取值對1550nm VCSELs輸出的動力學(xué)特性具有較大的影響。因此,如何準(zhǔn)確測定這些參數(shù)是能否正確預(yù)測1550 nm VCSELs動力學(xué)特性的關(guān)鍵。本文基于自由運(yùn)行和平行光注入1550 nm VCSEL的輸出測量結(jié)果,對描述1550 nm VCSEL特性的SFM中關(guān)鍵參量(光場衰減速率k、總載流子衰減速率γN、線寬增強(qiáng)因子α、有源介質(zhì)雙折射速率γp、自旋反轉(zhuǎn)速率γs、有源介質(zhì)線性色散速率γa)的數(shù)值進(jìn)行了估計(jì)。通過實(shí)驗(yàn)測定1550 nm VCSEL的噪聲譜估計(jì)出光子壽命(τp)的值,考慮到弛豫振蕩衰減速率的增益飽和效應(yīng),對τp做出了修正,進(jìn)而根據(jù)k=1/(2τp)的關(guān)系求得k的值;根據(jù)1550 nm VCSEL的弛豫振蕩頻率與電泵浦參量二者間的關(guān)系,求得γN的值;利用平行光注入1550 nm VCSEL確定穩(wěn)定注入鎖定區(qū)霍普夫分岔所需的最小失諧頻率,粗略估計(jì)出α的值;根據(jù)實(shí)驗(yàn)測得的自由運(yùn)行的1550 nm VCSEL光譜中兩個偏振分量的頻率差值求得γp的值;利用γs和γp的關(guān)系,求得γs的值;通過分析求得γa的值;利用上述所得關(guān)鍵參量的數(shù)值進(jìn)行仿真,得到的動力學(xué)譜圖與實(shí)驗(yàn)測得的平行光注入1550 nm VCSEL的動力學(xué)圖譜進(jìn)行對比,對α值進(jìn)行了微調(diào)。為了進(jìn)一步證明得到的關(guān)鍵參量的數(shù)值的正確性,最后利用測定的關(guān)鍵參量仿真偏振光注入提高1550 nm VCSEL的混沌信號帶寬,仿真的結(jié)果與文獻(xiàn)實(shí)驗(yàn)結(jié)果進(jìn)行了對比,且二者能夠很好地吻合,最終說明測定得到的六個關(guān)鍵參量的數(shù)值是正確的,所用的測定方法是合理的。
[Abstract]:Semiconductor LasersSys (SLS) is the most important light source in the field of optical communication. Vertical-Cavity Surface-Emitting Lasers has been developed rapidly because of its unique advantages. VCSELs have many advantages, such as small volume, low threshold, high modulation efficiency, single longitudinal mode output and so on. In recent years, the fabrication technology of short wavelength VCSELs is more mature. The work performance is relatively stable and is widely used in the field of short and medium range optical communication. The fabrication technology of long wavelength VCSELs is also improving, especially 1550nm VCSELs is in the position of zero dispersion, low loss window and long distance. Large capacity trunk fiber communication field has great potential and application value. Systematic theoretical and experimental studies on 1550nm VCSELs are of great significance. In the theoretical analysis of 1550nm VCSELs. Spin-Flip Mode. SFM) is the most commonly used model to analyze the nonlinear dynamic characteristics of 1550nm VCSELs. Under the condition of given bias current, the numerical value of key parameters in the model should be given in advance. Only by numerical solution can we obtain two series of polarization components changing with time. Therefore, the value of these parameters has a great influence on the dynamic characteristics of 1550nm VCSELs output. How to accurately determine these parameters is the key to correctly predict the kinetic characteristics of 1550nm VCSELs. The output of VCSEL is measured. The key parameters (optical field attenuation rate k, total carrier attenuation rate 緯 N, linewidth enhancement factor 偽, birefringence rate 緯 p of active medium) in SFM describing 1550nm VCSEL characteristics are investigated. The spin inversion rate 緯 s and the linear dispersion rate 緯 a of the active medium are estimated. The photon lifetime (蟿 p) is estimated by measuring the noise spectrum of 1 550 nm VCSEL. Considering the gain saturation effect of relaxation oscillation attenuation rate, 蟿 p is modified and the value of k is obtained according to the relation of 1 / 2 蟿 p. According to the relationship between the relaxation oscillation frequency of 1550nm VCSEL and the pump parameter, the value of 緯 N is obtained. The minimum detuning frequency required for the Hopf bifurcation in the stable injection locking region is determined by using the parallel optical injection of 1550nm VCSEL, and the value of 偽 is roughly estimated. The value of 緯 p is obtained from the frequency difference of the two polarization components in the free-running 1550nm VCSEL spectrum measured experimentally. Using the relation between 緯 s and 緯 p, the value of 緯 s is obtained. The value of 緯 a is obtained by analysis. By using the numerical simulation of the above key parameters, the kinetic spectra obtained are compared with the kinetic spectra obtained by parallel light injection of 1550nm VCSEL. In order to further prove the correctness of the obtained key parameters, the 偽 value is fine-tuned. Finally, the chaotic signal bandwidth of 1550nm VCSEL is improved by using the measured key parameters, and the simulation results are compared with the experimental results, and the two results are in good agreement with each other. The results show that the values of the six key parameters are correct and the method is reasonable.
【學(xué)位授予單位】：西南大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN248

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 楊峰;唐曦;鐘祝強(qiáng);夏光瓊;吳正茂;;基于偏振旋轉(zhuǎn)耦合1550nm垂直腔面發(fā)射激光器環(huán)形系統(tǒng)產(chǎn)生多路高質(zhì)量混沌信號[J];物理學(xué)報(bào);2016年19期

2 陳俊;陳建軍;吳正茂;蔣波;夏光瓊;;可變偏振光注入下1550nm垂直腔面發(fā)射激光器的偏振開關(guān)及雙穩(wěn)特性[J];物理學(xué)報(bào);2016年16期

3 楊欣;陳建軍;吳正茂;夏光瓊;黃守文;鄧濤;;光電負(fù)反饋下1550nm垂直腔表面發(fā)射激光器的動力學(xué)特性[J];光子學(xué)報(bào);2016年08期

4 黃守文;陳建軍;夏光瓊;楊欣;吳正茂;;光電反饋1550nm垂直腔表面發(fā)射激光器偏振雙穩(wěn)特性[J];激光與光電子學(xué)進(jìn)展;2016年07期

5 何洋;鄧濤;邱海英;朱萬清;吳正茂;夏光瓊;;光電反饋下光注入VCSELs的動力學(xué)特性[J];光子學(xué)報(bào);2016年01期

6 王小發(fā);吳正茂;夏光瓊;;光反饋誘發(fā)長波長垂直腔面發(fā)射激光器低功耗偏振開關(guān)[J];物理學(xué)報(bào);2016年02期

7 陳建軍;夏光瓊;吳正茂;;Power-induced polarization switching and bistability characteristics in 1550-nm VCSELs subjected to orthogonal optical injection[J];Chinese Physics B;2015年02期

8 王小發(fā);李駿;;短外腔偏振旋轉(zhuǎn)光反饋下1550nm垂直腔面發(fā)射激光器的動力學(xué)特性研究[J];物理學(xué)報(bào);2014年01期

9 王小發(fā);;光電負(fù)反饋下垂直腔表面發(fā)射激光器偏振開關(guān)特性研究[J];物理學(xué)報(bào);2013年10期

10 陳興華;林曉東;吳正茂;樊利;曹體;夏光瓊;;基于偏振旋轉(zhuǎn)光反饋下的外光注入VCSEL產(chǎn)生高性能毫米波[J];物理學(xué)報(bào);2012年09期

相關(guān)博士學(xué)位論文 前1條

1 張祥偉;高功率垂直腔面發(fā)射激光器的偏振控制[D];中國科學(xué)院研究生院（長春光學(xué)精密機(jī)械與物理研究所）;2013年

相關(guān)碩士學(xué)位論文 前2條

1 邵夢姣;795nm垂直腔面發(fā)射激光器研究[D];浙江大學(xué);2014年

2 鄭安杰;光反饋?zhàn)饔孟?550nm-VCSELs的偏振轉(zhuǎn)換及非線性動力學(xué)特性研究[D];西南大學(xué);2013年

，

本文編號：1391838