本文關(guān)鍵詞：KrF激光輻照SOI熱效應(yīng)及在納米光波導(dǎo)光整加工中的應(yīng)用　出處：《中北大學(xué)》2017年碩士論文　論文類型：學(xué)位論文

  更多相關(guān)文章： 248 nm準(zhǔn)分子激光 SOI材料 有限元法 溫度場(chǎng) 納米光波導(dǎo)

【摘要】：絕緣體上硅(Silicon-on-insulator,SOI)材料因在微電子、光電子領(lǐng)域表現(xiàn)出的無(wú)與倫比的優(yōu)勢(shì)而成為微光機(jī)電系統(tǒng)的重要材料之一,其在光通信、光互聯(lián)計(jì)算、數(shù)字圖像處理以及軍事領(lǐng)域具有廣闊應(yīng)用前景。其中,基于SOI材料的納米光波導(dǎo)利用Si波導(dǎo)層與SiO2限制層大折射率差的優(yōu)勢(shì),具備了較強(qiáng)的局域光場(chǎng)能力,有望成為光量子通信的基本導(dǎo)波元件。目前,實(shí)現(xiàn)基于SOI材料器件的批量生產(chǎn)和低成本是先進(jìn)制造追求的目標(biāo)。紫外激光對(duì)微結(jié)構(gòu)的加工不僅具有高精度、可實(shí)現(xiàn)柔性生產(chǎn)等優(yōu)勢(shì),在SOI基光電子器件加工中因具有光斑尺寸小、吸收系數(shù)大、加工無(wú)需掩膜等優(yōu)點(diǎn)而獲得了廣泛應(yīng)用。特別地,采用紫外激光表面熔凝技術(shù)降低納米光波導(dǎo)側(cè)壁粗糙度,制造超低損耗納米光波導(dǎo)成為光通信、生化傳感、高靈敏探測(cè)等諸多領(lǐng)域發(fā)展的關(guān)鍵。本文基于激光與物質(zhì)相互作用基本機(jī)理和傳熱學(xué)理論,研究了KrF準(zhǔn)分子激光輻照SOI材料的熔融損傷閾值、汽化損傷閾值和溫度場(chǎng)分布規(guī)律,探討了KrF準(zhǔn)分子激光輻照SOI材料熱影響區(qū)域較小的特點(diǎn)和在微加工領(lǐng)域的應(yīng)用,同時(shí)對(duì)SOI材料的自加熱效應(yīng)進(jìn)行了分析;在此基礎(chǔ)上將KrF準(zhǔn)分子激光應(yīng)用于SOI納米光波導(dǎo)粗糙側(cè)壁的光整加工,并進(jìn)行了理論分析和有限元數(shù)值模擬,在獲得溫度場(chǎng)分布規(guī)律的基礎(chǔ)上,通過(guò)控制激光的工藝參數(shù),對(duì)波導(dǎo)熔池形貌進(jìn)行了精確控制,結(jié)合波導(dǎo)粗糙側(cè)壁光整加工的相關(guān)知識(shí),提出了新的工藝流程,優(yōu)化了工藝參數(shù)。為明確KrF準(zhǔn)分子激光輻照下SOI材料溫度場(chǎng)演化規(guī)律,考慮材料相變潛熱和較大范圍溫度變化對(duì)材料參數(shù)的影響,在分析激光能量的時(shí)間、空間分布的基礎(chǔ)上,建立了激光輻照下SOI材料的熱響應(yīng)模型;在不同能量密度激光作用下,得到SOI材料的熔融和汽化損傷閾值分別為0.362 J/cm2、1.285 J/cm2;材料溫度的徑向分布表明,納秒激光輻照下的高溫區(qū)域只存在于激光光斑一定范圍內(nèi),遠(yuǎn)離輻照區(qū)域溫度下降較快;軸向溫度分布表明,熱量多沉積在表面Si層而SiO2層溫度較低,這主要是由SiO2的熱導(dǎo)率遠(yuǎn)遠(yuǎn)小于表面單晶硅熱導(dǎo)率導(dǎo)致的。針對(duì)SOI納米光波導(dǎo)側(cè)壁較大的表面粗糙度引起的光傳輸散射損耗過(guò)大的問(wèn)題,利用有限元數(shù)值模擬了KrF準(zhǔn)分子激光對(duì)波導(dǎo)側(cè)壁的熔凝光整加工溫度場(chǎng),研究了波導(dǎo)側(cè)壁熔池溫度場(chǎng)的演化規(guī)律,優(yōu)化了工藝參數(shù)。結(jié)果表明,熔池形成于波導(dǎo)上表面與迎光側(cè)壁夾角處;激光入射角度一定時(shí),熔池熔深與平均能量密度正相關(guān);熔池形貌受控于激光入射角度:隨著入射角度的減小,熔池形貌由單邊U形過(guò)渡為單邊V形最終呈帶鈍角單邊V形。分析表明,較大激光入射角對(duì)應(yīng)的熔池形貌更有利于波導(dǎo)側(cè)壁的光整加工;據(jù)此提出先確定激光入射角度以優(yōu)化熔池形貌,再選取合適平均能量密度以獲得足夠熔化深度的工藝方法。本文的研究結(jié)果可為紫外激光加工SOI基光電子器件和SOI材料的激光損傷效應(yīng)提供理論依據(jù),也有助于促進(jìn)KrF準(zhǔn)分子激光在SOI納米光波導(dǎo)粗糙側(cè)壁光滑化中的進(jìn)一步發(fā)展和應(yīng)用。
[Abstract]:Silicon on insulator (Silicon-on-insulator, SOI) materials because of performance in the field of microelectronics and Optoelectronics incomparable advantages and become one of the important materials in the micro electromechanical system, optical communication, optical interconnect computing, digital image processing and military fields has a broad application prospect. Among them, the nano waveguide based on SOI material has strong local optical field capability, which takes advantage of the large refractive index difference between the Si waveguide layer and the SiO2 limiting layer, and is expected to become the basic guided wave element in the optical quantum communication. At present, the realization of mass production and low cost based on SOI material devices is the goal of advanced manufacturing. UV laser processing of microstructures not only has the advantages of high accuracy and flexible production, but also has wide applications in the processing of SOI based optoelectronic devices due to its advantages of small spot size, large absorption coefficient and no mask processing. Especially, ultraviolet laser surface melting technology has been applied to reduce the roughness of nano optical waveguide sidewall, and the fabrication of ultra-low loss nanoscale optical waveguides has become the key to the development of optical communication, biochemical sensing, high sensitive detection and many other fields. In this paper, the basic mechanism of interaction between laser and material and heat transfer theory based on the melting damage threshold and damage threshold of vaporization and temperature distribution of KrF excimer laser irradiation of SOI materials, discusses the characteristics of the small area of KrF excimer laser irradiation SOI thermal effects and applications in the field of micro machining, the material from SOI the heating effect is analyzed; on the basis of KrF excimer laser used in the finishing of SOI nano optical waveguide sidewall roughness, and carried out theoretical analysis and FEM simulation, based on the temperature field distribution, by controlling the technical parameters of the laser, the precise control of the waveguide pool morphology combined with knowledge of the rough side wall waveguide finishing, puts forward a new process flow, process parameters have been optimized. Clear KrF excimer laser irradiation temperature field of SOI material evolution, considering the effect of material latent heat and a wide range of temperature on material parameters, based on the analysis of the spatial distribution of the laser energy, the time, established a model of thermal response of SOI materials under laser irradiation; under different laser energy density, obtained SOI material of melting and vaporization damage threshold were 0.362 J/cm2, 1.285 J/cm2; the radial distribution of temperature shows that the high temperature region under nanosecond laser irradiation of the laser spot exists only in a certain range, away from the irradiated area temperature decreased rapidly; the axial temperature distribution showed that more heat deposited on the surface of Si layer and SiO2 layer at low temperature this is far less than the surface, silicon thermal conductivity caused by SiO2 thermal conductivity. For SOI nano optical waveguide surface of the larger side wall roughness light scattering loss caused by the transmission of big problems, using the finite element numerical simulation of KrF excimer laser melting on the waveguide side wall of the finishing temperature, to study the evolution of temperature field in molten pool side wall waveguide, optimization of process parameters. The results show that the weld pool is formed on the upper surface of the waveguide side wall facing the light angle; laser incident angle is fixed, weld pool penetration is positively correlated with the average energy density; the weld shape is controlled by the laser incident angle, with the decrease of the angle, the weld shape by unilateral U shape unilateral V shaped end. With unilateral V obtuse angle shape. The analysis shows that the weld pool morphology corresponding to the larger laser incidence angle is more conducive to the finishing of the side wall of the waveguide. Based on this, a method for determining the laser incidence angle to optimize the pool shape and selecting the suitable average energy density to obtain enough melting depth is put forward. The research results in this paper can provide a theoretical basis for laser damage effect of SOI based optoelectronic devices and SOI materials, and further promote the further development and application of KrF excimer laser in the smooth side wall of SOI nanomaterials.
【學(xué)位授予單位】：中北大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN252;TN249

【參考文獻(xiàn)】

相關(guān)期刊論文 前10條

1 王翼彬;金光勇;張巍;;長(zhǎng)脈沖激光作用下鋁合金板材溫度和熱應(yīng)力分析[J];中國(guó)激光;2016年08期

2 韓微微;趙萬(wàn)利;;激光輻照下硅材料溫度分布研究[J];光電技術(shù)應(yīng)用;2015年04期

3 靳羽華;趙艷;蔣毅堅(jiān);;準(zhǔn)分子激光微透鏡整形均束裝置[J];中國(guó)激光;2015年06期

4 潘艾剛;王俊彪;張賢杰;;基于等效熱容法和焓法的相變傳熱數(shù)值分析[J];計(jì)算機(jī)仿真;2014年02期

5 石強(qiáng);桑勝波;張文棟;李朋偉;胡杰;李剛;;納米光波導(dǎo)光滑技術(shù)研究進(jìn)展[J];紅外與激光工程;2013年11期

6 伊鵬;許鵬云;殷克平;李成凱;劉衍聰;;灰鑄鐵表面激光熱修復(fù)過(guò)程建模及熱響應(yīng)分析[J];中國(guó)激光;2013年03期

7 楊煥;黃珊;段軍;杜敏;;飛秒與納秒激光刻蝕單晶硅對(duì)比研究[J];中國(guó)激光;2013年01期

8 臧俊斌;薛晨陽(yáng);韋麗萍;王景雪;崔丹鳳;王永華;仝曉剛;;SOI納米波導(dǎo)的優(yōu)化制備與彎曲損耗測(cè)試[J];傳感技術(shù)學(xué)報(bào);2012年11期

9 李娟;孫文軍;孫京南;趙立萍;李孟洋;支洪武;;連續(xù)激光輻照GaAs材料損傷的數(shù)值模擬計(jì)算[J];光子學(xué)報(bào);2012年05期

10 劉晨星;張大勇;;紫外激光與半導(dǎo)體相互作用研究進(jìn)展綜述[J];光電技術(shù)應(yīng)用;2012年02期

，

本文編號(hào)：1345593