摻雜、插層硫族化合物的制備及其物性研究
本文關(guān)鍵詞:摻雜、插層硫族化合物的制備及其物性研究 出處:《東南大學》2015年碩士論文 論文類型:學位論文
更多相關(guān)文章: 二硫化鉬 二碲化鎢 摻雜 單晶 薄膜
【摘要】:近年來隨著石墨烯研究熱潮的掀起,過渡族金屬二硫?qū)倩?TMDCs)因其在光、電、機械、化學以及熱等方面具有的獨特性質(zhì)也引起了科研工作者的興趣。二硫化鉬和二碲化鎢是該體系的兩種典型代表物質(zhì),其中,二硫化鉬具有類似石墨烯的結(jié)構(gòu)和性能,在克服零帶隙石墨烯的缺點的同時,依然有石墨烯的很多優(yōu)點,從而在場效應(yīng)晶體管、傳感器、電致發(fā)光、電存儲等眾多領(lǐng)域有廣闊的應(yīng)用前景;而二碲化鎢具有與二硫化鉬類似的層狀結(jié)構(gòu),最近報道稱其在60T下仍具有不飽和的巨大的磁電阻效應(yīng),這是繼TMDCs中被普遍研究的CDW態(tài)和超導(dǎo)態(tài)之外的又一獨特性質(zhì),迅速激起了人們對WTe2材料的研究熱情。在二硫化鉬和二碲化鎢這樣的層狀體系中進行高濃度摻雜或者在層間插層,可使其物理性質(zhì)發(fā)生了巨大的改變,激發(fā)出優(yōu)異的物理性能。本論文的主要研究內(nèi)容如下:1.通過水溶液法制備了摻錳二硫化鉬粉末,并利用XRD、SEM和拉曼對其進行表征,錳的摻雜使得二硫化鉬層內(nèi)原子距離縮小而層間距離擴大。2.以二硫化鉬為鉬源、硫化錳為錳源,通過固相反應(yīng)法得到了名義摻雜為0.05-0.5的一系列樣品,隨著摻雜量的提高,樣品的晶格常數(shù)a和c都呈現(xiàn)增大的趨勢;更換原料,以鉬單質(zhì)和錳單質(zhì)為初始反應(yīng)物,獲得了呈花瓣狀的Mn0.05Mo0.95S2多晶樣品,SEM分析顯示樣品是由尺寸從200nnm到10μmm大小不等的六邊形晶粒組成。3.利用激光脈沖沉積系統(tǒng)制備出了摻錳的二硫化鉬薄膜,提高氧分壓有利于薄膜的結(jié)晶,并根據(jù)M003薄膜吸收度的測定,計算得到了不同氧分壓下生長的M003薄膜的禁帶寬度。4.利用CVT法制備出了尖葉狀的Fe0.28MoS2單晶樣品,實驗結(jié)果表明調(diào)節(jié)石英管的長度及其在鋼玉管中的位置可以控制單晶的生長,晶體的生長速率和生長模式都與沉積溫度有很大的關(guān)系;以MoSSe為例,比較了固相反應(yīng)法和CVT法生長單晶的情況,結(jié)果表明CVT法在制備TMDCs材料大塊單晶樣品方面具有優(yōu)勢。5.探索了Fe摻雜對WTe2單晶R-T以及MR-T行為的影響,發(fā)現(xiàn)Fe的摻雜不僅能夠提高樣品的質(zhì)量,還可以提高樣品的XMR到4倍以上;Ta, Re和Ir的摻雜對WTe2的XMR有不同程度的抑制作用,其中Ta摻雜的抑制作用相對較小,而Re和Ir的摻雜導(dǎo)致XMR降低至3%以下,這為WTe2帶隙的調(diào)節(jié)給出了有益的建議。
[Abstract]:In recent years, with the upsurge of graphene research, transition metal two chalcogenide (TMDCs) has attracted the interest of researchers because of its unique properties in light, electricity, machinery, chemistry and heat. Two tungsten molybdenum disulfide and telluride are two typical representative substances, the system including molybdenum disulfide has similar structure and properties of graphene, graphene in overcoming the zero band gap. In addition, there are still many advantages of graphene, and field effect transistors, sensors, electroluminescence, electric storage etc. have a broad application prospect; and the two telluride tungsten has a layered structure with MoS2 similar to that recently reported that it still has a huge magnetoresistance effect is not saturated in 60T, which is a unique nature after the CDW state is generally in the study of TMDCs and superconducting state, quickly aroused the people of WTe2 material research enthusiasm. High concentration doping or interlaminar intercalation in molybdenum disulfide and two tungsten telluride can cause great changes in physical properties and excite excellent physical properties. The main contents of this paper are as follows: 1., manganese doped molybdenum disulfide powder was prepared by aqueous solution method, and characterized by XRD, SEM and Raman. The doping of manganese makes the distance between atoms in the molybdenum disulfide layer shrink, and the distance between layers increases. With 2. molybdenum disulfide as molybdenum source, manganese sulfide as manganese source by solid phase reaction method has been the name for a series of 0.05-0.5 doped samples, with the doping amount increase, the lattice constants of a and C were increased; the replacement of raw materials, with molybdenum and manganese powder as the initial reactant, obtained a petal shaped Mn0.05Mo0.95S2 polycrystalline samples, SEM analysis showed that the samples are composed of hexagonal grain size from 200nnm to 10 mm the size of the composition. 3., Mn doped molybdenum disulfide thin films were prepared by laser pulse deposition system. Increasing oxygen partial pressure is beneficial to the crystallization of thin films. According to the measurement of absorbance of M003 thin films, the forbidden band width of M003 films grown under different oxygen partial pressures is calculated. 4. using CVT prepared Fe0.28MoS2 single crystal sample tip thallus. Experimental results show that adjusting the length of the quartz tubes and its position in the corundum tubes can control crystal growth, crystal growth rate and growth patterns have a great relationship with the deposition temperature; in the case of MoSSe, compared with the solid phase reaction method and CVT method the growth of single crystals, results show that CVT method has the advantage of large single crystal samples in the preparation of TMDCs material system. 5. to explore the effect of Fe doping on WTe2 single crystal R-T and MR-T, found that Fe doping can not only improve the quality of the sample, but also can improve the XMR of the sample to more than 4 times; Ta, Re and Ir doping on WTe2 XMR have different degrees of inhibition, the addition of Ta inhibited by relatively small however, Re and Ir doped lead XMR decreased to below 3%, the band gap of WTe2 regulation gives some useful suggestions.
【學位授予單位】:東南大學
【學位級別】:碩士
【學位授予年份】:2015
【分類號】:O613.71;O483
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