注意狀態(tài)和資源分配對錯誤再認的影響研究
發(fā)布時間:2019-01-11 09:37
【摘要】:錯誤記憶,又稱虛假記憶,是指人們會錯誤地回憶起從未見過的事物或從未發(fā)生過的情景。錯誤記憶是近年來有關記憶研究的一個重點,研究錯誤記憶有助于拓寬記憶研究的領域,加深對記憶過程和機制的理解。學者們針對錯誤記憶設計了多種范式,常用的有Loftus的誤導信息干擾范式、KK范式、想象膨脹范式、DRM范式、類別聯(lián)想研究范式和無意識知覺研究范式等。其中DRM范式是一種廣泛應用的可在實驗室環(huán)境中誘發(fā)可靠錯誤記憶效應的實驗范式。錯誤記憶受多種因素的影響,這些因素包括預警、詞表長度、呈現(xiàn)時間、呈現(xiàn)方式、呈現(xiàn)通道、學習次數、加工水平、分散注意、個體差異等。在分析了錯誤記憶相關研究后,擬采用DRM范式,考察注意狀態(tài)對錯誤再認成績的影響。實驗一中采用混合設計,操縱注意狀態(tài)和項目類型兩個變量,探究不同注意狀態(tài)對錯誤記憶的影響,其中注意狀態(tài)為被試間變量,分為集中注意、較低的分散注意和較高的分散注意三個水平;,項目類型為被試內變量,分為學習過項目和關鍵誘餌兩個水平。實驗二操縱任務類型和項目類型兩個變量,任務類型包括記憶任務、顏色判斷和詞性判斷三種不同任務,為被試間變量;項目類型分為學習過項目和關鍵誘餌,為被試內變量,研究無意識加工對錯誤記憶的影響。結果發(fā)現(xiàn),實驗一中從集中注意狀態(tài)到高分散狀態(tài),隨著注意集中水平的下降,被試對于關鍵誘餌的反應時間逐漸增加,注意水平和反應時呈負相關。實驗二中記憶任務的反應時大于顏色判斷和詞性判斷任務,被試對詞語的加工水平越深,反應時越短。由以上實驗結果,可得出以下結論:1.對于錯誤再認來說,注意分散會使再認反應時增加。2.錯誤再認并不需要以對詞語的有意加工為前提,即使在無意識的情況下,錯誤記憶也可能發(fā)生。
[Abstract]:False memory, also known as false memory, refers to people who mistakenly recall things they have never seen or what never happened. False memory is an important part of memory research in recent years. The study of false memory is helpful to broaden the field of memory research and deepen the understanding of memory process and mechanism. Scholars have designed a variety of paradigms for false memory, such as Loftus's misleading information interference paradigm, KK paradigm, imagination expansion paradigm, DRM paradigm, category association paradigm and unconscious perception paradigm. DRM paradigm is a widely used experimental paradigm that can induce reliable false memory effect in laboratory environment. False memory is affected by many factors, such as early warning, vocabulary length, presentation time, presentation mode, presentation channel, learning times, processing level, distraction, individual differences, etc. After analyzing the related research of false memory, we propose to use DRM paradigm to investigate the effect of attention state on error recognition scores. In experiment one, we used mixed design to manipulate the two variables of attention state and item type to explore the effect of different attention states on false memory, in which the attention state was a variable among the subjects, which was divided into focused attention. Lower distraction and higher distraction; In 2006, the item type was the internal variable, which was divided into two levels: the study item and the key bait. Experiment 2 manipulates two variables: task type and item type. Task types include memory task, color judgment and part of speech judgment. The items were divided into study items and key decoys, which were the variables within the subjects to study the effects of unconscious processing on false memory. The results showed that the reaction time for the key bait increased gradually with the decrease of the attention concentration level, and there was a negative correlation between the attention level and the reaction time. In experiment 2, the reaction time of memory task was larger than that of color judgment and part of speech judgment. The deeper the processing level of words was, the shorter the reaction time was. From the above experimental results, we can draw the following conclusions: 1. For false recognition, attention dispersion increases recognition time by. 2. False recognition does not require intentional processing of words, and false memory may occur even in unconscious situations.
【學位授予單位】:南京師范大學
【學位級別】:碩士
【學位授予年份】:2016
【分類號】:B842.3
,
本文編號:2406979
[Abstract]:False memory, also known as false memory, refers to people who mistakenly recall things they have never seen or what never happened. False memory is an important part of memory research in recent years. The study of false memory is helpful to broaden the field of memory research and deepen the understanding of memory process and mechanism. Scholars have designed a variety of paradigms for false memory, such as Loftus's misleading information interference paradigm, KK paradigm, imagination expansion paradigm, DRM paradigm, category association paradigm and unconscious perception paradigm. DRM paradigm is a widely used experimental paradigm that can induce reliable false memory effect in laboratory environment. False memory is affected by many factors, such as early warning, vocabulary length, presentation time, presentation mode, presentation channel, learning times, processing level, distraction, individual differences, etc. After analyzing the related research of false memory, we propose to use DRM paradigm to investigate the effect of attention state on error recognition scores. In experiment one, we used mixed design to manipulate the two variables of attention state and item type to explore the effect of different attention states on false memory, in which the attention state was a variable among the subjects, which was divided into focused attention. Lower distraction and higher distraction; In 2006, the item type was the internal variable, which was divided into two levels: the study item and the key bait. Experiment 2 manipulates two variables: task type and item type. Task types include memory task, color judgment and part of speech judgment. The items were divided into study items and key decoys, which were the variables within the subjects to study the effects of unconscious processing on false memory. The results showed that the reaction time for the key bait increased gradually with the decrease of the attention concentration level, and there was a negative correlation between the attention level and the reaction time. In experiment 2, the reaction time of memory task was larger than that of color judgment and part of speech judgment. The deeper the processing level of words was, the shorter the reaction time was. From the above experimental results, we can draw the following conclusions: 1. For false recognition, attention dispersion increases recognition time by. 2. False recognition does not require intentional processing of words, and false memory may occur even in unconscious situations.
【學位授予單位】:南京師范大學
【學位級別】:碩士
【學位授予年份】:2016
【分類號】:B842.3
,
本文編號:2406979
本文鏈接:http://sikaile.net/shekelunwen/xinlixingwei/2406979.html
教材專著