【摘要】：薄膜晶體管是一種利用柵極與源漏電極之間的電場來改變半導(dǎo)體薄膜材料導(dǎo)電能力的絕緣柵型場效應(yīng)晶體管,是有源矩陣液晶顯示技術(shù)的核心元件。氧化鋅是一種寬禁帶、直接帶隙化合物半導(dǎo)體材料,在可見光區(qū)具有很高的透過率,室溫下的電子遷移率較高,且光敏感性弱,制備的器件性能穩(wěn)定。 本文綜述了氧化鋅和二氧化硅薄膜的基本性質(zhì)及制備方法。采用溶膠-凝膠法分別制備了氧化鋅和二氧化硅薄膜。通過熱重-差熱分析得出,二氧化硅薄膜顆粒的生長在485℃左右基本完成,而氧化鋅薄膜晶粒的生長和晶向的形成在500℃左右基本完成。通過X射線衍射分析,探討了不同預(yù)熱溫度對ZnO薄膜晶粒取向的影響。通過掃描電子顯微鏡,對比了不同襯底對薄膜晶粒大小的影響。通過紫外-可見分光光度計,分析了不同薄膜層的透過率,擬合了薄膜的光學(xué)禁帶寬度。 本文重點研究了氧化鋅薄膜晶體管的制備過程及參數(shù)提取方法。采用溶膠-凝膠法在ITO玻璃襯底上制備了氧化鋅和二氧化硅薄膜,所得二氧化硅/氧化鋅復(fù)合薄膜的可見光透過率達到80 %以上。然后采用磁控濺射法制備Au源漏電極,形成了底柵結(jié)構(gòu)的薄膜晶體管。通過半導(dǎo)體器件性能表征,所得薄膜晶體管為n溝道器件,工作模式為增強型,電流開關(guān)比約為10~4,閾值電壓約為3 V,溝道遷移率約為6.95 cm~2/Vs。
[Abstract]:Thin film transistor is a kind of insulated gate field effect transistor which uses the electric field between gate and source drain electrode to change the conductivity of semiconductor thin film material. it is the core element of active matrix liquid crystal display technology. Zinc oxide is a kind of semiconductor material with wide band gap and direct band gap. ZnO has high transmittance in visible light region, high electron mobility at room temperature, weak photosensitivity, and the performance of the device is stable. In this paper, the basic properties and preparation methods of zinc oxide and silicon dioxide thin films are reviewed. Zinc oxide and silicon dioxide thin films were prepared by sol-gel method. The results of thermogravimetric and differential thermal analysis show that the growth of silicon dioxide thin film particles is basically completed at about 485 鈩，

本文編號：2497204