激光沉積法制備摻鈷氧化鋅稀磁半導(dǎo)體
發(fā)布時(shí)間：2019-05-29 22:51
【摘要】： 本文中,稀磁半導(dǎo)體(diluted magnetic semiconductor,簡稱DMS)是指由磁性過渡金屬或稀土金屬元素(例如:Mn、Fe、Co、Ni、Cr及Eu等)部分替代Ⅱ-Ⅵ族、Ⅳ-Ⅵ族、或Ⅲ-Ⅴ族等半導(dǎo)體中的部分元素后所形成的一類新型半導(dǎo)體材料,同時(shí)具有可以調(diào)節(jié)的電子電荷和電子自旋二種自由度特性。其中磁性離子的3d電子和半導(dǎo)體導(dǎo)帶sp電子之間的耦合作用(sp-d)以及磁性離子之間的(d-d)耦合交換作用使得稀磁半導(dǎo)體材料具有很多新穎的磁光和磁電性能,在高密度非易失性存儲器、磁感應(yīng)器、光隔離器、半導(dǎo)體集成電路、半導(dǎo)體激光器和自旋量子計(jì)算機(jī)等領(lǐng)域有廣闊的應(yīng)用前景。 本文簡述了稀磁半導(dǎo)體的歷史發(fā)展及研究現(xiàn)狀,在實(shí)驗(yàn)上利用脈沖激光沉積法,首先嘗試制備ZnO靶材和薄膜,并以此為基礎(chǔ),成功制備摻鈷ZnO靶材和薄膜。通過對材料的光電磁及結(jié)構(gòu)性質(zhì)測試,研究了材料性質(zhì)與制備方法和工藝的關(guān)系。 論文主要內(nèi)容包括: (1)利用GCR-170型脈沖激光器Nd:YAG的三次諧波(355nm),以藍(lán)寶石Al2O3 (0001)為襯底,在不同溫度下采用脈沖激光沉積法(PLD)制備了ZnO薄膜。通過原子力顯微鏡(AFM)、Raman譜、光致發(fā)光(PL)譜、紅外透射譜、霍爾效應(yīng)和表面粗糙度分析儀對制備的ZnO薄膜進(jìn)行了測試。分析了在不同襯底溫度下薄膜的表面形貌、光學(xué)特性,同時(shí)進(jìn)行了薄膜結(jié)構(gòu)和厚度的測試。研究表明:襯底溫度對ZnO薄膜的表面形貌、光學(xué)特性和結(jié)構(gòu)特性都是重要的工藝參數(shù),尤其在500℃時(shí)沉積的ZnO薄膜致密均勻,并表現(xiàn)出較強(qiáng)的紫外發(fā)射峰。 (2)在不同的燒結(jié)溫度下,利用固相反應(yīng)法制備Zn0.9Co0.1O塊體材料,應(yīng)用單因素實(shí)驗(yàn)法對相同的配比成份樣品進(jìn)行處理,并分別對Zn0.9Co0.1O材料進(jìn)行了X射線能譜(XPS)、M-T、傅立葉紅外吸收譜(FTIR)、X射線衍射(XRD)、拉曼圖譜(Raman)和光致發(fā)光譜(PL)測試和分析。實(shí)驗(yàn)結(jié)果表明:Co2+摻入ZnO晶格,并很好取代Zn2+的位置而被四面氧所包圍,形成了Co-O鍵。燒結(jié)溫度對Co摻雜濃度影響不大,排除了形成Co團(tuán)簇或CoO晶相的可能。燒結(jié)溫度制約Co2+摻入ZnO晶格,并取代Zn2+的位置而不影響ZnO結(jié)構(gòu),在1200℃時(shí)制備的材料保持了纖鋅礦結(jié)構(gòu),從拉曼光譜中也看到Co2+的聲子結(jié)構(gòu)特征明顯,并且出現(xiàn)Co離子進(jìn)入ZnO晶格使得帶隙變窄的光學(xué)現(xiàn)象。 (3)基于選取不同的基片溫度,利用脈沖激光沉積的方法,成功制備出鈷摻雜的氧化鋅薄膜。通過對制備的樣品的原子力顯微鏡(AFM)測試,觀測到生長樣品的表面形貌圖形較未摻雜ZnO薄膜光滑平整很多;實(shí)驗(yàn)上對薄膜的X射線衍射(XRD)表征,測量出Co的摻雜并沒有破壞ZnO纖鋅礦結(jié)構(gòu),500℃樣品的表面形貌和結(jié)構(gòu)最佳;對薄膜的XPS的分析顯示,Co離子在樣品中以+2價(jià)的形式存在,并隨著襯底溫度的增加Co的含量也在不斷升高,但當(dāng)溫度到達(dá)800℃時(shí)因超過Co溶解限出現(xiàn)了Co團(tuán)簇現(xiàn)象。為進(jìn)一步驗(yàn)證Co離子進(jìn)入ZnO的晶格,對不同基片溫度制備的樣品進(jìn)行透射譜的測量,從全光透射譜看到寬帶能隙發(fā)生寬化,并討論了內(nèi)部機(jī)理。同時(shí)襯底溫度的升高造成結(jié)構(gòu)、價(jià)態(tài)和含量的變化進(jìn)而影響了樣品的電學(xué)和磁學(xué)性能,測試發(fā)現(xiàn)隨著基片溫度升高,ZnO摻Co薄膜的載流子濃度和PN型發(fā)生明顯改變,同時(shí)磁學(xué)性能隨著摻雜濃度呈開口向下的拋物線狀。
[Abstract]:In this paper, a thin magnetic semiconductor (DMS) refers to a group consisting of a magnetic transition metal or a rare earth metal element (e.g., Mn, Fe, Co, Ni, Cr and Eu, etc.), Or a class of novel semiconductor materials formed after part of the elements in the semiconductors of the group III-V and the like, and simultaneously has two degrees of freedom of the electronic charge and the electron spin that can be adjusted. in which the coupling effect (sp-d) between the 3d electron of the magnetic ion and the electron of the semiconductor conduction band sp and the (d-d) coupling exchange between the magnetic ions enable the thin magnetic semiconductor material to have a plurality of novel magneto-optical and magneto-electric properties, The optical isolator, the semiconductor integrated circuit, the semiconductor laser and the spin quantum computer have wide application prospect. In this paper, the history development and the research status of the rare-magnetic semiconductors are briefly described. In the experiment, the pulse laser deposition method is used to first attempt to prepare the ZnO target and the thin film, and based on the method, the Co-doped ZnO target is successfully prepared. And the material properties and the preparation method and the process are studied by testing the photoelectromagnetic and structural properties of the materials. The relationship between the two. The main contents of the paper are as follows: (1) The third harmonic (355 nm) of the Nd: YAG laser of the GCR-170 type pulse laser is used, and the sapphire Al2O3 (0001) is used as the substrate, and the pulse laser deposition method is adopted at different temperatures (P The ZnO films were prepared by means of atomic force microscopy (AFM), Raman spectrum, photoluminescence (PL) spectrum, infrared transmission spectrum, Hall effect and surface roughness analyzer. The surface morphology and optical properties of the thin films at different substrate temperatures were analyzed, and at the same time, the surface morphology and optical properties of the films were analyzed. The film structure and thickness are tested. The results show that the surface morphology, optical properties and structural characteristics of ZnO films are important process parameters, especially at 500 鈩，
本文編號：2488289
[Abstract]:In this paper, a thin magnetic semiconductor (DMS) refers to a group consisting of a magnetic transition metal or a rare earth metal element (e.g., Mn, Fe, Co, Ni, Cr and Eu, etc.), Or a class of novel semiconductor materials formed after part of the elements in the semiconductors of the group III-V and the like, and simultaneously has two degrees of freedom of the electronic charge and the electron spin that can be adjusted. in which the coupling effect (sp-d) between the 3d electron of the magnetic ion and the electron of the semiconductor conduction band sp and the (d-d) coupling exchange between the magnetic ions enable the thin magnetic semiconductor material to have a plurality of novel magneto-optical and magneto-electric properties, The optical isolator, the semiconductor integrated circuit, the semiconductor laser and the spin quantum computer have wide application prospect. In this paper, the history development and the research status of the rare-magnetic semiconductors are briefly described. In the experiment, the pulse laser deposition method is used to first attempt to prepare the ZnO target and the thin film, and based on the method, the Co-doped ZnO target is successfully prepared. And the material properties and the preparation method and the process are studied by testing the photoelectromagnetic and structural properties of the materials. The relationship between the two. The main contents of the paper are as follows: (1) The third harmonic (355 nm) of the Nd: YAG laser of the GCR-170 type pulse laser is used, and the sapphire Al2O3 (0001) is used as the substrate, and the pulse laser deposition method is adopted at different temperatures (P The ZnO films were prepared by means of atomic force microscopy (AFM), Raman spectrum, photoluminescence (PL) spectrum, infrared transmission spectrum, Hall effect and surface roughness analyzer. The surface morphology and optical properties of the thin films at different substrate temperatures were analyzed, and at the same time, the surface morphology and optical properties of the films were analyzed. The film structure and thickness are tested. The results show that the surface morphology, optical properties and structural characteristics of ZnO films are important process parameters, especially at 500 鈩，
本文編號：2488289
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