【摘要】：為降低氧化鋅薄膜晶體管(ZnO TFT)的工作電壓,提高遷移率,采用磁控濺射法在氧化銦錫(ITO)導(dǎo)電玻璃基底上室溫下依次沉積NbLaO柵介質(zhì)層和ZnO半導(dǎo)體有源層,制備出ZnO TFT,對器件的電特性進(jìn)行了表征。該ZnO TFT呈現(xiàn)出優(yōu)異的器件性能:當(dāng)柵電壓為5 V、漏源電壓為10 V時,器件的飽和漏電流高達(dá)2.2 m A;有效場效應(yīng)飽和遷移率高達(dá)107 cm~2/(V·s),是目前所報道的室溫下濺射法制備ZnO TFT的最高值,亞閾值擺幅為0.28 V/decade,開關(guān)電流比大于107。利用原子力顯微鏡(AFM)對NbLaO和ZnO薄膜的表面形貌進(jìn)行了分析,分析了器件的低頻噪聲特性,對器件呈現(xiàn)高遷移率、低亞閾值擺幅以及遲滯現(xiàn)象的機(jī)理進(jìn)行了討論。
[Abstract]:In order to reduce the working voltage and improve the mobility of ZnO thin film transistor (ZnO TFT), NbLaO gate dielectric layer and ZnO semiconductor active layer were deposited on indium tin oxide (ITO) conductive glass substrate by magnetron splashing at room temperature. ZnO TFT, was prepared. The electrical characteristics of the device are characterized. The ZnO TFT shows excellent performance: when the gate voltage is 5 V and the leakage source voltage is 10 V, the saturated leakage current of the device is as high as 2.2 Ma. The effective field effect saturation mobility is as high as 107 cm~2/ (V 路s), is the highest value of ZnO TFT prepared by room temperature sputter method at room temperature, the subthreshold swing is 0.28 V 鈮，

本文編號：2486444