【摘要】： 采用射頻磁控濺射法在PEN和PET襯底上室溫制備了柔性AZO薄膜。結果表明,實驗制備的柔性AZO薄膜為六角纖鋅礦結構,且具有良好的c軸擇優(yōu)取向。濺射功率、工作氣壓、襯底種類、Ar氣流量等生長條件對薄膜的結構、光電性能有一定影響。工作氣壓增大惡化薄膜結晶性能,使薄膜電阻率增大,禁帶寬度由于Burstein-Moss效應而變窄。在濺射功率為150W,Ar氣流量為20sccm和工作氣壓為0.05Pa的優(yōu)化條件下,PEN襯底上沉積的AZO薄膜品質因數(shù)最高,達到1.78×10~4Ω-1·cm~(-1),此時薄膜電阻率、載流子濃度和霍爾遷移率分別為1.11×10~(-3)Ω·cm、4.14×10~(20)cm~(-3)和13.60 cm~2·V~(-1)·s~(-1),薄膜的可見光絕對透射率達到95.70%。 在優(yōu)化生長的AZO薄膜基礎上,利用射頻磁控濺射法在PET和玻璃襯底上室溫制備了AZO/Ag/AZO多層膜,并研究了Ag層厚度、Ag層濺射功率以及襯底種類對多層膜結構和光電性能的影響。結果表明,AZO/Ag/AZO多層膜呈現(xiàn)ZnO(002)和Ag(111)擇優(yōu)取向,且Ag(111)衍射峰強度隨Ag層厚度的增加而增大。薄膜導電性隨Ag層厚度增加而增強,但在Ag層生長初期,霍爾遷移率由于受界面散射影響而減小。在Ag層濺射功率為200W,Ag層厚度為24nm的優(yōu)化條件下,薄膜品質因數(shù)最高,此時PET上沉積的多層膜電阻率、透射率、品質因數(shù)分別達到3.97×10~(-5)Ω·cm、78.67%和6.59×10~4Ω~(-1)·cm~(-1)。
[Abstract]:Flexible AZO thin films were prepared on PEN and PET substrates by RF magnetron sputtering at room temperature. The results show that the prepared flexible AZO thin films have hexagonal wurtzite structure and good c-axis preferred orientation. Sputtering power, working pressure, substrate type, Ar gas flow rate and other growth conditions have certain influence on the structure and optoelectronic properties of the films. With the increase of the working pressure, the crystalline properties of the films are deteriorated, and the resistivity of the films is increased, and the band gap is narrowed due to the Burstein-Moss effect. When the sputtering power is 150W ar gas flow rate is 20sccm and the working pressure is 0.05Pa, the quality factor of AZO film deposited on PEN substrate is the highest, reaching 1.78 脳 10 ~ (4) 惟 -1 cm~ (-1), and the film resistivity is obtained. The carrier concentration and Hall mobility are 1.11 脳 10 ~ (-3) 惟 cm,4.14 脳 10 ~ (20) cm~ (-3) and 13.60 cm~2 V ~ (-1) s ~ (-1), respectively. Based on the optimized growth of AZO films, AZO/Ag/AZO multilayers were prepared on PET and glass substrates at room temperature by RF magnetron sputtering, and the thickness of Ag layers was studied. The effects of sputtering power and substrate type of Ag layer on the structure and optoelectronic properties of multilayer films. The results show that the ZnO (002) and Ag (111) preferred orientations of AZO/Ag/AZO multilayer films, and the intensity of Ag (111) diffraction peak increases with the increase of Ag layer thickness. The conductivity of the film increases with the thickness of the Ag layer, but at the beginning of the growth of the Ag layer, the Hall mobility decreases due to the influence of the interface scattering. When the sputtering power of Ag layer is 200W Ag layer thickness is 24nm, the film quality factor is the highest, and the resistivity, transmittance and quality factor of the multilayer film deposited on PET are 3.97 脳 10 ~ (-5) 惟 cm, respectively. 78.67% and 6.59 脳 10 ~ 4 惟 ~ (-1) cm~ (-1).
【學位授予單位】：南京航空航天大學
【學位級別】：碩士
【學位授予年份】：2010
【分類號】：TB43

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