水滑石前體法制備Fe摻雜ZnO納米材料及其發(fā)光性能研究
發(fā)布時(shí)間：2018-11-23 07:44
【摘要】： 氧化鋅(ZnO)是一種重要直接寬帶隙的半導(dǎo)體材料,在生物、化學(xué)、氣敏傳感器、場(chǎng)發(fā)射、納米激光器、太陽能電池等光電器件方面有廣闊的應(yīng)用前景。摻雜是非常重要的半導(dǎo)體改性技術(shù),通過摻入雜質(zhì)元素可以改變或提高ZnO光學(xué)、磁學(xué)和電學(xué)等方面性能。目前,關(guān)于摻雜ZnO納米材料的制備及其性能研究主要集中在Al、Ga、In、N、Mn和Co等元素,而Fe元素?fù)诫s而報(bào)道較少。 本文首次以鋅鐵水滑石(ZnFe-LDH)為單一前驅(qū)體制備Fe摻雜ZnO一維納米材料及其取向納米結(jié)構(gòu)薄膜,并研究了其光致發(fā)光性能。具體研究結(jié)果如下： 1.采用熱蒸發(fā)法以ZnFe-LDH納米粒子為前驅(qū)體,以硅片為基底,在較低的溫度范圍內(nèi)沉積制得均勻Fe摻雜ZnO一維納米材料；其中ZnO為六方纖鋅礦結(jié)構(gòu)單晶,摻雜元素Fe進(jìn)入ZnO晶格,未觀察到Fe雜質(zhì)相。通過改變反應(yīng)溫度,實(shí)現(xiàn)了其納米結(jié)構(gòu)及Fe摻雜量的調(diào)控,分別在600℃、700℃、800℃條件下得到Fe的摻雜量為0.16%、0.30%和0.49%的ZnO納米錐、納米柱和納米線。 光致發(fā)光性能研究表明,所得Fe摻雜ZnO一維納米材料具有獨(dú)特的發(fā)光性能,其均在389nm處出現(xiàn)半峰寬較窄的紫外發(fā)射峰和在藍(lán)綠光區(qū)451nm、468nm、477nm出現(xiàn)了結(jié)構(gòu)化的發(fā)射峰。特殊地,在600℃條件下所得ZnO納米錐在477nm處發(fā)射峰半峰寬窄且強(qiáng)度強(qiáng),在700℃、800℃條件下所得產(chǎn)物在藍(lán)綠光區(qū)的結(jié)構(gòu)化的發(fā)射峰因氧空位影響其強(qiáng)度被增強(qiáng)。最后,我們揭示了該法制備均勻Fe摻雜ZnO一維納米材料的生長機(jī)理為氣固機(jī)理。 2.采用成膜技術(shù)將ZnFe-LDH納米粒子組裝成致密有序的(00l)取向薄膜,以其為前驅(qū)體并同時(shí)作為基底,在管式氣氛爐中焙燒,在較低溫度(500℃)和低載氣流速下原位生長(00l)取向Fe摻雜ZnO納米棒薄膜,其中納米棒沿(00l)晶面擇優(yōu)生長,直徑可以在20nm-100nm,長度80nm-400nm范圍內(nèi)調(diào)控。薄膜在390nm處較強(qiáng)的紫外發(fā)射峰和在藍(lán)綠光區(qū)468nm、477nm處出現(xiàn)較弱的結(jié)構(gòu)化發(fā)射峰。
[Abstract]:Zinc oxide (ZnO) is an important semiconductor material with wide band gap. It has a wide application prospect in biology, chemistry, gas sensor, field emission, nanometer laser, solar cell and other optoelectronic devices. Doping is a very important semiconductor modification technology. Doping with impurity elements can change or improve the optical, magnetic and electrical properties of ZnO. At present, the preparation and properties of doped ZnO nanomaterials are mainly focused on the elements such as Al,Ga,In,N,Mn and Co. However, there are few reports on the doping of Fe elements. In this paper, Fe doped one-dimensional (ZnO) nanocrystals and their oriented nanostructured films were prepared by using zinc ferrite talc (ZnFe-LDH) as a single precursor for the first time, and their photoluminescence properties were studied. The results are as follows: 1. Homogeneous Fe doped ZnO one-dimensional nanomaterials were prepared by thermal evaporation method with ZnFe-LDH nanoparticles as precursor and silicon wafer as substrate in a lower temperature range. ZnO is hexagonal wurtzite structure single crystal, doped element Fe into the ZnO lattice, no Fe impurity phase was observed. By changing the reaction temperature, the nanostructure and the amount of Fe doping were controlled. At 600 鈩，
本文編號(hào)：2350815
[Abstract]:Zinc oxide (ZnO) is an important semiconductor material with wide band gap. It has a wide application prospect in biology, chemistry, gas sensor, field emission, nanometer laser, solar cell and other optoelectronic devices. Doping is a very important semiconductor modification technology. Doping with impurity elements can change or improve the optical, magnetic and electrical properties of ZnO. At present, the preparation and properties of doped ZnO nanomaterials are mainly focused on the elements such as Al,Ga,In,N,Mn and Co. However, there are few reports on the doping of Fe elements. In this paper, Fe doped one-dimensional (ZnO) nanocrystals and their oriented nanostructured films were prepared by using zinc ferrite talc (ZnFe-LDH) as a single precursor for the first time, and their photoluminescence properties were studied. The results are as follows: 1. Homogeneous Fe doped ZnO one-dimensional nanomaterials were prepared by thermal evaporation method with ZnFe-LDH nanoparticles as precursor and silicon wafer as substrate in a lower temperature range. ZnO is hexagonal wurtzite structure single crystal, doped element Fe into the ZnO lattice, no Fe impurity phase was observed. By changing the reaction temperature, the nanostructure and the amount of Fe doping were controlled. At 600 鈩，
本文編號(hào)：2350815
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