【摘要】：銅鋅錫硫Cu2ZnSnS4 (CZTS)薄膜是一種新型的太陽電池材料。它是直接帶隙p型半導(dǎo)體材料。它具有1.4-1.5 eV的禁帶寬度,光吸收系數(shù)超過104cm-1。這些優(yōu)異的性能使它成為一種很有發(fā)展前景的太陽能電池材料。 采用電化學(xué)一步法在ITO襯底上制備銅鋅錫硫(CZTS)四元化合物薄膜。尋找適合CZTS薄膜沉積的條件。 使用線形掃描法研究材料沉積的電化學(xué)特性。分別采用恒壓,恒流等多種方法研究薄膜的制備條件,成功制備出CZTS材料。分別使用X射線衍射譜分析材料結(jié)構(gòu),使用掃描電子顯微鏡觀察其表面形貌,使用吸收譜研究其禁帶寬度。發(fā)現(xiàn)了CZTS的生長(zhǎng)情況與退火溫度有很大的關(guān)系。在N2環(huán)境下,退火溫度為500℃時(shí),成功制備出具有硫鎂釩結(jié)構(gòu)的CZTS薄膜,并測(cè)得其禁帶寬度接近理論值,約為1.5eV。 另外研究了沉積次數(shù)對(duì)結(jié)晶的影響。沉積三次的樣品結(jié)晶程度比只沉積一次的樣品結(jié)晶程度高。
[Abstract]:Copper-zinc-tin-sulfur Cu2ZnSnS4 (CZTS) film is a new type of solar cell material. It is a direct band gap p type semiconductor material. It has a band gap of 1.4-1.5 eV, and the optical absorption coefficient exceeds 104cm-1. These excellent properties make it a promising solar cell material. Copper, zinc, tin and sulfur (CZTS) quaternary compound thin films were prepared on ITO substrates by one step electrochemical method. To find suitable conditions for CZTS film deposition. The electrochemical properties of the deposited materials were studied by linear scanning method. The preparation conditions of CZTS films were studied by means of constant voltage and constant current, respectively, and the CZTS materials were successfully prepared. X-ray diffraction spectra were used to analyze the structure of the materials, scanning electron microscopy (SEM) was used to observe the surface morphology, and absorption spectra were used to study the bandgap. It is found that the growth of CZTS is closely related to the annealing temperature. CZTS thin films with magnesia-vanadium structure have been successfully prepared at N _ 2 and annealed at 500 鈩，

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