化學浴沉積法制備銅銦鎵硒薄膜太陽能電池緩沖層材料CdS
發(fā)布時間：2018-10-11 20:03
【摘要】：當前,隨著化石能源的日益枯竭以及環(huán)境污染等問題迫使人們尋求可替代的再生新能源。而且光伏產(chǎn)業(yè)正在成為各國經(jīng)濟發(fā)展的戰(zhàn)略新興產(chǎn)業(yè)。其中作為第三代的薄膜太陽能電池銅銦鎵硒(CIGS)也在逐漸產(chǎn)業(yè)化。然而,在如何進一步提高電池效率以及大規(guī)模產(chǎn)業(yè)化確保重復性方面還存在很多障礙。銅銦鎵硒太陽能電池涉及很多層薄膜材料的制備,工藝復雜,每一層材料的制備都會對電池性能有影響。本論文就化學浴沉積法合成緩沖層材料CdS薄膜的工藝及其生長機制進行了一些研究。 化學浴沉積法制備CdS薄膜主要涉及到兩種機制:ion-by-ion和cluster-by-cluster;兩種機制生長出來的薄膜具有不同的物理性質(zhì)。條件的改變(如溫度、濃度、pH值、沉積時間等)會對薄膜的生長速率,表面形貌,晶體結(jié)構,光學性質(zhì)等產(chǎn)生很大的影響。由于反應物濃度和pH值的影響在文獻中已經(jīng)有很多報道,本文著重選取了沉積溫度和時間對薄膜性能的影響。 在60oC、70oC、80oC、90oC條件下,沉積不同時間得到CdS薄膜,對其進行SEM、XRD以及OT表征,根據(jù)Urbach公式計算帶隙。隨著沉積溫度的增加,薄膜生長速率加快直到達到飽和厚度,然后由于剝蝕,進一步反應薄膜厚度會降低。本文提出,不論溫度,薄膜的生長一開始由ion-by-ion機制占主導,隨著時間的進行,cluster-by-cluster機制控制著反應。并從表面形貌,晶體結(jié)構,帶隙值變化等方面對這一生長機制作出了合理的解釋。 另外,盡管銅銦鎵硒太陽能電池在未來幾年仍有很大發(fā)展?jié)摿?但由于銦在地殼中的分布量比較小,其最終勢必會受到限制。類似銅銦鎵硒(CuInxGa1 xSe2)薄膜的銅鋅錫硫薄膜(Cu2ZnSnS4)正在引起實驗室的廣泛關注。它們具有相同的黃銅礦晶體結(jié)構,類似的光電性質(zhì)。銅鋅錫硫薄膜的直接帶隙為1.4ev 1.5ev,其中的各種基本元素在地殼中分布廣泛且無毒。且目前采用共蒸發(fā)法,效率為6.77%的CZTS太陽能電池已經(jīng)被制備出。因此,本論文在非真空法制備CZTS薄膜方面也做了一些初步的探索。 利用Sol Gel法合成金屬前驅(qū)體,在氫氣氛中退火,最后硫化的過程得到CZTS薄膜。
[Abstract]:At present, with the increasing depletion of fossil energy and environmental pollution, people seek alternative renewable energy sources. And photovoltaic industry is becoming a strategic emerging industry of economic development in various countries. As the third generation of thin film solar cells, copper, indium, gallium and selenium (CIGS) are gradually industrialized. However, there are still many obstacles to further improving battery efficiency and ensuring repeatability in large-scale industrialization. Copper indium gallium selenium solar cells involve the preparation of many layers of thin film materials, the preparation of each layer of materials will have an impact on the performance of the cell. In this paper, the synthesis process and growth mechanism of buffer material CdS thin films by chemical bath deposition were studied. The preparation of CdS thin films by chemical bath deposition mainly involves two mechanisms: ion-by-ion and cluster-by-cluster;, which have different physical properties. The change of conditions (such as temperature, concentration, pH value, deposition time, etc.) will have a great influence on the growth rate, surface morphology, crystal structure and optical properties of the films. Because the influence of reactant concentration and pH value has been reported in the literature, the influence of deposition temperature and time on the film properties has been selected in this paper. CdS thin films were deposited at 60oC (70oC) 80oC (90oC) at different time and characterized by SEM,XRD and OT. The band gap was calculated according to the Urbach formula. With the increase of deposition temperature, the growth rate of the films increases until the thickness reaches saturation, and then the thickness of the films will be reduced further because of denudation. It is suggested that the ion-by-ion mechanism dominates the growth of the films at first, and that the cluster-by-cluster mechanism controls the reaction with time. A reasonable explanation is given for the lifetime of the machine from the aspects of surface morphology, crystal structure, band gap value and so on. In addition, although copper indium gallium selenium solar cells still have great potential for development in the next few years, due to the relatively small distribution of indium in the crust, it is bound to be limited in the end. Copper, zinc, tin and sulfur (Cu2ZnSnS4) thin films, similar to copper indium gallium selenium (CuInxGa1 xSe2) films, are attracting extensive attention in laboratory. They have the same chalcopyrite crystal structure and similar photoelectric properties. The direct band gap of copper, zinc, tin and sulfur thin films is 1.4ev 1. 5 ev.The basic elements in the films are widely distributed in the earth's crust and are nontoxic. At present, CZTS solar cells with an efficiency of 6.77% have been prepared by co-evaporation method. Therefore, this thesis has also made some preliminary exploration in the preparation of CZTS thin films by non-vacuum method. Metal precursors were synthesized by Sol Gel method, annealed in hydrogen atmosphere and finally vulcanized to obtain CZTS films.
【學位授予單位】：中國科學技術大學
【學位級別】：碩士
【學位授予年份】：2011
【分類號】：TM914.42
本文編號：2265071
[Abstract]:At present, with the increasing depletion of fossil energy and environmental pollution, people seek alternative renewable energy sources. And photovoltaic industry is becoming a strategic emerging industry of economic development in various countries. As the third generation of thin film solar cells, copper, indium, gallium and selenium (CIGS) are gradually industrialized. However, there are still many obstacles to further improving battery efficiency and ensuring repeatability in large-scale industrialization. Copper indium gallium selenium solar cells involve the preparation of many layers of thin film materials, the preparation of each layer of materials will have an impact on the performance of the cell. In this paper, the synthesis process and growth mechanism of buffer material CdS thin films by chemical bath deposition were studied. The preparation of CdS thin films by chemical bath deposition mainly involves two mechanisms: ion-by-ion and cluster-by-cluster;, which have different physical properties. The change of conditions (such as temperature, concentration, pH value, deposition time, etc.) will have a great influence on the growth rate, surface morphology, crystal structure and optical properties of the films. Because the influence of reactant concentration and pH value has been reported in the literature, the influence of deposition temperature and time on the film properties has been selected in this paper. CdS thin films were deposited at 60oC (70oC) 80oC (90oC) at different time and characterized by SEM,XRD and OT. The band gap was calculated according to the Urbach formula. With the increase of deposition temperature, the growth rate of the films increases until the thickness reaches saturation, and then the thickness of the films will be reduced further because of denudation. It is suggested that the ion-by-ion mechanism dominates the growth of the films at first, and that the cluster-by-cluster mechanism controls the reaction with time. A reasonable explanation is given for the lifetime of the machine from the aspects of surface morphology, crystal structure, band gap value and so on. In addition, although copper indium gallium selenium solar cells still have great potential for development in the next few years, due to the relatively small distribution of indium in the crust, it is bound to be limited in the end. Copper, zinc, tin and sulfur (Cu2ZnSnS4) thin films, similar to copper indium gallium selenium (CuInxGa1 xSe2) films, are attracting extensive attention in laboratory. They have the same chalcopyrite crystal structure and similar photoelectric properties. The direct band gap of copper, zinc, tin and sulfur thin films is 1.4ev 1. 5 ev.The basic elements in the films are widely distributed in the earth's crust and are nontoxic. At present, CZTS solar cells with an efficiency of 6.77% have been prepared by co-evaporation method. Therefore, this thesis has also made some preliminary exploration in the preparation of CZTS thin films by non-vacuum method. Metal precursors were synthesized by Sol Gel method, annealed in hydrogen atmosphere and finally vulcanized to obtain CZTS films.
【學位授予單位】：中國科學技術大學
【學位級別】：碩士
【學位授予年份】：2011
【分類號】：TM914.42
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