一步溶液法制備有機-無機雜化鈣鈦礦薄膜
發(fā)布時間:2018-09-01 12:22
【摘要】:有機-無機雜化鈣鈦礦薄膜作為太陽電池的光吸收層,其薄膜的形貌、結(jié)構(gòu)以及結(jié)晶程度等因素對電池的光電轉(zhuǎn)換效率起到了決定性的作用,而薄膜的質(zhì)量主要取決于制備工藝。采用一步溶液法制備了有機-無機雜化鈣鈦礦(CH_3NH_3PbI_3)薄膜,主要分析了在氟摻雜氧化錫(FTO)導電玻璃、玻璃和多晶硅3種不同襯底上生長CH_3NH_3PbI_3薄膜的形貌和結(jié)構(gòu)的差異。結(jié)果表明,在FTO導電玻璃和玻璃襯底上生長的薄膜的晶粒尺寸和晶粒分布均勻,而在硅襯底上生長的薄膜的邊緣晶粒尺寸大于中心處的晶粒,并詳細分析了造成這種現(xiàn)象的原因。此外,在50℃的低溫下對在FTO導電玻璃襯底生長的CH_3NH_3PbI_3薄膜進行了不同時間的退火處理。實驗結(jié)果表明,隨著熱處理時間的增加,晶粒尺寸也增加,但是合成的CH_3NH_3PbI_3薄膜部分發(fā)生了分解。
[Abstract]:Organic-inorganic hybrid perovskite film is the photoabsorption layer of solar cells. The morphology, structure and degree of crystallization of the film play a decisive role in the photovoltaic conversion efficiency. The quality of the film mainly depends on the preparation process. Organic-inorganic hybrid perovskite (CH_3NH_3PbI_3) thin films were prepared by one-step solution method. The morphology and structure of CH_3NH_3PbI_3 thin films grown on fluorine-doped tin oxide (FTO) conductive glass, glass and polysilicon substrates were analyzed. The results show that the grain size and grain distribution of the films grown on FTO conductive glass and glass substrates are uniform, while the grain size at the edge of the films grown on silicon substrates is larger than that at the center. The causes of this phenomenon are analyzed in detail. In addition, CH_3NH_3PbI_3 thin films grown on FTO conductive glass substrates were annealed at 50 鈩,
本文編號:2217190
[Abstract]:Organic-inorganic hybrid perovskite film is the photoabsorption layer of solar cells. The morphology, structure and degree of crystallization of the film play a decisive role in the photovoltaic conversion efficiency. The quality of the film mainly depends on the preparation process. Organic-inorganic hybrid perovskite (CH_3NH_3PbI_3) thin films were prepared by one-step solution method. The morphology and structure of CH_3NH_3PbI_3 thin films grown on fluorine-doped tin oxide (FTO) conductive glass, glass and polysilicon substrates were analyzed. The results show that the grain size and grain distribution of the films grown on FTO conductive glass and glass substrates are uniform, while the grain size at the edge of the films grown on silicon substrates is larger than that at the center. The causes of this phenomenon are analyzed in detail. In addition, CH_3NH_3PbI_3 thin films grown on FTO conductive glass substrates were annealed at 50 鈩,
本文編號:2217190
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