本文選題：溶膠-凝膠法　切入點：AZO薄膜　出處：《武漢理工大學》2010年碩士論文　論文類型：學位論文

【摘要】： 鋁摻雜氧化鋅(AZO)薄膜,一種新興的寬禁帶半導體材料,其透明導電性可廣泛應用于制備透明電極和太陽能電池的透明窗口材料,其紫外發(fā)光性能可應用于紫外探測器和激光器。AZO薄膜的制備方法主要有磁控濺射,化學氣相沉積以及溶膠-凝膠等方法。制備具有可重復性和穩(wěn)定性的大面積均勻透明導電氧化鋅薄膜是目前研究的熱點,本論文以溶膠-凝膠法為制備方法,制備了具有高透光率,較低電阻率和一定光致發(fā)光性能的AZO薄膜。 本論文以二水合乙酸鋅作為鋅源,六水氯化鋁作為鋁源,乙二醇甲醚作為有機溶劑,單乙醇胺作為穩(wěn)定劑,按照一定比例混合,配置成溶膠,并通過旋涂鍍膜和退火熱處理的方法制備了具有一定光學性能和電學性能的AZO薄膜,討論了不同襯底,不同退火溫度、不同摻雜量、梯度摻雜、緩沖層對AZO薄膜結構形貌、光學性能和電學性能的影響。 實驗結果表明,硅襯底比玻璃襯底更利于制備具有c軸擇優(yōu)取向的高質(zhì)量AZO薄膜,且硅襯底上制備的AZO薄膜具有更低的電阻率。硅襯底上鋁摻雜量為1.0at%,退火溫度為600℃,退火時間為180min時,可以獲得具有優(yōu)異光學性能和電學性能的AZO薄膜,該薄膜的最低電阻率可達4.64×10-3Ω·cm,其尖銳的本征發(fā)光峰和近紫外發(fā)光峰也表明該薄膜具有較完整的晶體結構；AZO薄膜的透光率受退火溫度和摻雜濃度的影響不大,主要受薄膜厚度影響。隨鋁摻入量的增加,AZO薄膜的表面平整度下降,電導率下降,本征發(fā)光峰強度降低,可見光區(qū)發(fā)光峰強度明顯升高；但梯度摻雜的AZO薄膜表面平整度和均勻度有明顯提高,而且可以在較大的退火溫度區(qū)間內(nèi)獲得較穩(wěn)定的低電阻率,以及較強的本征發(fā)光峰；MgO緩沖層的加入使的具有優(yōu)異光學性能和電學性能的AZO薄膜更容易制備,明顯提高了薄膜的質(zhì)量,而且提高了所制備薄膜的穩(wěn)定性。室溫下ZnO的禁帶寬度為3.2eV,鋁的摻雜明顯提高了ZnO薄膜的禁帶寬度,AZO薄膜的禁帶寬度隨退火溫度的升高逐漸降低,隨鋁摻雜濃度的增加而逐漸升高。
[Abstract]:Aluminum-doped zinc oxide (AZO) thin film is a new wide band gap semiconductor material. Its transparent conductivity can be widely used to prepare transparent window materials for transparent electrodes and solar cells. The UV luminescent properties can be used in the preparation of UV detectors and laser. AZO thin films are magnetron sputtering. Chemical Vapor deposition (CVD) and sol-gel method. The preparation of large area uniform transparent conductive zinc oxide thin films with reproducibility and stability is a hot topic. In this thesis, sol-gel method is used as the preparation method. AZO thin films with high transmittance, low resistivity and certain photoluminescence properties were prepared. In this thesis, zinc acetate dihydrate was used as zinc source, aluminum chloride hexahydrate as aluminum source, ethylene glycol methyl ether as organic solvent, monoethanolamine as stabilizer, and then mixed into sol according to a certain proportion. AZO thin films with certain optical and electrical properties were prepared by spin-coating and annealing heat treatment. The structure and morphology of AZO thin films were discussed with different substrate, different annealing temperature, different doping amount, gradient doping and buffer layer. The influence of optical and electrical properties. The experimental results show that Si substrates are more favorable than glass substrates in the preparation of high quality AZO films with c-axis preferred orientation, and the AZO films prepared on Si substrates have lower resistivity. The Al doping amount on Si substrates is 1.0 atts. The annealing temperature is 600 鈩，

本文編號：1639917