本文選題：氧化鋅薄膜　切入點：超聲噴霧熱解法　出處：《大連工業(yè)大學(xué)》2011年碩士論文　論文類型：學(xué)位論文

【摘要】：本文介紹了ZnO的基本性質(zhì)及其應(yīng)用，論述了ZnO薄膜的制備方法及原理，綜述了ZnO薄膜研究的最新進(jìn)展。著重介紹ZnO及其摻雜薄膜在節(jié)能鍍膜玻璃和薄膜太陽電池方面的應(yīng)用，概括闡述了低輻射鍍膜玻璃和薄膜太陽電池用絨面結(jié)構(gòu)ZnO透明導(dǎo)電薄膜(ZnO-TCO)的發(fā)展概況、應(yīng)用原理及常用的制備方法等。 本實驗以六水合硝酸鋅（Zn(NO_3)_26H_2O）水溶液作為前驅(qū)體，使用自制的超聲噴霧熱解裝置在玻璃襯底上制備得到ZnO薄膜，利用X-射線衍射儀(XRD)、掃描電子顯微鏡（SEM)、表面形貌測量儀（DEKTAK6M）、紫外-可見光光譜儀(UV-Vis Spectrometer）等測試手段對ZnO薄膜的微觀結(jié)構(gòu)和光學(xué)性能進(jìn)行表征。本實驗研究了各種生長條件，例如前驅(qū)物溶液中Zn~(2+)濃度、沉積時間和襯底溫度等工藝參數(shù)對ZnO薄膜結(jié)構(gòu)和性能的影響。實驗結(jié)果表明，，適宜的襯底溫度、前驅(qū)體中Zn~(2+)濃度及合理的退火制度是制備出具有優(yōu)良的均勻性和致密性薄膜的關(guān)鍵因素。溫度上升有利于制備出c軸取向生長的ZnO薄膜，在500℃時，可以沉積出高質(zhì)量c軸擇優(yōu)取向的ZnO薄膜。當(dāng)前驅(qū)體溶液的濃度從0.1M增加到0.3M時，ZnO薄膜的結(jié)晶性能越來越好，c軸取向性也越來越大。但過高的前驅(qū)體溶液濃度和襯底溫度卻會降低薄膜的致密性。通過對紫外-可見光譜的分析，發(fā)現(xiàn)ZnO薄膜可見光區(qū)的透過率同ZnO的微觀結(jié)構(gòu)變化有關(guān)。在襯底溫度為500℃、前驅(qū)體溶液濃度為0.3M、沉積鍍膜時間30min、退火溫度500℃、退火時間60min條件下制備出的薄膜均勻致密，同時也具有良好的可見光透過率，可以達(dá)到90%，而在退火溫度為600℃時，薄膜具有較退火溫度為500℃時更加顯著地c軸擇優(yōu)取向，但由于薄膜表面氧空位缺陷的增多，使得透過率降為80%左右。
[Abstract]:In this paper, the basic properties and applications of ZnO are introduced, the preparation methods and principles of ZnO thin films are discussed, and the latest progress in the study of ZnO thin films is reviewed. The applications of ZnO and its doped films in energy-saving coating glass and thin film solar cells are emphatically introduced. The development, application principle and common preparation methods of ZnO transparent conductive thin film for low radiation coated glass and thin film solar cells are summarized. In this experiment, ZnO thin films were prepared on glass substrates with zinc nitrate hexahydrate (Zno _ 3) no _ 3H _ 2O _ (2) solution as precursor and a self-made ultrasonic spray pyrolysis device was used to prepare ZnO thin films on glass substrates. The microstructure and optical properties of ZnO thin films were characterized by means of X-ray diffractometer, scanning electron microscope (SEM), surface topography analyzer (DEKTAK6MN) and UV-Vis spectrometer (UV-Vis spectrometer). For example, the effects of the concentration of Zn~(2 in precursor solution, deposition time and substrate temperature on the structure and properties of ZnO thin films. The concentration of Zn~(2 in the precursor and the reasonable annealing system are the key factors for the preparation of ZnO thin films with excellent homogeneity and compactness. The increase of temperature is beneficial to the preparation of c-axis oriented ZnO films, and at 500 鈩

本文編號：1601583