本文選題：PECVD　切入點(diǎn)：硅基薄膜　出處：《汕頭大學(xué)》2010年碩士論文　論文類型：學(xué)位論文

【摘要】：硅基薄膜作為一類重要的光電功能材料,由于其獨(dú)特的性能,使其在新能源、信息顯示、光敏器件等高科技領(lǐng)域具有十分重要的應(yīng)用價(jià)值。當(dāng)前,氫化非晶硅(a-Si:H)薄膜已經(jīng)廣泛應(yīng)用于太陽能電池、液晶顯示等領(lǐng)域。但是由于其含有大量的缺陷態(tài)(主要是懸掛鍵),使其在實(shí)際應(yīng)用方面受到一定限制,其中最主要的問題是光致衰退效應(yīng)。各國(guó)研究人員經(jīng)過大量研究,逐漸認(rèn)識(shí)到氫對(duì)硅基薄膜的結(jié)構(gòu)和性能有非常重要的影響作用。一方面,氫以單氫化合物(Si-H)的方式與硅基薄膜相結(jié)合,起飽和薄膜中懸掛鍵的作用。這使得氫化非晶硅的缺陷態(tài)密度比未氫化的非晶硅大大降低,從而使其符合器件級(jí)材料的要求。另一方面,氫也以多氫化合物(Si-H2、Si-H3和(Si-H2)n)的方式與硅基薄膜相結(jié)合,從而引入新的缺陷,使帶隙中的局域態(tài)密度增大。在硅基薄膜的制備過程中,氫對(duì)薄膜的晶化有至關(guān)重要的作用,而薄膜的晶化又影響其光電性能,因此研究氫對(duì)硅基薄膜的作用具有十分重要的意義。 本文對(duì)采用PECVD系統(tǒng)制備的硅基薄膜進(jìn)行了光電性能的研究。本論文的研究?jī)?nèi)容主要由四大部分組成。第一,通過選擇不同襯底,設(shè)計(jì)不同工藝條件,制備不同結(jié)構(gòu)和性能的硅基薄膜；第二,通過傅立葉變換紅外透射譜對(duì)硅基薄膜的氫含量及其鍵合模式進(jìn)行分析；第三,通過紫外-可見光光透射譜研究硅基薄膜的光學(xué)性能；第四,通過靜電計(jì)分析研究硅基薄膜的電學(xué)性能。本論文中,我們著重研究了氫稀釋率對(duì)硅基薄膜生長(zhǎng)速率、氫含量及基鍵合模式影響,氫含量及其鍵合模式對(duì)薄膜光電性能結(jié)構(gòu)的影響。本論文也簡(jiǎn)單探討了鈉、鎂、鈣雜質(zhì)對(duì)硅基薄膜電學(xué)性能的影響。實(shí)驗(yàn)結(jié)果表明,在一定范圍內(nèi),隨著氫稀釋率的提高,硅基薄膜的生長(zhǎng)速率降低,氫含量增加,室溫暗電導(dǎo)率減小,電導(dǎo)激活能增大,光敏性變好。硅基薄膜中Si-H形式的氫含量增大時(shí),薄膜光學(xué)帶隙減小。硅基薄膜中的氫,尤其是Si-H形式的氫有助于提高硅基薄膜的光電性能。硅基薄膜由于鈉、鎂、鈣雜質(zhì)的進(jìn)入會(huì)導(dǎo)致其光敏性降低,暗電導(dǎo)率變大、電導(dǎo)激活能變小。
[Abstract]:As a kind of important optoelectronic functional material, silicon-based thin film has a very important application value in new energy, information display, Guang Min devices and other high-tech fields because of its unique properties. Hydrogenated amorphous silicon (a-Si: h) thin films have been widely used in solar cells, liquid crystal display and other fields. The most important problem is the photo-induced decay. After a lot of research, researchers in various countries have come to realize that hydrogen plays a very important role in the structure and properties of silicon-based films. Hydrogen acts as a hanging bond in the saturated film by combining with the silicon film in the form of a monohydrogen compound, which greatly reduces the density of the defect states of the hydrogenated amorphous silicon than that of the unhydrogenated amorphous silicon. On the other hand, hydrogen is also combined with silicon based thin films in the form of polyhydrogen compounds such as Si-H2OSi-H3 and Si-H2Ns, thus introducing new defects and increasing the local density of states in the band gap. Hydrogen plays an important role in the crystallization of thin films, and the crystallization of films affects their photoelectric properties. Therefore, it is of great significance to study the effect of hydrogen on silicon based films. In this paper, the optoelectronic properties of silicon based thin films prepared by PECVD system are studied. The research contents of this thesis are mainly composed of four parts. Firstly, by selecting different substrates, different process conditions are designed. Silicon based films with different structures and properties were prepared. Secondly, the hydrogen content and bonding mode of silicon based films were analyzed by Fourier transform infrared transmission spectroscopy. Thirdly, the optical properties of silicon based films were studied by UV-Vis optical transmission spectroscopy. In this paper, we focus on the effects of hydrogen dilution on the growth rate, hydrogen content and bonding mode of silicon based films. The effects of sodium, magnesium and calcium impurities on the electrical properties of silicon based films are also discussed in this paper. The experimental results show that in a certain range, with the increase of hydrogen dilution rate, the effect of sodium, magnesium and calcium impurities on the electrical properties of silicon based films is also discussed. The growth rate and hydrogen content of silicon based thin films decrease, the dark conductivity at room temperature decreases, the conductance activation energy increases, and Guang Min becomes better. The optical band gap decreases with the increase of hydrogen content in Si-H form in silicon based films, and the hydrogen content in silicon based thin films decreases. In particular, hydrogen in the form of Si-H can improve the optoelectronic properties of silicon based thin films. Due to the entry of sodium, magnesium and calcium impurities, the Guang Min property of silicon thin films will be reduced, the dark conductivity will become larger, and the activation energy of conductance will become smaller.
【學(xué)位授予單位】：汕頭大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類號(hào)】：TB383.2

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本文編號(hào)：1596698