本文選題：硅納米線　切入點(diǎn)：太陽能電池　出處：《大連理工大學(xué)》2011年碩士論文　論文類型：學(xué)位論文

【摘要】：納米結(jié)構(gòu)是當(dāng)今科學(xué)技術(shù)發(fā)展前沿中,極具發(fā)展前景的研究領(lǐng)域；硅材料在太陽能電池領(lǐng)域中應(yīng)用最為廣泛。因此,硅納米線作為一種新型的一維納米半導(dǎo)體材料,其新穎的光學(xué)和電學(xué)特性備受關(guān)注,而對硅納米線的研究也成為太陽能電池領(lǐng)域研究的熱點(diǎn)之一。 制備硅納米線的常用方法有：激光燒蝕法,化學(xué)氣相沉積法(CVD法)、氧化物輔助生長發(fā)、模板制備法、純化學(xué)腐蝕法等等；其中化學(xué)腐蝕方法操作簡單,設(shè)備要求低,比較適合制備一定數(shù)量的硅納米線。目前多采用以氫氟酸和硝酸銀溶液配制腐蝕溶液進(jìn)行制備,技術(shù)也比較成熟；對依據(jù)同一制備原理的硝酸鐵溶液刻蝕方法的研究則相對較少。而硝酸鐵的成本僅僅是硝酸銀的幾十分之一,如此低廉的成本優(yōu)勢,決定了采用硝酸鐵進(jìn)行化學(xué)刻蝕制備硅納米線具有重要的意義。 本論文對硅納米線的生長機(jī)理和制備方法進(jìn)行了研究。在大量摸索實(shí)驗(yàn)的基礎(chǔ)上,討論了采用氫氟酸與硝酸鐵腐蝕溶液進(jìn)行濕法刻蝕硅納米線的制備條件與范圍。通過掃描電子顯微鏡對在室溫下,不同腐蝕液濃度、不同腐蝕時(shí)間的樣品進(jìn)行檢測,得到了硅納米線的表面形貌。通過對樣品的表面形貌進(jìn)行分析,得出以下結(jié)論： 1)由實(shí)驗(yàn)得到的硅納米線的SEM圖像和數(shù)據(jù),我們得知在室溫25℃下,采用濃度為0.2mol/L的HF與10mol/L Fe(NO3)3溶液配制的腐蝕溶液進(jìn)行化學(xué)腐蝕45min,將得到形貌最好的硅納米線陣列結(jié)構(gòu)。在此最佳條件下制備的納米線陣列,取向一致,結(jié)構(gòu)均勻,納米線平均長度約為6μm,納米線直徑為100-300nm,減反射效果良好。經(jīng)測試分析,硅納米線的反射率可達(dá)到5%以下。 2)對比硝酸銀腐蝕溶液法制備硅納米線的SEM圖,硝酸鐵腐蝕溶液可制出長度可控、結(jié)構(gòu)均勻、質(zhì)量較好的硅納米線,并具有成本低廉的突出優(yōu)點(diǎn)。廉價(jià)的的硝酸鐵溶液刻蝕法制備硅納米線達(dá)到了很好的減反射目的,擁有很大的應(yīng)用潛力。 3)分析實(shí)驗(yàn)數(shù)據(jù)證明,在腐蝕溶液濃度一定的條件下,腐蝕時(shí)間越長,生成硅納米線的長度越長,生長越趨于均勻；但得到硅納米線反射率并非隨著納米線的增長,或者隨著刻蝕時(shí)間的加長而降低,當(dāng)腐蝕時(shí)間超過45min之后,反射率反而開始增大。因此在最佳腐蝕時(shí)間45min左右制得的硅納米線質(zhì)量最優(yōu)。
[Abstract]:Nanostructures are the most promising research fields in the development of science and technology. Silicon nanowires are widely used in solar cells. Therefore, silicon nanowires are a new type of one-dimensional nano-semiconductors. Its novel optical and electrical properties have attracted much attention, and the research of silicon nanowires has become one of the hotspots in the field of solar cells. The common methods of preparing silicon nanowires include laser ablation, chemical vapor deposition (CVD), oxide assisted growth, template preparation, pure chemical corrosion, etc. It is more suitable to prepare a certain number of silicon nanowires. At present, the corrosion solution prepared by hydrofluoric acid and silver nitrate solution is more mature. There is relatively little research on the etching method of iron nitrate solution based on the same preparation principle, and the cost of iron nitrate is only a few tens of that of silver nitrate, which is such a low cost advantage. It is of great significance to prepare silicon nanowires by chemical etching of iron nitrate. In this paper, the growth mechanism and preparation method of silicon nanowires are studied. The preparation conditions and range of wet etching silicon nanowires with hydrofluoric acid and iron nitrate corrosion solution were discussed. The samples with different concentration of corrosion solution and different corrosion time at room temperature were detected by scanning electron microscope. The surface morphology of silicon nanowires was obtained, and the following conclusions were obtained by analyzing the surface morphology of the samples:. 1) from the experimental SEM images and data of silicon nanowires, we know that at 25 鈩，

本文編號：1569675