本文關(guān)鍵詞： 金剛石薄膜 碳化鉻 復(fù)合中間層 粘附性 熱絲CVD　出處：《大連理工大學(xué)》2010年碩士論文　論文類型：學(xué)位論文

【摘要】： 化學(xué)氣相沉積(CVD)金剛石薄膜可以在多種基體上沉積,并且不受基體幾何形狀的限制,有廣泛的應(yīng)用前景。但是由于金剛石與基體的熱膨脹系數(shù)的差異很大,在冷卻過程中在金剛石薄膜與基體界面處的薄膜內(nèi)產(chǎn)生很大的切應(yīng)力,導(dǎo)致金剛石薄膜與基體的粘附性差,阻礙了CVD金剛石薄膜應(yīng)用。本文實(shí)驗(yàn)采用CH4與H2的混合氣體作為反應(yīng)氣源,鍍鉻鎢絲作為鉻源,用熱絲化學(xué)氣相沉積法制備金剛石—碳化鉻復(fù)合薄膜,把熱應(yīng)力分布到復(fù)合中間層,減小基體界面處金剛石薄膜內(nèi)的切應(yīng)力,提高金剛石薄膜與基體的結(jié)合強(qiáng)度,從根本上改善金剛石薄膜與基底的粘附性。 本文首先研究了蒸鉻的條件,沉積了Cr薄膜。然后在生長(zhǎng)金剛石的條件下沉積了碳化鉻薄膜,XRD分析表明,鉻的三種碳化物Cr3C2、Cr7C3與C23C6均有生成。實(shí)驗(yàn)中發(fā)現(xiàn)在氫氣-甲烷氣氛下,鉻表層被碳化鉻包覆不能連續(xù)蒸發(fā),經(jīng)過脫碳處理,可以實(shí)現(xiàn)間斷蒸鉻。通過對(duì)不同實(shí)驗(yàn)階段的鉻源的物相分析發(fā)現(xiàn)Cr3C2相的生成是導(dǎo)致鉻源難以蒸發(fā)的主要原因。 首次提出金剛石與碳化鉻在空間上交替生長(zhǎng)的方法：根據(jù)碳化鉻與金剛石生長(zhǎng)速度的差異實(shí)行短時(shí)間多次蒸鉻,長(zhǎng)時(shí)間多次生長(zhǎng)金剛石,通過控制蒸鉻量實(shí)現(xiàn)金剛石-碳化鉻兩相的交替生長(zhǎng),制備了金剛石-碳化鉻復(fù)合薄膜,并在金剛石-碳化鉻復(fù)合中間層上沉積了金剛石薄膜。用SEM、XRD對(duì)薄膜的表面形貌,物相進(jìn)行了分析。 本文在以下幾個(gè)方面有創(chuàng)新：首次把固體鉻引入熱絲化學(xué)氣相裝置,僅利用熱絲的熱輻射使鉻蒸發(fā)。據(jù)我們所知,這是首次用熱絲CVD成功制備Cr薄膜、碳化鉻薄膜和金剛石-碳化鉻復(fù)合薄膜。
[Abstract]:Chemical vapor deposition (CVD) diamond films can be deposited on a variety of substrates, and are not limited by the geometrical shape of the substrates, so they have a wide application prospect. However, the thermal expansion coefficients of diamond and substrates vary greatly. During the cooling process, great shear stress occurs in the interface between diamond film and substrate, which leads to poor adhesion between diamond film and substrate. In this paper, the mixture gas of CH4 and H2 was used as the reaction gas source, the chromium-tungsten wire as the chromium source, and the hot-filament chemical vapor deposition method to prepare the diamond-chromium carbide composite film. The thermal stress is distributed to the composite interlayer to reduce the shear stress in the diamond film at the interface of the substrate, to improve the bonding strength between the diamond film and the substrate, and to improve the adhesion of the diamond film to the substrate. In this paper, the conditions of chromium evaporation were studied, Cr thin films were deposited. XRD analysis showed that the three carbides Cr _ 3C _ 2o _ (Cr _ 7C _ 3) and C _ (23) C _ 6 were formed under the condition of diamond growth. It was found that Cr _ 3C _ (2) C _ (3) and C _ (23) C _ (6) were formed in hydrogen methane atmosphere. The discontinuous evaporation of chromium can be realized by decarbonization, and the formation of Cr3C2 phase is the main reason that lead to the difficulty of evaporation of chromium source through the phase analysis of chromium source in different experimental stages. It is the first time to put forward the method of alternating growth of diamond and chromium carbide in space: according to the difference of growth speed between chromium carbide and diamond, short time and many times steam chromium, long time and many times growth diamond, The diamond-chromium carbide composite film was prepared by controlling the amount of chromium-vaporizing, and the diamond film was deposited on the diamond-chromium carbide composite interlayer. The surface morphology of the film was studied by means of SEMX XRD. The phase was analyzed. This paper has some innovations in the following aspects: for the first time, the solid chromium is introduced into the hot filament chemical vapor device and the chromium is evaporated only by the heat radiation of the hot filament. As far as we know, this is the first time that Cr thin films have been successfully prepared with hot filament CVD. Chromium carbide film and diamond-chromium carbide composite film.
【學(xué)位授予單位】：大連理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2010
【分類號(hào)】：TB383.2

【引證文獻(xiàn)】

相關(guān)碩士學(xué)位論文 前1條

1 黃自強(qiáng);制備CVD金剛石涂層硬質(zhì)合金刀具中間層的研究[D];大連理工大學(xué);2012年

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本文編號(hào)：1544669