本文關(guān)鍵詞： 非晶硅薄膜 PECVD 沉積速率 組態(tài)　出處：《河北工業(yè)大學(xué)》2010年碩士論文　論文類型：學(xué)位論文

【摘要】：環(huán)境污染和能源危機(jī)是現(xiàn)代社會面臨的嚴(yán)峻問題，太陽能作為可再生的清潔能源使得太陽能電池的研究日益重要。非晶硅薄膜太陽能電池已經(jīng)成為光伏領(lǐng)域的熱點(diǎn)，廉價襯底的引入使其在成本方面具有更強(qiáng)的市場競爭力。非晶硅薄膜近年來也得到了廣泛的研究。 本文采用等離子體增強(qiáng)化學(xué)氣相沉積(PECVD)設(shè)備，以SiH4和H2為氣源，分別在玻璃片、單晶硅片、不銹鋼片襯底上制備了非晶硅薄膜。采用XRD、Raman、SEM、FTIR等分析技術(shù)研究了硅烷濃度、襯底溫度、射頻功率、沉積氣壓等工藝參數(shù)對薄膜生長速率、結(jié)構(gòu)、組態(tài)和表面形貌的影響。 實(shí)驗結(jié)果表明，玻璃襯底上非晶硅薄膜的沉積速率隨硅烷濃度的增加、襯底溫度的升高、射頻功率和沉積氣壓的增大而增加。當(dāng)硅烷濃度從3%增加到5%時，沉積速率增幅是最大的，當(dāng)硅烷濃度由低到高變化時，薄膜結(jié)構(gòu)中的SiH、SiH2組態(tài)轉(zhuǎn)變?yōu)镾iH組態(tài)；當(dāng)襯底溫度從300℃升高到350℃時，沉積速率提高最快，當(dāng)襯底溫度由低到高變化時，薄膜結(jié)構(gòu)中的SiH、SiH2組態(tài)轉(zhuǎn)變?yōu)镾iH組態(tài)；當(dāng)射頻功率從40W增大到70W時，，沉積速率增長最快，當(dāng)射頻功率由低到高變化時，薄膜結(jié)構(gòu)中的SiH組態(tài)轉(zhuǎn)變?yōu)镾iH、SiH2組態(tài)；當(dāng)沉積氣壓從80Pa增大到100Pa時，沉積速率提高最快，當(dāng)沉積氣壓由低到高變化時，薄膜結(jié)構(gòu)中的SiH、SiH2組態(tài)轉(zhuǎn)變?yōu)镾iH組態(tài)。通過實(shí)驗得到了利用現(xiàn)有設(shè)備生長非晶硅薄膜的優(yōu)化工藝參數(shù)。襯底材料的不同對薄膜的表面形貌有很大影響，玻璃和硅片上的薄膜表面較平整均勻，不銹鋼片上的薄膜表面很粗糙。
[Abstract]:Environmental pollution and energy crisis are serious problems in modern society. Solar energy as a renewable clean energy makes the research of solar cells increasingly important. Amorphous silicon thin film solar cells have become a hot spot in the field of photovoltaic. The introduction of cheap substrates makes them more competitive in the market cost, and amorphous silicon thin films have been widely studied in recent years. In this paper, the plasma enhanced chemical vapor deposition (PECVD) equipment is used. SiH4 and H2 are used as gas source on glass and single crystal silicon, respectively. Amorphous silicon thin films were prepared on stainless steel substrates. The concentration of silane, substrate temperature and RF power were studied by using XRDX Ramanine SEMIR and FTIR techniques. The effect of deposition pressure on the growth rate, structure, configuration and surface morphology of the films. The experimental results show that the deposition rate of amorphous silicon films on glass substrates increases with the increase of silane concentration and substrate temperature. When the concentration of silane increased from 3% to 5, the increase of deposition rate was the largest. When the concentration of silane changed from low to high, the SiH in the film structure was increased. SiH2 configuration changed to SiH configuration; When the substrate temperature is raised from 300 鈩

本文編號：1484601