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基于硅酸鎵鑭的聲表面波高溫壓力傳感器研究

發(fā)布時間:2018-10-31 08:33
【摘要】:為實現(xiàn)高溫環(huán)境下壓力測量,研究了一種基于LGS(硅酸鎵鑭)材料的SAW(聲表面波)高溫壓力傳感器,理論上將電彈微擾理論與有限元方法相結(jié)合,使用有限元方法仿真計算壓力作用下LGS壓電基片的應(yīng)力、應(yīng)變場,并利用該應(yīng)力應(yīng)變結(jié)果,求解得到LGS壓電基片在溫度偏載條件以及壓力擾動條件下的有效材料常數(shù)和附加材料常數(shù),再利用得到的材料常數(shù)應(yīng)用于疊加偏載的電彈微擾方程,求解得到LGS基片上SAW的頻率變化,從而得到LGS壓電基片的壓力靈敏度fpDK。根據(jù)對300℃條件下(0,0,X)切向的LGS壓電基片上各SAW傳播方向所對應(yīng)的壓力靈敏度進(jìn)行求解,選擇LGS基片歐拉角為(0,0,90),其理論雙通道壓力靈敏度為278ppm/MPa;谏鲜隼碚摲治,制作了一種基于LGS(0,0,90)的耐高溫點壓式壓力傳遞結(jié)構(gòu)的SAW傳感器,并搭建高溫壓力傳感器測試環(huán)境,在-55℃至320℃溫度范圍內(nèi)測試分析該傳感器的壓力響應(yīng),實驗結(jié)果與理論分析較好的吻合。
[Abstract]:In order to realize pressure measurement in high temperature environment, a SAW (surface acoustic wave) high temperature pressure sensor based on LGS (lanthanum gallium silicate) is studied. The theory of electroelastic perturbation is combined with finite element method. The stress and strain fields of LGS piezoelectric substrates under pressure are simulated by finite element method, and the results of stress and strain are used. The effective material constant and the additional material constant of LGS piezoelectric substrate under the condition of temperature bias and pressure disturbance are obtained. The obtained material constant is applied to the electroelastic perturbation equation of superposition bias load. The frequency variation of SAW on the LGS substrate is obtained by solving, and the pressure sensitivity fpDK. of the LGS piezoelectric substrate is obtained. According to the pressure sensitivity corresponding to the SAW propagation direction on the tangential LGS piezoelectric substrate at 300 鈩,

本文編號:2301529

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