本文選題：硅納米線 + 壓阻系數(shù)��； 參考：《中北大學(xué)》2017年碩士論文

【摘要】：慣性器件由MEMS向NEMS發(fā)展,器件敏感結(jié)構(gòu)尺寸由微米級(jí)向納米級(jí)轉(zhuǎn)變,壓阻效應(yīng)的靈敏度接近了檢測(cè)的極限,進(jìn)一步提高靈敏度已非常困難,但是壓敏電阻尺寸達(dá)到納米量級(jí)時(shí),其受到拉伸時(shí)電阻值發(fā)生巨大變化,可以在硅納米線等材料中觀察到。壓阻效應(yīng)的大小體現(xiàn)于壓阻系數(shù)之上,硅納米線壓阻系數(shù)比常規(guī)硅壓阻系數(shù)高兩個(gè)數(shù)量級(jí),微小型化程度高,優(yōu)勢(shì)突出。影響壓阻系數(shù)的因素有摻雜濃度和幾何尺寸,本文基于此對(duì)硅納米線壓阻系數(shù)尺度效應(yīng)展開了研究,對(duì)不同摻雜濃度、不同尺度下的硅納米線進(jìn)行模擬仿真,并建立了壓阻系數(shù)尺度模型,結(jié)果顯示:硅納米線壓阻系數(shù)隨著摻雜濃度增大而減小;硅納米線壓阻系數(shù)隨著長(zhǎng)度的增加而緩慢增大;硅納米線壓阻系數(shù)隨著寬度(或截面積的增大)而劇烈減小。本文對(duì)文獻(xiàn)中報(bào)道的實(shí)際制備的硅納米線的尺寸進(jìn)行模擬仿真,與測(cè)試結(jié)果進(jìn)行了比對(duì)與分析,一定程度上驗(yàn)證了模型的正確性;通過與本組實(shí)際制備的的硅納米線的尺寸進(jìn)行模擬仿真,并與本組實(shí)測(cè)結(jié)果進(jìn)行對(duì)比分析,發(fā)現(xiàn)本模型存在一定誤差,有繼續(xù)深入研究的必要性。通過本文的尺度建模研究,給以后實(shí)際加工提供理論支撐,有助于將硅納米線用于各類納米力敏傳感器中,解決不斷微型化過程中的高靈敏難題,對(duì)進(jìn)一步提高力敏器件應(yīng)用基礎(chǔ)研究具有重要意義。
[Abstract]:With the development of inertial device from MEMS to NEMS, the sensitive structure size of the device changes from micron to nanometer. The sensitivity of piezoresistive effect is close to the detection limit, so it is very difficult to improve the sensitivity further, but when the size of varistor reaches nanometer order, The resistance value changes greatly when it is stretched and can be observed in silicon nanowires and other materials. The piezoresistive effect is reflected in the piezoresistive coefficient. The piezoresistive coefficient of silicon nanowires is two orders of magnitude higher than that of the conventional silicon piezoresistive coefficient. The influence factors of piezoresistive coefficient are doping concentration and geometric dimension. Based on this, the scale effect of piezoresistive coefficient of silicon nanowires is studied, and the simulation of silicon nanowires with different doping concentrations and different scales is carried out. The results show that the piezoresistive coefficient of silicon nanowires decreases with the increase of doping concentration, and the piezoresistive coefficient of silicon nanowires increases slowly with the increase of length. The piezoresistive coefficient of silicon nanowires decreases sharply with the increase of width (or cross section area). In this paper, the size of the silicon nanowires reported in the literature is simulated and compared with the test results, and the correctness of the model is verified to a certain extent. By simulating the size of silicon nanowires and comparing with the measured results, it is found that there are some errors in this model, and it is necessary to further study the model. Through the scale modeling research in this paper, it provides theoretical support for practical processing, and helps to use silicon nanowires in various kinds of nanoscale force sensors to solve the problem of high sensitivity in the process of continuous miniaturization. It is of great significance to further improve the basic research on the application of force sensitive devices.
【學(xué)位授予單位】：中北大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TB383.1;TP212

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本文編號(hào)：1820354