【摘要】：60GHz毫米波通信技術因其高速傳輸傳輸速率和巨大的可用帶寬廣泛吸引了人們的廣泛關注,被譽為未來10年內最具研究價值的通信技術。相比于國外對60GHz技術的較成熟的開發(fā),國內對60GHz系統(tǒng)的容量與性能等理論知識還處于基本空白狀態(tài),因此,有著巨大的可提升的發(fā)展空間。60GHz通信技術將逐漸的步入未來的無線通信領域中去。本文主要采用混合集成電路的形式對V波段的變頻電路進行了設計和加工。我們對60GHz的毫米波的特點進行了初步分析,結合國內外發(fā)展動態(tài)以及本課題給出的指標,完成了以下幾個方面的基本工作:第二章中,首先介紹了毫米波電路的指標,并對其進行初步分析,設計了幾種不同的方案,然后根據實際情況,確定了最終的方案。第三章中,首先介紹了波導-微帶探針過渡的基本原理,并對5mm探針過渡背靠背模式進行了仿真、加工和測試,得到的結果滿足指標要求。然后對射頻電路上用到的各種固態(tài)元器件(毫米波低噪聲放大器、毫米波開關、)以及無源器件(毫米波濾波器)的基本原理和主要的技術指標進行了分析,并按照課題選用了合適的毫米波芯片,對V波段低噪放芯片進行了單獨的加工和測試,了解了其正常工作時的技術指標。設計了2個不同頻段的鏡頻抑制濾波器,并對單個濾波器進行了仿真加工和測試,結果基本滿足指標要求。第四章中,介紹了本振電路中使用到的倍頻器、混頻器的基本原理,分析了主要的技術指標,并對微帶線的基本理論和毫米波電路裝配技術進行了初步介紹。第五章中,對中頻電路上使用的帶通濾波器以及中頻放大器的原理進行了分析和介紹,設計了中心頻率在3-5GHz的交指型帶通濾波器,并對其進行了仿真加工和測試,結果符合預期的指標。第六章中,根據指標,對電路整體進行了分析,最終確定了毫米波變頻器的腔體和射頻以及中頻微帶電路,初步介紹了電磁兼容的方法,并對整體電路進行加工、裝配、測試以及最終的調試,得到了最后結果。最后,分析了整體電路的最終測試結果,提出了下一步進行改進的方法。
[Abstract]:60GHz millimeter wave communication technology has attracted extensive attention because of its high-speed transmission rate and huge available bandwidth. It is regarded as the most valuable communication technology in the next 10 years. Compared with the mature development of 60GHz technology abroad, the domestic theoretical knowledge of 60GHz system capacity and performance is still in the basic blank state, so, 60 GHz communication technology will step into the future wireless communication field. In this paper, the V-band frequency conversion circuit is designed and fabricated in the form of hybrid integrated circuit. We have carried on the preliminary analysis to the millimeter wave characteristic of the 60GHz, combined with the domestic and foreign development trends and the indicators given in this paper, have completed the following basic work: in the second chapter, first introduced the millimeter wave circuit index, After the preliminary analysis, several different schemes are designed, and then the final scheme is determined according to the actual situation. In the third chapter, the basic principle of waveguide-microstrip probe transition is introduced, and the 5mm probe transition back-to-back mode is simulated, processed and tested. Then the basic principles and main technical specifications of various solid-state components (millimeter-wave low noise amplifier, millimeter-wave switch) and passive devices (millimeter-wave filter) used in RF circuits are analyzed. A suitable millimeter-wave chip is selected to process and test the V-band low-noise amplifier chip separately, and the technical index of V-band low-noise amplifier is understood. Two mirror frequency suppression filters with different frequency bands are designed, and a single filter is simulated and tested. The results basically meet the requirements of the index. In chapter 4, the basic principle of frequency multiplier and mixer used in local oscillator circuit is introduced, the main technical indexes are analyzed, and the basic theory of microstrip line and millimeter-wave circuit assembly technology are introduced. In the fifth chapter, the principle of the band-pass filter and if amplifier used in the if circuit is analyzed and introduced, and the InterDigital Bandpass filter with the center frequency in 3-5GHz is designed, and the simulation processing and testing are carried out. The results were in line with the expected indicators. In the sixth chapter, according to the index, the whole circuit is analyzed, and the cavity, RF and if microstrip circuit of millimeter wave frequency converter are determined, and the electromagnetic compatibility method is introduced preliminarily, and the whole circuit is processed and assembled. Testing and final debugging, the final results are obtained. Finally, the final test results of the whole circuit are analyzed, and the method to improve the whole circuit is put forward.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN928
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本文編號：2463652