本文選題：溝道界面 + 漏電流�。� 參考：《液晶與顯示》2017年06期

【摘要】：本文對Mo/Al/Mo作為TFT-LCD器件源/漏極的TFT特性進行了研究。與單層Mo相比,存在溝道界面粗糙,I_(off)偏大問題,通過優(yōu)化膜層結(jié)構(gòu),改善界面狀態(tài),得到了平整的溝道界面和良好的TFT特性。增加Bottom Mo的厚度,可以有效減少Al的滲透,防止Al-Si化合物的形成,得到界面平整的溝道;N~+刻蝕后SF6處理對特性影響不大,增加刻蝕時間可以使I_(on)和I_(off)同時降低;PVX沉積前處理氣體N_2+NH_3與H_2區(qū)別不大,都可以減少溝道缺陷,而增加H_2處理時間會增強等離子的轟擊作用,減少了溝道表面Al-Si化合物,但處理時間過長可能會使溝道缺陷增加;采用bottom Mo加厚,N~+刻蝕以及PVX沉積前處理等最優(yōu)條件,可以得到溝道界面良好,TFT特性與單層Mo相當?shù)腡FT器件。
[Abstract]:In this paper, the TFT characteristics of Mo/Al/Mo as the source / drain of TFT-LCD devices are studied. Compared with monolayer Mo, there is a big problem of rough channel interface. By optimizing the structure of the film layer and improving the interface state, the smooth channel interface and good TFT characteristics are obtained. Increasing the thickness of Bottom Mo can effectively reduce the infiltration of Al and prevent the formation of Al-Si compounds. The formation of Al-Si compounds can be prevented by increasing the thickness of Bottom Mo. The effect of SF6 treatment on the properties is not significant after the channel N ~ (+) etching with flat interface is obtained. Increasing the etch time can make I _ stack) and I _ _ _ (_ _ _ However, if the processing time is too long, the channel defects may be increased, and the TFT devices with good channel interface and monolayer Mo can be obtained by using the optimum conditions such as bottom Mo thickening N ~ + etching and PVX deposition pre-treatment.
【作者單位】： 北京京東方光電科技有限公司;
【分類號】：TN873.93
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本文編號：1779798