光配向PI固烤時(shí)間與曝光能量對(duì)LCD光學(xué)及殘影的影響
發(fā)布時(shí)間:2018-03-31 06:28
本文選題:光配向 切入點(diǎn):固烤時(shí)間 出處:《液晶與顯示》2017年08期
【摘要】:采用光配向技術(shù)使PI獲得配向能力并制得IPS型LCD,通過AOI光學(xué)自動(dòng)檢測設(shè)備以及DMS光學(xué)測量系統(tǒng)對(duì)在不同PI固烤時(shí)間和UV曝光能量下獲得樣品的預(yù)傾角、對(duì)比度及穿透率進(jìn)行了量測,并研究了各條件下樣品的殘影(Image Sticking)性能。結(jié)果顯示:在900~2 700s,400~600mJ/cm~2范圍內(nèi),固烤時(shí)間和曝光能量對(duì)LCD光學(xué)性能影響較小,但對(duì)殘影性能影響較大,IS隨曝光量增大有惡化的趨勢,且該趨勢在高亞胺化程度下趨于平緩;調(diào)整固烤時(shí)間及曝光能量可以獲得較佳的殘影性能,固烤時(shí)間1 800s,曝光能量400~500mJ/cm~2條件的LCD殘影性能較佳。
[Abstract]:The IPS type LCD was obtained by using the optical matching technique. The predip angle of the sample was obtained under different Pi curing time and UV exposure energy by the AOI optical automatic detection equipment and the DMS optical measurement system. The contrast and penetration were measured, and the residual image Sticking properties of the samples were studied under various conditions. The results showed that in the range of 900U 2 700sL 400mJ / cm ~ (2), the effect of curing time and exposure energy on the optical properties of LCD was relatively small. However, it has a tendency to deteriorate with the increase of exposure, and the trend tends to be gentle under the high imidization degree, and the better residual image performance can be obtained by adjusting the curing time and exposure energy. Solid baking time 1 800 s, exposure energy 400~500mJ/cm~2 condition of LCD residual performance is better.
【作者單位】: 昆山龍騰光電有限公司;
【分類號(hào)】:TN873
,
本文編號(hào):1689555
本文鏈接:http://sikaile.net/kejilunwen/xinxigongchenglunwen/1689555.html
最近更新
教材專著