本文選題：磁絕緣感應(yīng)電壓疊加器　切入點：次級阻抗　出處：《物理學(xué)報》2017年20期

【摘要】：磁絕緣感應(yīng)電壓疊加器(MIVA)次級阻抗對脈沖功率驅(qū)動源和負(fù)載之間的功率耦合具有重要影響.基于穩(wěn)態(tài)磁絕緣Creedon層流理論和鞘層電子流再俘獲(re-trapping)理論,建立了負(fù)載欠匹配型MIVA電路分析方法,數(shù)值分析獲得了MIVA輸出參數(shù)(輸出電壓、陰/陽極電流和電功率)隨負(fù)載欠匹配程度的變化規(guī)律.考慮陰極傳導(dǎo)電流作為閃光X射線照相二極管的有效電流,建立了以MIVA末端X射線劑量率最大為目標(biāo)的次級阻抗優(yōu)化方法.獲得了欠匹配型MIVA次級優(yōu)化阻抗Z_(op)~*的變化規(guī)律:隨著X射線劑量率對電壓依賴程度提高,欠匹配型MIVA次級優(yōu)化阻抗Z_(op)~*呈指數(shù)降低;負(fù)載阻抗越大,Z_(op)~*越大.
[Abstract]:The secondary impedance of the magnetically insulated inductive voltage superposition (MIVA) has an important effect on the power coupling between the pulse power drive source and the load.Based on the theory of steady-state magnetically insulated Creedon laminar flow and sheath electron flow retrapping theory, a load under-matched MIVA circuit analysis method is established. The output parameters (output voltage) of MIVA are obtained by numerical analysis.The variation of negative / anode current and power with the undermatching of load.Considering cathode conduction current as the effective current of flash X-ray diode, a secondary impedance optimization method aiming at the maximum dose rate of X-ray at the end of MIVA is established.The variation rule of under-matched MIVA secondary optimal impedance Zaphe is obtained: with the increase of the dependence of X-ray dose rate on voltage, the under-matched MIVA secondary optimal impedance Zapi decreases exponentially, and the larger the load impedance is, the greater the load impedance is.
【作者單位】： 西安交通大學(xué)電力設(shè)備電氣絕緣國家重點實驗室;西北核技術(shù)研究所強脈沖輻射環(huán)境模擬與效應(yīng)國家重點實驗室;
【基金】：國家自然科學(xué)基金(批準(zhǔn)號:11505138,51577156)資助的課題~~
【分類號】：TN782;TN811

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