本文選題：PS-VA　切入點(diǎn)：殘像　出處：《液晶與顯示》2017年10期

【摘要】：PSVA技術(shù)已經(jīng)廣泛應(yīng)用于電視技術(shù),但是殘像問(wèn)題仍然沒(méi)有解決,為了改善PS-VA電視屏的IS表現(xiàn),本文通過(guò)UV1和UV2制程影響RM來(lái)研究RM的殘留量與IS表現(xiàn)的關(guān)系,結(jié)果表明RM殘留量和IS有很強(qiáng)的相關(guān)性。眾所周知,離子濃度是IS問(wèn)題的關(guān)鍵因素,基于分析RM殘留量和離子濃度的關(guān)系,我們開(kāi)了一種改善PS-VA模式IS問(wèn)題的新技術(shù),另外,本文提出通過(guò)設(shè)計(jì)新的母體混晶材料,使PS-VA制程后液晶具有更低RM殘留量來(lái)改善IS問(wèn)題,同時(shí)通過(guò)大量的測(cè)試數(shù)據(jù)驗(yàn)證改善效果,其中離子濃度由Toyo6254測(cè)試,通過(guò)SEM和AFM來(lái)分析表面形態(tài)。
[Abstract]:PSVA technology has been widely used in television technology, but the problem of residual image has not been solved. In order to improve the is performance of PS-VA TV screen, this paper studies the relationship between RM residue and is performance by UV1 and UV2 process. The results show that there is a strong correlation between RM residue and is. As we all know, ion concentration is the key factor of is problem. Based on the analysis of the relationship between RM residue and ion concentration, we have developed a new technique to improve the is problem of PS-VA mode. In this paper, we propose to improve the is problem by designing a new matrix mixed crystal material so that the liquid crystal after PS-VA process has lower RM residue. At the same time, the improvement effect is verified by a large number of test data, in which the ion concentration is measured by Toyo6254. Surface morphology was analyzed by SEM and AFM.
【作者單位】： 河北省平板顯示材料工程技術(shù)研究中心/石家莊誠(chéng)志永華顯示材料有限公司;深圳華星光電技術(shù)有限公司;
【分類號(hào)】：TN873

【相似文獻(xiàn)】

相關(guān)期刊論文 前3條

1 海豚;;用手機(jī)欣賞大片——RM格式電影制作[J];電腦愛(ài)好者(普及版);2008年08期

2 安亞軍;將RM一450CE編輯控制器由2對(duì)1升檔為3對(duì)1編輯控制器[J];有線電視技術(shù);1999年02期

3 士心;;直播RM 三星YP-CP3[J];數(shù)碼先鋒;2009年10期

，

本文編號(hào)：1683416