拓?fù)涓拍畹囊霕O大地豐富了傳統(tǒng)的凝聚態(tài)物理。從體材料角度,根據(jù)能帶拓?fù)鋽?shù)對(duì)物質(zhì)態(tài)進(jìn)行分類的標(biāo)準(zhǔn)被引入,量子霍爾效應(yīng)、量子反�；魻栃�(yīng)、拓?fù)浣^緣體等新物質(zhì)態(tài)被提出,超越了傳統(tǒng)的朗道范式,并且其在金屬領(lǐng)域的推廣不僅解釋了反常/自旋霍爾效應(yīng),還引出了外爾半金屬這一物質(zhì)態(tài);在有限尺寸體系中,絕緣體的拓?fù)湫泽w現(xiàn)在魯棒的金屬性邊界態(tài)上,提供了一種難以被雜質(zhì)散射的低維、低能量耗散電子態(tài);雖然拓?fù)湫詫?duì)材料的細(xì)節(jié)特性不敏感,然而,不同的拓?fù)浣缑鎽B(tài)呈現(xiàn)出一些依賴于材料特性的電子、自旋輸運(yùn)行為,為基礎(chǔ)研究和實(shí)際應(yīng)用提供了很好的平臺(tái)。本論文中,我們發(fā)現(xiàn)了一種朗道對(duì)稱破缺協(xié)助產(chǎn)生的新拓?fù)湮镔|(zhì)態(tài)的跡象,即電荷密度波協(xié)助產(chǎn)生的三維量子霍爾效應(yīng)（第一章）,提出兩種實(shí)現(xiàn)量子反�；魻栃�(yīng)的新機(jī)制,一者基于面內(nèi)磁化,二者由庫(kù)侖相互作用誘導(dǎo)產(chǎn)生（第二、三章）,研究了基于量子谷霍爾效應(yīng)和量子反常霍爾效應(yīng)的拓?fù)浣缑鎽B(tài)的輸運(yùn)特性（第四章）,并構(gòu)造過(guò)渡金屬單原子層的模型哈密頓量,為后續(xù)研究其輸運(yùn)特性打下基礎(chǔ)（第五章）。引入拓?fù)涓拍畹淖钪匾囊蛩刂皇橇孔踊魻栃?yīng)的發(fā)現(xiàn),為了解釋這一現(xiàn)象而提出的各種理論成為后續(xù)拓?fù)淠軒Ю碚摰幕A(chǔ)。因此... 

【文章頁(yè)數(shù)】：151 頁(yè)

【學(xué)位級(jí)別】：博士

【文章目錄】：
摘要
ABSTRACT
Nomenclature
Chapter 1 Introduction
    1.1 Quantum Hall Effect (QHE)
        1.1.1 Landau levels
        1.1.2 Pumping
        1.1.3 Edge States
        1.1.4 Periodic Potential
    1.2 Topological Phases in Atomic Crystal Layers
        1.2.1 Honeycomb Lattice and the Haldane Model
        1.2.2 Haldane's Model with Spin: Graphene as Topological Insulator (TI)
    1.3 Three-dimensional (3D) Topological Phases
        1.3.1 3D TI
        1.3.2 3D QHE
Chapter 2 QAHE from In-plane Magnetization
    2.1 Review of QAHE from Out-of-plane Magnetization
        2.1.1 Graphene with Magnetism and Rashba Spin-orbit Coupling (SOC)
        2.1.2 3D-TI Thin Films with Magnetic Doping
    2.2 Symmetry Difference: Out-of-plane vs In-plane Magnetization
    2.3 Buckled Lattices of Group-IV Elements
        2.3.1 Tight-binding Hamiltonian
        2.3.2 Monolayer Case
        2.3.3 Multilayer Cases
    2.4 Buckled Lattice of Group-V Elements
        2.4.1 Model and Electronic Structure
        2.4.2 Role of SOC Strength on Topological Phases
        2.4.3 Role of Out-of-plane Component of Magnetization and Strain
    2.5 Summary and Outlook
Chapter 3 Valley Engineering and Spontaneous QAHE
    3.1 Inter-valley Coupling
        3.1.1 Superlattice with C_(3v) Symmetry and Quadratic Band Crossing
        3.1.2 Superlattices with C_(6v) and C_(2v) Symmetries
        3.1.3 Generalized Effective Hamiltonian from Symmetry Analysis
    3.2 Quadratic Band Crossing with Coulomb Interaction
        3.2.1 Instability of Fermi Point Driven by Interaction
        3.2.2 Quadratic Band Crossing on Kagome Lattice Model
        3.2.3 Spontaneous QAHE Driven by Interaction
        3.2.4 Phase Transition
    3.3 Summary and Outlook
Chapter 4 Zero-line Mode (ZLM)
    4.1 Review of ZLM Based on QVHE
        4.1.1 Electronic Structures
        4.1.2 Electronic Transport Properties of Topological ZLMs
    4.2 ZLM from QAHE with Out-of-plane Magnetization
        4.2.1 Motivation
        4.2.2 Electronic Structures
        4.2.3 Electronic Transport Properties
    4.3 ZLMs from QAHE with In-plane Magnetization
        4.3.1 Motivation
        4.3.2 Model and Electronic Structure of ZLMs
        4.3.3 Current Partition at Y-shape Junction
        4.3.4 Network and Flat Bands
    4.4 Summary and Outlook
Chapter 5 Electronic Structures of Transition Metal Monolayers
    5.1 Introduction
    5.2 Model and Formalism
        5.2.1 Tight-binding Model
        5.2.2 First-principles Calculations
    5.3 Energy Bands and Fitting Parameters
        5.3.1 Lattice Constants
        5.3.2 3d Transition-metal Monolayers
        5.3.3 5d Transition-metal Monolayers
    5.4 Fitting Method and Fitting Results
        5.4.1 Nonlinear Fitting
        5.4.2 Summarize of the Fitting Results
    5.5 Summary and Outlook
Chapter 6 Summary and Discussion
References
致謝
Publications


【參考文獻(xiàn)】：
期刊論文
[1]A review of the growth and structures of silicene on Ag（111）[J]. 吳克輝.  Chinese Physics B. 2015(08)



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