Spin dynamics in several different types of ferromagnetic metal（FM）/10-nm-thick n-type GaAs quantum well（QW） junctions is studied by means of time-resolved Kerr rotation measurements. Compared with the MnGa/insitu doped 10-nm-thick n-type GaAs QW junction, the spin lifetime of the MnGa/modulation-doped 10-nm-thick n-type GaAs QW junction is shorter by a factor of 5,consistent with the D’yakonov-Pcrel’ spin relaxation mechanism. Meanwhile, compared with the spin lifetime of the MnAs/in-situ doped... 

【文章來(lái)源】：Chinese Physics Letters. 2017,34(11)SCICSCD

【文章頁(yè)數(shù)】：5 頁(yè)


本文編號(hào)：3395455