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Electrical property effect of oxygen vacancies in the hetero

發(fā)布時間:2021-02-11 15:10
  Density functional theory within the local density approximation is used to investigate the effect of the oxygen vacancy on the LaGaO3/SrTiO3(001) heterojunction. It is found that the energy favorable configuration is the oxygen vacancy located at the 3rd layer of the STO substrate, and the antiferrodistortive distortion is induced by the oxygen vacancy introduced on the SrTiO3 side. Compared with the heterojunction without introducing oxygen vacancy, ... 

【文章來源】:Chinese Physics B. 2017,26(03)

【文章頁數(shù)】:5 頁


本文編號:3029299

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