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低閾值單橫模852nm半導(dǎo)體激光器

發(fā)布時間:2019-06-10 01:38
【摘要】:基于波導(dǎo)理論、等效折射率方法,設(shè)計并制備了非對稱波導(dǎo)隔離雙溝結(jié)構(gòu)脊型邊發(fā)射激光器,最終獲得了低閩值單基側(cè)模852 nm激光器.詳細(xì)研究了不同脊型臺深寬比參數(shù)設(shè)計對激光器側(cè)向模式特性的影響規(guī)律,實現(xiàn)了腔面未鍍膜情況下脊型波導(dǎo)邊發(fā)射激光器的單基側(cè)模穩(wěn)定輸出,同時激射波長可以精確調(diào)諧到852 nm;工作電流達到150 mA,工作溫度30℃;斜率效率最高可達0.89 nW/mA,光譜半寬小于1 nm.研究結(jié)果為進一步實現(xiàn)超窄線寬激光器提供了參考和借鑒,并且為實現(xiàn)激光器穩(wěn)定輸出提供了實驗基礎(chǔ).
[Abstract]:Based on waveguide theory and equivalent refractive index method, asymmetric waveguide isolated double-channel ridge edge-emitting lasers are designed and fabricated. Finally, a low min single base side mode 852 nm laser is obtained. The influence of the aspect ratio parameter design of different ridges on the lateral mode characteristics of the laser is studied in detail, and the stable output of the single base side mode of the ridged waveguide side emitting laser is realized without coating on the cavity surface. At the same time, the lasing wavelength can be accurately tuned to 852 nm;. The working current is up to 150 mA, the working temperature is 30 鈩,

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