發(fā)布時間：2018-11-11 18:46

【摘要】：高功率脈沖磁控濺射(Hi PIMS)技術被提出以來就受到廣泛關注,其較高的濺射材料離化率結合適當?shù)碾姶趴刂?可產(chǎn)生高致密度、高結合力和高綜合性能的涂層,但其沉積速率低、放電不穩(wěn)定、濺射材料離化率差異較大.我們設計了一種筒形濺射源,通過對結構的設計優(yōu)化,利用類空心陰極放電效應,使問題得到解決.然而其靶面切向磁場不均勻,電子逃逸嚴重,進而造成等離子體密度偏低,且放電不均勻.本文通過對其放電和等離子體分布進行仿真,提出電場阻擋和磁鐵補償兩種方案,研究了不同電場控制條件下的放電行為和等離子體分布.結果表明:增加電子阻擋屏極可以生成勢阱,從而有效抑制電子從邊緣的逸出;優(yōu)化后的磁鐵補償可以顯著提高靶面橫向磁場的均勻性及靶面利用率.兩種方案同時作用時,Hi PIMS放電刻蝕環(huán)面積更大、且更加均勻.
[Abstract]:High power pulsed magnetron sputtering (Hi PIMS) technology has been widely concerned since it was proposed. Its high ionization rate of sputtering materials combined with appropriate electromagnetic control can produce high density, high adhesion and high performance coatings. However, the deposition rate is low, the discharge is unstable, and the ionization rate of sputtering materials varies greatly. We have designed a cylindrical sputtering source and solved the problem by optimizing the structure and utilizing the discharge effect of hollow cathode. However, the tangential magnetic field on the target surface is not uniform, and the electron escape is serious, which leads to the low plasma density and uneven discharge. Based on the simulation of the discharge and plasma distribution, two schemes of electric field barrier and magnet compensation are proposed in this paper. The discharge behavior and plasma distribution under different electric field control conditions are studied. The results show that the potential well can be generated by increasing the electron barrier electrode, which can effectively restrain the electron escaping from the edge, and the optimized magnet compensation can significantly improve the uniformity of the transverse magnetic field and the utilization ratio of the target surface. When the two schemes act simultaneously, the area of the, Hi PIMS discharge etching ring is larger and more uniform.
【作者單位】： 北京大學深圳研究生院新材料學院;香港城市大學物理與材料科學系;
【基金】：國家材料基因組計劃(批準號:2016YFB0700600) 國家自然科學基金(批準號:51301004) 深圳科技研究基金(批準號:JCYJ20140903102215536,JCYJ20150828093127698) 香港城市大學應用研究基金(批準號:9667122)資助的課題~~
【分類號】：O461

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