本文選題：石墨烯　切入點：低壓熱絲化學氣相沉積　出處：《西北大學學報(自然科學版)》2017年02期 　論文類型：期刊論文

【摘要】：利用鎳襯底獨特的滲碳-析碳機制,分別引入混合氣體氫氣和乙炔,使用低壓熱絲化學氣相沉積法(LPHFCVD),在鎳襯底上生長石墨烯(Graphene)薄膜。通氣時長分別為5s,60s,300s,極大地節(jié)省了時間和成本。制備的樣品分別通過拉曼光譜(Raman),X光電子能譜(XPS),掃描電鏡(SEM)等分析表征手段對其結(jié)構(gòu)、形貌、缺陷等進行表征。拉曼光譜表明石墨烯薄膜的D,G,2D峰在不同溫度、不同反應時間條件下不同的層數(shù)、缺陷密度和結(jié)晶質(zhì)量,其中以950℃,5s的條件制備得到的石墨烯薄膜為1-2層,且缺陷極少,結(jié)晶質(zhì)量很高。XPS的結(jié)果進一步確認了按照以上條件制備的石墨烯薄膜具有很高的結(jié)晶質(zhì)量和很低的缺陷密度。SEM則顯示了在鎳襯底上制備石墨烯薄膜的形貌。
[Abstract]:Based on the unique Carburizing and carbon evolution mechanism of nickel substrate, the mixed gases of hydrogen and acetylene were introduced, respectively. Graphene Graphene thin films were grown on nickel substrates by low pressure hot filament chemical vapor deposition (LPHFCVDX). The aeration time was 5 sg 60 sg 300s, which greatly saved the time and cost. The samples were scanned by Raman spectra and X-ray photoelectron spectroscopy (XPS). Electron microscope (SEM) and other means of analysis and characterization of its structure, Raman spectra showed that the DG ~ (2 +) peak of graphene thin films had different layers, defect density and crystallization quality at different temperatures and different reaction times. The graphene film prepared at 950 鈩，

本文編號：1591374