發(fā)布時(shí)間：2018-01-10 11:26

  本文關(guān)鍵詞：退火工藝對(duì)含硅量子點(diǎn)SiC_x薄膜光譜特性的影響　出處：《光學(xué)學(xué)報(bào)》2017年01期 　論文類型：期刊論文

  更多相關(guān)文章： 薄膜 硅量子點(diǎn) 富硅SiCx薄膜 微波退火 結(jié)晶 光致發(fā)光

【摘要】：采用磁控共濺射法并結(jié)合微波退火和快速光熱退火工藝,在不同退火溫度下制備了含硅量子點(diǎn)的富硅SiC_x薄膜。采用掠入射X射線衍射(GIXRD)、拉曼光譜和光致發(fā)光(PL)光譜技術(shù)對(duì)薄膜進(jìn)行了表征,研究了退火工藝對(duì)薄膜中硅量子點(diǎn)數(shù)量、尺寸、晶化率以及發(fā)光峰的影響。結(jié)果表明:與快速光熱退火相比,微波退火不但能降低硅量子點(diǎn)的形成溫度(降低200℃),而且還能降低β-SiC量子點(diǎn)的形成溫度(降低100℃);在相同退火溫度下,微波退火制備的硅量子點(diǎn)的數(shù)量更多、晶化率更高、光致發(fā)光峰更強(qiáng);采用1000℃溫度的微波退火樣品的硅量子點(diǎn)數(shù)量最多、尺寸最大(5.26nm)、晶化率最高(74.25%)、發(fā)光峰最強(qiáng),說(shuō)明微波退火能凝析出高質(zhì)量的硅量子點(diǎn)。
[Abstract]:Si-rich SiC_x thin films containing silicon quantum dots were prepared by magnetron co-sputtering and microwave annealing and rapid photothermal annealing at different annealing temperatures, and grazing incident X-ray diffraction (GIXRD) was used. Raman spectra and photoluminescence (PL) spectra were used to characterize the films. The effects of annealing process on the number and size of silicon quantum dots in the films were studied. The results show that microwave annealing can not only reduce the formation temperature of silicon quantum dots (200 鈩，

本文編號(hào)：1405103