一種非矩形截面對淺刻蝕SOI脊形波導(dǎo)側(cè)向泄漏損耗的影響
發(fā)布時間:2018-01-10 08:04
本文關(guān)鍵詞:一種非矩形截面對淺刻蝕SOI脊形波導(dǎo)側(cè)向泄漏損耗的影響 出處:《光子學(xué)報》2017年07期 論文類型:期刊論文
更多相關(guān)文章: 導(dǎo)波光學(xué) 淺刻蝕脊形波導(dǎo) 絕緣體上晶體硅 泄漏波 光損耗
【摘要】:為了進(jìn)一步探索用絕緣體上晶體硅制作的淺刻蝕脊形波導(dǎo)側(cè)向泄漏損耗的規(guī)律,提出并研究了一種非矩形截面淺刻蝕絕緣體上晶體硅脊形波導(dǎo).用光的干涉理論建立該波導(dǎo)的周期性損耗模型并推導(dǎo)出損耗周期公式,然后通過完美匹配層邊界條件下的頻域有限元法仿真觀察該特殊波導(dǎo)類TM0模的側(cè)向泄漏損耗周期的變化與最大損耗點(diǎn)的偏移現(xiàn)象.周期大小的仿真結(jié)果與理論計算符合度較高,其平均相對誤差僅0.56%.此外,發(fā)現(xiàn)該類波導(dǎo)在某些溝槽寬度下可以通過改變截面來實現(xiàn)對類TM0模損耗從最大到最小的調(diào)節(jié),而在另外一些溝槽寬度下,類TM0模損耗對截面變化不敏感.研究結(jié)果可以簡化波導(dǎo)加工并提高制作容差,為該類型波導(dǎo)的設(shè)計與制作提供參考.
[Abstract]:In order to further explore the rule of lateral leakage loss of shallow etched ridge waveguide made of silicon crystal on insulator. A silicon ridge waveguide with non-rectangular cross-section is proposed and studied. The periodic loss model of the waveguide is established by using the interference theory of light and the periodic loss formula is derived. Then the frequency domain finite element method under perfectly matched layer boundary condition is used to simulate and observe the variation of the lateral leakage loss period and the maximum loss point migration of the special waveguide TM0 mode. The degree of calculation coincidence is high. The average relative error is only 0.56.Furthermore, it is found that this kind of waveguide can adjust the TM0 mode loss from maximum to minimum by changing the cross section of some grooves. In some other grooves, the TM0 mode loss is insensitive to cross-section changes. The results can simplify the fabrication of waveguides and increase the fabrication tolerances, and provide a reference for the design and fabrication of this type of waveguides.
【作者單位】: 浙江工業(yè)大學(xué)理學(xué)院;
【基金】:浙江省自然科學(xué)基金(No.LY16F050008)資助~~
【分類號】:TN252
【正文快照】: 0引言貝爾實驗室在加載條狀波導(dǎo)的基礎(chǔ)上提出了脊形波導(dǎo)的概念[1],這種脊形波導(dǎo)被廣泛用于定向耦合器、1-3003270調(diào)制器及偏振器中.損耗是決定波導(dǎo)性能重要的參量之一,而側(cè)向泄漏是脊形波導(dǎo)損耗的主要原因.PENGS等最先在理論上預(yù)測了脊形波導(dǎo)損耗周期性變化的諧振效應(yīng)[2],隨后
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