本文選題：氣體漩渦　切入點(diǎn)：懸浮　出處：《浙江大學(xué)》2012年碩士論文　論文類型：學(xué)位論文

【摘要】：隨著集成電子技術(shù)的不斷發(fā)展,硅片直徑不斷增大,硅片厚度不斷變薄,硅片表面的平整度、精度要求不斷升高。隨著450mm直徑硅片的時(shí)代即將來臨,其精度要求為納米級,傳統(tǒng)的硅片夾持方式容易損傷硅片,使硅片表面造成劃痕等,逐漸不能滿足新的要求。本文根據(jù)漩渦中心產(chǎn)生負(fù)壓的原理,研究并設(shè)計(jì)漩渦吸盤,使硅片懸浮于空中,避免硅片表面受到損傷。相對其它夾持方式,這種夾持方式使硅片表面應(yīng)力分布均勻,可最大限度地避免硅片表面受到傷害。由于漩渦的不穩(wěn)定性,單個(gè)漩渦吸盤無法實(shí)現(xiàn)正常的夾持功能,通過集成吸盤的引入,實(shí)現(xiàn)了硅片的穩(wěn)定夾持,并且這種集成吸盤非常適合大直徑硅片的夾持,通過PLC編程實(shí)現(xiàn)了硅片的自動(dòng)化夾持輸送。主要工作如下： 1、利用流體力學(xué)中的理論,對理想漩渦和吸盤產(chǎn)生的實(shí)際漩渦進(jìn)行詳細(xì)的理論分析,分析出各種可能影響硅片夾持功能的參數(shù),結(jié)構(gòu)參數(shù)包括吸盤氣腔半徑、氣腔高度、進(jìn)氣小孔的形狀大小及其離氣腔上表面的位置等,外部參數(shù)包括進(jìn)氣氣壓和流量等,預(yù)測他們對硅片可能產(chǎn)生的影響。 2、利用壓力傳感器測量出硅片表面的壓力分布,利用電子稱重傳感器測量夾持力,對漩渦吸盤工作時(shí)各種參數(shù)對夾持力的影響進(jìn)行分析,如夾持力隨氣腔半徑、氣腔高度、進(jìn)口氣壓等的變化趨勢等,選用最好的一組實(shí)驗(yàn)參數(shù),測量硅片表面的壓力分布情況。 3、通過理論和實(shí)驗(yàn)分析,單漩渦吸盤不能消除扭矩,只能削弱其影響,為此設(shè)計(jì)了一些特殊結(jié)構(gòu)的漩渦吸盤。 4、在單漩渦吸盤大量的實(shí)驗(yàn)研究基礎(chǔ)上,對單吸盤進(jìn)行集成組合,消除了硅片扭轉(zhuǎn)、翻轉(zhuǎn)、震蕩現(xiàn)象,但平移現(xiàn)象依然存在,因此設(shè)計(jì)了采用氣動(dòng)方式控制的自動(dòng)擋桿機(jī)構(gòu),消除了平移現(xiàn)象,最終實(shí)現(xiàn)了穩(wěn)定夾持。 5、采用氣動(dòng)傳輸方式,通過PLC編程實(shí)現(xiàn)硅片的自動(dòng)化夾持輸送。
[Abstract]:With the development of integrated electronic technology, the diameter of silicon wafer is increasing, the thickness of silicon wafer is thinning, the flatness and precision of silicon wafer surface are increasing, and with the coming of the era of 450mm diameter silicon wafer, the precision requirement is nanometer level. The traditional method of wafer clamping is easy to damage the wafer and make the surface of the wafer scratch, which can not meet the new requirements gradually. According to the principle of negative pressure in the center of the vortex, this paper studies and designs the whirlpool sucker, which makes the wafer suspended in the air. Avoid damage to the surface of silicon wafer. Compared with other clamping methods, this kind of clamping method makes the stress distribution on the surface of silicon wafer uniform, and can avoid the damage to the surface of wafer to the maximum extent. Because of the instability of swirl, The single whirlpool sucker can not realize the normal gripping function. By the introduction of the integrated sucker, the stable clamping of the silicon wafer is realized, and this kind of integrated sucker is very suitable for the gripping of the large diameter silicon wafer. The automatic gripping and conveying of silicon wafer is realized by PLC programming. The main work is as follows:. 1. By using the theory of hydrodynamics, the theoretical analysis of the actual vortex produced by ideal vortex and sucker is carried out, and the parameters that may affect the gripping function of silicon wafer are analyzed. The structural parameters include the air cavity radius of the sucker and the height of the gas chamber. The shape and size of the inlet orifice and its location from the upper surface of the gas chamber, and the external parameters, such as inlet air pressure and flow rate, etc., are predicted to predict their possible influence on the silicon wafer. 2. The pressure distribution on the silicon wafer surface is measured by pressure sensor, and the clamping force is measured by the electronic weighing sensor. The influence of various parameters on the clamping force when the vortex sucker is working is analyzed, such as the clamping force depends on the radius of the gas chamber and the height of the gas chamber. The pressure distribution on the surface of silicon wafer was measured by selecting the best experimental parameters. 3. Through theoretical and experimental analysis, the single vortex sucker can not eliminate the torque, but only weaken its influence. For this reason, some special structure whirlpool suckers are designed. 4. On the basis of a lot of experimental research on single vortex sucker, the integrated combination of single sucker is carried out to eliminate the phenomenon of silicon wafer torsion, flip and oscillation, but the phenomenon of translation still exists, so an automatic stopper mechanism controlled by pneumatic method is designed. The translation phenomenon is eliminated and the stable clamping is realized. 5. Pneumatic transmission mode is adopted to realize the automatic gripping and conveying of silicon wafer by PLC programming.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2012
【分類號】：TN405;TH22

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本文編號：1567867